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公开(公告)号：US11910624B2
公开(公告)日：2024-02-20
申请号：US18081889
申请日：2022-12-15
发明人： Shintarou Hirata , Hideaki Togashi , Yukio Kaneda
CPC分类号： H10K30/353 , H10K39/32
摘要： A solid-state imaging element including: a photoelectric conversion layer, a first electrode and a second electrode opposed to each other with the photoelectric conversion layer interposed therebetween, a semiconductor layer provided between the first electrode and the photoelectric conversion layer, an accumulation electrode opposed to the photoelectric conversion layer with the semiconductor layer interposed therebetween, an insulating film provided between the accumulation electrode and the semiconductor layer, and a barrier layer provided between the semiconductor layer and the photoelectric conversion layer.
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公开(公告)号：US11552268B2
公开(公告)日：2023-01-10
申请号：US16979992
申请日：2019-03-04
发明人： Shintarou Hirata , Hideaki Togashi , Yukio Kaneda
摘要： A solid-state imaging element including: a photoelectric conversion layer, a first electrode and a second electrode opposed to each other with the photoelectric conversion layer interposed therebetween, a semiconductor layer provided between the first electrode and the photoelectric conversion layer, an accumulation electrode opposed to the photoelectric conversion layer with the semiconductor layer interposed therebetween, an insulating film provided between the accumulation electrode and the semiconductor layer, and a barrier layer provided between the semiconductor layer and the photoelectric conversion layer.
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公开(公告)号：US12114516B2
公开(公告)日：2024-10-08
申请号：US17648543
申请日：2022-01-20
发明人： Yukio Kaneda
IPC分类号： H10K30/30 , H01L27/146 , H10K30/82 , H10K39/32
CPC分类号： H10K30/353 , H01L27/146 , H01L27/1461 , H01L27/14643 , H01L27/14645 , H01L27/14667 , H10K30/82 , H10K39/32 , H01L27/14665 , Y02E10/549 , Y02P70/50
摘要： The present technology relates to, in a photoelectric conversion element using a photoelectric conversion film, the photoelectric conversion element and a method of manufacturing the same, a solid state image sensor, an electronic device, and a solar cell, for enabling improvement of quantum efficiency. The photoelectric conversion element includes two electrodes constituting an anode and a cathode, and a photoelectric conversion layer arranged between the two electrodes, and at least one electrode side of the two electrodes is doped with an impurity at impurity density of 1e16/cm3 or more in the photoelectric conversion layer. The present technology can be applied to, for example, a solid state image sensor, an electronic device, a solar cell and the like.
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公开(公告)号：US11825666B2
公开(公告)日：2023-11-21
申请号：US17262264
申请日：2019-07-30
IPC分类号： H01L27/146 , H10K39/32 , H10K19/20 , H10K30/30 , H10K30/82
CPC分类号： H10K39/32 , H10K19/20 , H10K30/30 , H10K30/82 , H01L27/14647
摘要： An imaging element according to an embodiment of the present disclosure includes: a first electrode including a plurality of electrodes; a second electrode opposed to the first electrode; a photoelectric conversion layer including an organic material provided between the first electrode and the second electrode; a first semiconductor layer provided between the first electrode and the photoelectric conversion layer, and including an n-type semiconductor material; and a second semiconductor layer provided between the second electrode and the photoelectric conversion layer, and including at least one of a carbon-containing compound having an electron affinity larger than a work function of the first electrode or an inorganic compound having a work function larger than the work function of the first electrode.
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公开(公告)号：US11101303B2
公开(公告)日：2021-08-24
申请号：US16639406
申请日：2018-05-11
发明人： Hideki Ono , Yukio Kaneda
IPC分类号： H01L27/146
摘要： An imaging element (photoelectric conversion element) includes a photoelectric conversion unit formed by laminating a first electrode 21, a photoelectric conversion layer 23A, and a second electrode 22. Between the first electrode 21 and the photoelectric conversion layer 23A, a composite oxide layer 23B containing indium-gallium-zinc composite oxide is formed. The composite oxide layer 23B includes a first layer 23B1 adjacent to the first electrode 21 and a second layer 23B2 adjacent to the photoelectric conversion layer 23A. The first layer 23B1 has a higher indium composition than the second layer 23B2, or the first layer 23B1 has a higher gallium composition than the second layer 23B2, or the first layer 23B1 has a higher zinc composition than the second layer 23B2.
