The present invention relates to an organic-inorganic hybrid short-wave infrared photoelectric detector. A photosensitive layer of the short-wave infrared photoelectric detector comprises a lead sulfide quantum dot thin film with an energy gap≤1.24 eV, and a donor-acceptor-blended organic semiconductor structure. Compared with a photoelectric detector with pure lead sulfide quantum dots, the organic-inorganic hybrid photosensitive layer improves the external quantum efficiency of the photoelectric detector in a short-wave infrared region, reduces a dark current density, and improves a response speed, such that the specific detectivity of the photoelectric detector is improved by an order of magnitude. It is worth mentioning that the photoelectric detector can show excellent comprehensive performance under a zero-bias voltage or a relatively low reverse bias voltage. The present invention further relates to an array formed by the photoelectric detector, and a preparation method related thereto.