公开(公告)号：US12120897B2

公开(公告)日：2024-10-15

申请号：US17424582

申请日：2020-01-21

申请人： SONY GROUP CORPORATION ,  SONY SEMICONDUCTOR SOLUTIONS CORPORATION

发明人： Takushi Shigetoshi ,  Hideaki Togashi ,  Junpei Yamamoto ,  Shinpei Fukuoka ,  Moe Takeo ,  Sho Nishida

IPC分类号： H10K39/32

CPC分类号： H10K39/32

摘要： A solid-state imaging element according to the present disclosure includes one or more photoelectric conversion layers, a penetrating electrode, and a connection pad. The one or more photoelectric conversion layers are provided on one principal surface side serving as a light incidence plane of a semiconductor substrate. The penetrating electrode is provided in a pixel area, connected at one end to the photoelectric conversion layer to penetrate through front and back surfaces of the semiconductor substrate, and transfers an electric charge photoelectrically converted by the photoelectric conversion layer, to a different principal surface side of the semiconductor substrate. The connection pad is provided on a same layer as gates (Ga, Gr, G1, and g2) of transistors (AMP, RST, TG1, and TG2) provided on the different principal surface side of the semiconductor substrate, and to which a different end of the penetrating electrode is connected.

公开(公告)号：US12040340B2

公开(公告)日：2024-07-16

申请号：US17250348

申请日：2019-07-01

申请人： SONY CORPORATION ,  SONY SEMICONDUCTOR SOLUTIONS CORPORATION

发明人： Hideaki Togashi ,  Moe Takeo ,  Sho Nishida ,  Junpei Yamamoto ,  Shinpei Fukuoka ,  Takushi Shigetoshi

IPC分类号： H01L27/146 ,  H01L23/48

CPC分类号： H01L27/14636 ,  H01L23/481 ,  H01L27/14612 ,  H01L27/14638

摘要： Provided is an imaging element that includes a semiconductor substrate, a first photoelectric converter, a through electrode, a first dielectric film, and a second dielectric film. The semiconductor substrate has one surface and another surface that are opposed to each other. The semiconductor substrate has a through hole penetrating between the one surface and the other surface. The first photoelectric converter is provided above the one surface of the semiconductor substrate. The through electrode is electrically coupled to the first photoelectric converter and penetrates the semiconductor substrate inside the through hole. The first dielectric film is provided on the one surface of the semiconductor substrate and has a first film thickness. The second dielectric film is provided on a side surface of the through hole and has a second film thickness. The second film thickness is less than the first film thickness.

公开(公告)号：US12002832B2

公开(公告)日：2024-06-04

申请号：US17261233

申请日：2019-07-23

申请人： SONY CORPORATION ,  SONY SEMICONDUCTOR SOLUTIONS CORPORATION

发明人： Shinpei Fukuoka ,  Moe Takeo ,  Sho Nishida ,  Hideaki Togashi ,  Takushi Shigetoshi ,  Junpei Yamamoto

IPC分类号： H01L27/146

CPC分类号： H01L27/14636 ,  H01L27/14683

摘要： A solid-state image sensor is provided that includes a semiconductor substrate, a charge accumulator disposed in the semiconductor substrate and configured to accumulate charge, a photoelectric converter provided above the semiconductor substrate and configured to convert light to charge, and a through electrode passing through the semiconductor substrate and electrically connecting the charge accumulator with the photoelectric converter. At an end portion on the photoelectric converter side of the through electrode, a cross-sectional area of a conductor positioned at the center of the through electrode in a cut section orthogonal to a through direction of the through electrode gradually increases toward the photoelectric converter along the through direction.