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公开(公告)号：US20220238604A1
公开(公告)日：2022-07-28
申请号：US17510576
申请日：2021-10-26
发明人： Keewon Kim , Byeongtaek Bae , Dail Eom , Minkyung Lee , Hajin Lim
摘要： A photoelectric conversion device includes a substrate and a wiring layer disposed on the substrate. The wiring layer includes a wiring structure and a wiring insulating layer that surrounds the wiring structure. A reflective layer is disposed on the wiring layer. The reflective layer is electrically connected to the wiring structure. A semi-permeable metal layer is spaced apart from the reflective layer in a thickness direction of the substrate. The semi-permeable metal layer faces the reflective layer to form a microcavity between the reflective layer and the semi-permeable metal layer. A stacked structure is between the reflective layer and the semi-permeable metal layer in the thickness direction of the substrate. The stacked structure includes a photoelectric conversion layer, a transparent electrode layer, and an insulating optical spacer.
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公开(公告)号：US12108613B2
公开(公告)日：2024-10-01
申请号：US17510576
申请日：2021-10-26
发明人： Keewon Kim , Byeongtaek Bae , Dail Eom , Minkyung Lee , Hajin Lim
摘要： A photoelectric conversion device includes a substrate and a wiring layer disposed on the substrate. The wiring layer includes a wiring structure and a wiring insulating layer that surrounds the wiring structure. A reflective layer is disposed on the wiring layer. The reflective layer is electrically connected to the wiring structure. A semi-permeable metal layer is spaced apart from the reflective layer in a thickness direction of the substrate. The semi-permeable metal layer faces the reflective layer to form a microcavity between the reflective layer and the semi-permeable metal layer. A stacked structure is between the reflective layer and the semi-permeable metal layer in the thickness direction of the substrate. The stacked structure includes a photoelectric conversion layer, a transparent electrode layer, and an insulating optical spacer.
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公开(公告)号：US10825990B2
公开(公告)日：2020-11-03
申请号：US16589330
申请日：2019-10-01
发明人： Da Il Eom , Keewon Kim , Byeongtaek Bae , Minkyung Lee
IPC分类号： H01L51/00 , H01L27/30 , H01L51/42 , H01L21/66 , H01L27/146
摘要： A method of measuring an image sensor is disclosed. The method includes connecting a measurement unit to an image sensor, producing an electric current, which sequentially flows through a second connection line, second lower electrodes, an upper electrode, first lower electrodes, and a first connection line of the image sensor, using the measurement unit, and measuring an alignment state of the lower electrodes, the photoelectric conversion layer, and the upper electrode.
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