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公开(公告)号：US11264580B2
公开(公告)日：2022-03-01
申请号：US15773675
申请日：2016-11-10
发明人： Yukio Kaneda
IPC分类号： H01L51/42 , H01L27/146 , H01L27/30 , H01L51/44
摘要： The present technology relates to, in a photoelectric conversion element using a photoelectric conversion film, the photoelectric conversion element and a method of manufacturing the same, a solid state image sensor, an electronic device, and a solar cell, for enabling improvement of quantum efficiency. The photoelectric conversion element includes two electrodes constituting an anode and a cathode, and a photoelectric conversion layer arranged between the two electrodes, and at least one electrode side of the two electrodes is doped with an impurity at impurity density of 1e16/cm3 or more in the photoelectric conversion layer. The present technology can be applied to, for example, a solid state image sensor, an electronic device, a solar cell and the like.
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公开(公告)号：US11183530B2
公开(公告)日：2021-11-23
申请号：US16516871
申请日：2019-07-19
发明人： Yukio Kaneda
IPC分类号： H01L27/146 , H04N5/369 , H04N9/04 , H01L27/30
摘要： A more preferable pixel for detecting a focal point may be formed by using a photoelectric converting film. A solid-state image sensor includes a first pixel including a photoelectric converting unit formed of a photoelectric converting film and first and second electrodes which interpose the same from above and below in which at least one of the first and second electrodes is a separated electrode separated for each pixel, and a second pixel including the photoelectric converting unit in which the separated electrode is formed to have a planar size smaller than that of the first pixel and a third electrode extending at least to a boundary of the pixel is formed in a region which is vacant due to a smaller planar size. The present disclosure is applicable to the solid-state image sensor and the like, for example.
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公开(公告)号：US12125858B2
公开(公告)日：2024-10-22
申请号：US17755950
申请日：2020-11-02
发明人： Yukio Kaneda , Hideaki Togashi , Fumihiko Koga , Masahiro Joei , Kenichi Murata , Shintarou Hirata , Nobuhiro Kawai
IPC分类号： H01L27/146 , H04N25/77
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14623 , H01L27/14636 , H04N25/77
摘要： A solid-state imaging device capable of achieving higher image quality is provided.
Provided is a solid-state imaging device including a semiconductor substrate, a first photoelectric conversion unit that is provided above the semiconductor substrate and that converts light into charge, and a second photoelectric conversion unit that is provided above the first photoelectric conversion unit and that converts light into charge. Each of the first photoelectric conversion unit and the second photoelectric conversion unit includes at least a first electrode, a second electrode, and a photoelectric conversion film disposed between the first electrode and the second electrode. The first electrode of the second photoelectric conversion unit and a charge accumulation unit formed in the semiconductor substrate are electrically connected to each other via a conductive portion penetrating at least the first photoelectric conversion unit. An insulation film portion is disposed at least on a part of an outer circumference of the conductive portion. The insulation film portion includes at least one layer of an insulation film. The at least one layer of the insulation film has fixed charge of a type identical to a type of charge accumulated in the charge accumulation unit.-
公开(公告)号：US11793009B2
公开(公告)日：2023-10-17
申请号：US17979904
申请日：2022-11-03
发明人： Yukio Kaneda , Fumihiko Koga
CPC分类号： H10K39/32 , H04N23/84 , H04N25/00 , H04N25/79 , H10K30/81 , H01L27/14647 , H10K19/201
摘要： An imaging device includes a first electrode, a charge accumulating electrode arranged with a space from the first electrode, an isolation electrode arranged with a space from the first electrode and the charge accumulating electrode and surrounding the charge accumulating electrode, a photoelectric conversion layer formed in contact with the first electrode and above the charge accumulating electrode with an insulating layer interposed therebetween, and a second electrode formed on the photoelectric conversion layer. The isolation electrode includes a first isolation electrode and a second isolation electrode arranged with a space from the first isolation electrode, and the first isolation electrode is positioned between the first electrode and the second isolation electrode.
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公开(公告)号：US11532672B2
公开(公告)日：2022-12-20
申请号：US17252774
申请日：2019-06-07
发明人： Yukio Kaneda , Fumihiko Koga
摘要： An imaging device includes a first electrode, a charge accumulating electrode arranged with a space from the first electrode, an isolation electrode arranged with a space from the first electrode and the charge accumulating electrode and surrounding the charge accumulating electrode, a photoelectric conversion layer formed in contact with the first electrode and above the charge accumulating electrode with an insulating layer interposed therebetween, and a second electrode formed on the photoelectric conversion layer. The isolation electrode includes a first isolation electrode and a second isolation electrode arranged with a space from the first isolation electrode, and the first isolation electrode is positioned between the first electrode and the second isolation electrode.
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