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    Solid-state imaging element and electronic device
    1.
    发明授权
    Solid-state imaging element and electronic device 有权

    公开(公告)号：US10855941B2

    公开(公告)日：2020-12-01

    申请号：US16349035

    申请日：2017-11-14

    申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

    发明人： Nobuhiro Kawai

    IPC分类号： H04N5/363 ,  H04N5/369 ,  H01L27/28 ,  H01L27/30 ,  H04N5/361 ,  H04N5/3745 ,  H01L27/146 ,  H04N5/374

    摘要： A solid-state imaging element of the present disclosure includes a pixel. The pixel includes a charge accumulation unit that accumulates a charge photoelectrically converted by a photoelectric conversion unit, a reset transistor that selectively applies a reset voltage to the charge accumulation unit, an amplification transistor having a gate electrode electrically connected to the charge accumulation unit, and a selection transistor connected in series to the amplification transistor. Additionally, the solid-state imaging element includes a first wiring electrically connecting the charge accumulation unit and the gate electrode of the amplification transistor, a second wiring electrically connected to a common connection node of the amplification transistor and the selection transistor and formed along the first wiring, and a third wiring electrically connecting the amplification transistor and the selection transistor.

    IMAGING DEVICE AND RANGING SYSTEM
    3.
    发明公开
    IMAGING DEVICE AND RANGING SYSTEM 审中-公开

    公开(公告)号：US20240145496A1

    公开(公告)日：2024-05-02

    申请号：US18546684

    申请日：2022-02-22

    申请人： Sony Corporation ,  Sony Semiconductor Solutions Corporation

    发明人： Hideaki Togashi ,  Kaori Takimoto ,  Masahiro Segami ,  Kei Nakagawa ,  Nobuhiro Kawai

    IPC分类号： H01L27/146 ,  H04N25/705 ,  H04N25/77

    CPC分类号： H01L27/14605 ,  H01L27/14669 ,  H04N25/705 ,  H04N25/77

    摘要： Imaging devices and ranging devices are disclosed. In one example, an imaging device includes a semiconductor substrate, a first pixel array, a second pixel array, and a control unit. In the first pixel array, a first light receiving pixel on the semiconductor substrate has a stacked structure of a first electrode, a photoelectric conversion layer, and a second electrode (80). It photoelectrically converts light in a first wavelength region including the visible light region. In the second pixel array, a second light receiving pixel is provided at a position overlapping the first light receiving pixel in a thickness direction of the semiconductor substrate. It photoelectrically converts light in a second wavelength region including the infrared light region. The control unit drives and controls the second pixel array based on a signal photoelectrically converted by the first pixel array.

    Photoelectric converter and solid-state imaging device
    5.
    发明授权
    Photoelectric converter and solid-state imaging device 有权

    公开(公告)号：US12046610B2

    公开(公告)日：2024-07-23

    申请号：US17946636

    申请日：2022-09-16

    申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

    发明人： Nobuhiro Kawai ,  Hirokazu Shibuta

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14621 ,  H01L27/14612 ,  H01L27/14627

    摘要： A photoelectric converter according to an embodiment of the present disclosure includes: an organic photoelectric conversion section; an inorganic photoelectric conversion section; and an optical filter. The organic photoelectric conversion section includes a first electrode, a second electrode, and an organic photoelectric conversion layer. The first electrode includes one electrode and another electrode. The second electrode is disposed to be opposed to the first electrode. The organic photoelectric conversion layer is disposed between the first electrode and the second electrode and is electrically coupled to the one electrode. The organic photoelectric conversion layer and the other electrode are provided with an insulation layer therebetween. The inorganic photoelectric conversion section has the first electrode disposed between the inorganic photoelectric conversion section and the organic photoelectric conversion section. The optical filter is provided between the organic photoelectric conversion section and the inorganic photoelectric conversion section.

