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公开(公告)号：US12028612B2
公开(公告)日：2024-07-02
申请号：US17638318
申请日：2020-09-03
发明人： Yusuke Murakawa , Hideaki Togashi , Yoshito Nagashima , Akira Furukawa , Yoshihiro Ando , Yasumasa Akutagawa , Taku Minoda , Hiroki Iwashita , Takahito Niwa , Sho Nishida , Mikio Ishimaru
IPC分类号： H04N23/67 , H01L27/146 , H04N25/704
CPC分类号： H04N23/672 , H01L27/14607 , H01L27/14609 , H01L27/14614 , H01L27/14627 , H01L27/1463 , H04N25/704
摘要： An error is reduced in phase difference detection of an imaging element including a phase difference pixel with an on-chip lens in common for a pair of pixels. The imaging element includes a pixel, an individual on-chip lens, a plurality of phase difference pixels, a common on-chip lens, and a pixel circuit. The individual on-chip lens individually collects incident light for each pixel. The phase difference pixels are arranged adjacent to each other to detect a phase difference. The common on-chip lens is arranged in common for the plurality of phase difference pixels and collects incident light in common. The pixel circuit is formed in a semiconductor substrate and generates an image signal on the basis of a transferred charge. Charge transfer units of the plurality of phase difference pixels are in a region between the common on-chip lens and the individual on-chip lens.
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公开(公告)号：US11743614B2
公开(公告)日：2023-08-29
申请号：US17930589
申请日：2022-09-08
IPC分类号： H04N5/225 , H04N25/704 , H04N25/77 , H10K19/20 , H10K39/32 , H01L27/146
CPC分类号： H04N25/704 , H04N25/77 , H10K19/20 , H10K39/32 , H01L27/14647
摘要： There is provided a solid-state imaging device that includes a substrate having a pixel array unit sectioned into a matrix, a plurality of normal pixels, a plurality of phase difference detection pixels, and a plurality of adjacent pixels adjacent to the phase difference detection pixels, each provided in each of the plurality of sections, in which each of the normal pixel, the phase difference detection pixel, and the adjacent pixel has a photoelectric conversion film, and an upper electrode and a lower electrode that sandwich the photoelectric conversion film in a thickness direction of the photoelectric conversion film, and the lower electrode, in the adjacent pixel, extends from the section in which the adjacent pixel is provided to cover the section in which the phase difference detection pixel adjacent to the adjacent pixel is provided, when viewed from above the substrate.
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公开(公告)号：US11240450B2
公开(公告)日：2022-02-01
申请号：US16638861
申请日：2018-05-21
发明人： Yoshihiro Ando , Hideaki Togashi , Shinpei Fukuoka
IPC分类号： H04N5/369 , H04N5/232 , H01L27/146 , H04N9/04
摘要： Provided is a solid-state imaging element including a plurality of pixels that includes at least two phase difference detection pixels for focus detection. Each pixel has a stacked structure including a plurality of photoelectric conversion elements that are stacked on top of each other and absorb light beams different in wavelength from one another to generate electrical charges, and each phase difference detection pixel includes, in the stacked structure, a color filter that partially covers an upper face of one of the photoelectric conversion elements and absorbs a light beam with a specific wavelength.
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公开(公告)号：US11509846B2
公开(公告)日：2022-11-22
申请号：US16638879
申请日：2018-05-22
IPC分类号： H04N5/232 , H04N5/369 , H01L27/28 , H01L27/30 , H04N5/3745 , H01L27/146
摘要： There is provided a solid-state imaging device including a substrate having a pixel array unit sectioned into a matrix, a plurality of normal pixels, a plurality of phase difference detection pixels, and a plurality of adjacent pixels adjacent to the phase difference detection pixels, each provided in each of the plurality of sections, in which each of the normal pixel, the phase difference detection pixel, and the adjacent pixel has a photoelectric conversion film, and an upper electrode and a lower electrode that sandwich the photoelectric conversion film in a thickness direction of the photoelectric conversion film, and the lower electrode, in the adjacent pixel, extends from the section in which the adjacent pixel is provided to cover the section in which the phase difference detection pixel adjacent to the adjacent pixel is provided, when viewed from above the substrate.
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公开(公告)号：US12126923B2
公开(公告)日：2024-10-22
申请号：US18342791
申请日：2023-06-28
IPC分类号： H04N5/335 , H04N25/704 , H04N25/77 , H10K19/20 , H10K39/32 , H01L27/146
CPC分类号： H04N25/704 , H04N25/77 , H10K19/20 , H10K39/32 , H01L27/14647
摘要： Provided is a solid-state imaging device including a substrate having a pixel array unit sectioned into a matrix, a plurality of normal pixels, a plurality of phase difference detection pixels, and a plurality of adjacent pixels adjacent to the phase difference detection pixels, each provided in each of the plurality of sections. Further, each of the normal pixel, the phase difference detection pixel, and the adjacent pixel has a photoelectric conversion film, and an upper electrode and a lower electrode that sandwich the photoelectric conversion film in a thickness direction of the photoelectric conversion film. Furthermore, the lower electrode, in the adjacent pixel, extends from the section in which the adjacent pixel is provided to cover the section in which the phase difference detection pixel adjacent to the adjacent pixel is provided, when viewed from above the substrate.
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公开(公告)号：US11621290B2
公开(公告)日：2023-04-04
申请号：US16643331
申请日：2018-06-08
发明人： Nobuhiro Kawai , Hideaki Togashi , Fumihiko Koga , Tetsuji Yamaguchi , Shintarou Hirata , Taiichiro Watanabe , Yoshihiro Ando
IPC分类号： H01L27/146
摘要： A solid-state imaging element includes a pixel including a first imaging element, a second imaging element, a third imaging element, and an on-chip micro lens 90. The first imaging element includes a first electrode 11, a third electrode 12, and a second electrode 16. The pixel further includes a third electrode control line VOA connected to the third electrode 12 and a plurality of control lines 62B connected to various transistors included in the second and third imaging elements and different from the third electrode control line VOA. In the pixel, a distance between the center of the on-chip micro lens 90 included in the pixel and any one of the plurality of control lines 62B included in the pixel is shorter than a distance between the center of the on-chip micro lens 90 included in the pixel and the third electrode control line VOA included in the pixel.
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