Solid-state imaging device and electronic apparatus

    公开(公告)号:US10469780B2

    公开(公告)日:2019-11-05

    申请号:US15771170

    申请日:2016-10-25

    摘要: Imaging devices and electronic apparatuses incorporating imaging devices are provided. An imaging device as disclosed can include a first pixel (2PA, 2PB) and a second pixel (2X). The first and second pixels each have a first electrode (51A, 51B, 51C), a portion of a photoelectric conversion film (81), and a portion of a second electrode (82), where the photoelectric conversion film is between the first electrode and the second electrode. The first electrode (51A, 51B) of the first pixel has a first area, while the first electrode (51C) of the second pixel has a second area that is smaller than the first area. The first pixel can include a light shielding film (52A, 52B). Alternatively or in addition, the first pixel can be divided into first and second portions.

    Solid-state imaging device, and electronic apparatus

    公开(公告)号:US11310452B2

    公开(公告)日:2022-04-19

    申请号:US16491377

    申请日:2018-03-28

    摘要: The present technology relates to a solid-state imaging device and an electronic apparatus which make it possible to improve pixel property. Provided is a solid-state imaging device, including a first electrode formed on a semiconductor layer, a photoelectric conversion layer formed on the first electrode, a second electrode formed on the photoelectric conversion layer, and a third electrode disposed between the first electrode and an adjacent first electrode, and electrically insulated. A voltage of the third electrode is controlled to a voltage corresponding to a detection result which contributes to control of discharge of charges or assist for transfer of charges. The present technology can be applied to, for example, a CMOS image sensor.

    Solid-state imaging device, and electronic apparatus

    公开(公告)号:US11765483B2

    公开(公告)日:2023-09-19

    申请号:US17656584

    申请日:2022-03-25

    IPC分类号: H04N25/76 H01L27/146

    CPC分类号: H04N25/76 H01L27/14643

    摘要: Provided is a solid-state imaging device, including a first electrode formed on a semiconductor layer, a photoelectric conversion layer formed on the first electrode, a second electrode formed on the photoelectric conversion layer, and a third electrode disposed between the first electrode and an adjacent first electrode, and electrically insulated. A voltage of the third electrode is controlled to a voltage corresponding to a detection result which can contribute to control of discharge of charges or assist for transfer of charges. The detection results corresponds to one of light or temperature and the voltage of third electrode is controlled according to an output of a frame image obtained before exposure.