    Photoelectric converter and solid-state imaging device
    7.
    发明授权
    Photoelectric converter and solid-state imaging device 有权

    公开(公告)号：US11469262B2

    公开(公告)日：2022-10-11

    申请号：US16772258

    申请日：2018-12-10

    申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

    发明人： Nobuhiro Kawai ,  Hirokazu Shibuta

    IPC分类号： H01L27/146

    摘要： A photoelectric converter According to an embodiment of the present disclosure includes: an organic photoelectric conversion section; an inorganic photoelectric conversion section; and an optical filter. The organic photoelectric conversion section includes a first electrode, a second electrode, and an organic photoelectric conversion layer. The first electrode includes one electrode and another electrode. The second electrode is disposed to be opposed to the first electrode. The organic photoelectric conversion layer is disposed between the first electrode and the second electrode and is electrically coupled to the one electrode. The organic photoelectric conversion layer and the other electrode are provided with an insulation layer therebetween. The inorganic photoelectric conversion section has the first electrode disposed between the inorganic photoelectric conversion section and the organic photoelectric conversion section. The optical filter is provided between the organic photoelectric conversion section and the inorganic photoelectric conversion section.

    Solid-state imaging device and electronic apparatus
    8.
    发明授权
    Solid-state imaging device and electronic apparatus 有权

    公开(公告)号：US12125858B2

    公开(公告)日：2024-10-22

    申请号：US17755950

    申请日：2020-11-02

    申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

    发明人： Yukio Kaneda ,  Hideaki Togashi ,  Fumihiko Koga ,  Masahiro Joei ,  Kenichi Murata ,  Shintarou Hirata ,  Nobuhiro Kawai

    IPC分类号： H01L27/146 ,  H04N25/77

    CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14636 ,  H04N25/77

    摘要： A solid-state imaging device capable of achieving higher image quality is provided.
    Provided is a solid-state imaging device including a semiconductor substrate, a first photoelectric conversion unit that is provided above the semiconductor substrate and that converts light into charge, and a second photoelectric conversion unit that is provided above the first photoelectric conversion unit and that converts light into charge. Each of the first photoelectric conversion unit and the second photoelectric conversion unit includes at least a first electrode, a second electrode, and a photoelectric conversion film disposed between the first electrode and the second electrode. The first electrode of the second photoelectric conversion unit and a charge accumulation unit formed in the semiconductor substrate are electrically connected to each other via a conductive portion penetrating at least the first photoelectric conversion unit. An insulation film portion is disposed at least on a part of an outer circumference of the conductive portion. The insulation film portion includes at least one layer of an insulation film. The at least one layer of the insulation film has fixed charge of a type identical to a type of charge accumulated in the charge accumulation unit.

    Imaging element, laminated imaging element, and solid-state imaging device
    10.
    发明授权
    Imaging element, laminated imaging element, and solid-state imaging device 有权

    公开(公告)号：US11621290B2

    公开(公告)日：2023-04-04

    申请号：US16643331

    申请日：2018-06-08

    申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

    发明人： Nobuhiro Kawai ,  Hideaki Togashi ,  Fumihiko Koga ,  Tetsuji Yamaguchi ,  Shintarou Hirata ,  Taiichiro Watanabe ,  Yoshihiro Ando

    IPC分类号： H01L27/146

    摘要： A solid-state imaging element includes a pixel including a first imaging element, a second imaging element, a third imaging element, and an on-chip micro lens 90. The first imaging element includes a first electrode 11, a third electrode 12, and a second electrode 16. The pixel further includes a third electrode control line VOA connected to the third electrode 12 and a plurality of control lines 62B connected to various transistors included in the second and third imaging elements and different from the third electrode control line VOA. In the pixel, a distance between the center of the on-chip micro lens 90 included in the pixel and any one of the plurality of control lines 62B included in the pixel is shorter than a distance between the center of the on-chip micro lens 90 included in the pixel and the third electrode control line VOA included in the pixel.