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公开(公告)号：US11785789B2
公开(公告)日：2023-10-10
申请号：US17392996
申请日：2021-08-03
发明人： Gae Hwang Lee , Kwang Hee Lee , Sung Young Yun , Dong-Seok Leem , Yong Wan Jin
CPC分类号： H10K39/32 , H10K19/20 , H10K19/201
摘要： An organic image sensor may be configured to obtain a color signal associated with a particular wavelength spectrum of light absorbed by the organic image sensor may omit a color filter. The organic image sensor may include an organic photoelectric conversion layer including a first material and a second material. The first material may absorb a first wavelength spectrum of light, and the second material may absorb a second wavelength spectrum of light. The organic photoelectric conversion layer may include stacked upper and lower layers, and the respective material compositions of the lower and upper layers may be first and second mixtures of the first and second materials. A ratio of the first material to the second material in the first mixture may be greater than 1/1, and a ratio of the first material to the second material in the second mixture may be less than 1/1.
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公开(公告)号：US11713326B2
公开(公告)日：2023-08-01
申请号：US16938031
申请日：2020-07-24
发明人： Jisoo Shin , Chul Baik , Sung Young Yun , Taejin Choi , Kyung Bae Park , Gae Hwang Lee , Yeong Suk Choi , Chul Joon Heo , Hye Rim Hong
IPC分类号： C07D517/04 , H10K85/60 , H10K30/30
CPC分类号： C07D517/04 , H10K85/621 , H10K85/657 , H10K30/30
摘要： A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed:
In Chemical Formula 1, each substituent is the same as defined in the detailed description.-
公开(公告)号：US11683971B2
公开(公告)日：2023-06-20
申请号：US17227845
申请日：2021-04-12
发明人： Kyung Bae Park , Sung Young Yun , Gae Hwang Lee , Yong Wan Jin , Chui Joon Heo
IPC分类号： H01L27/32 , H01L31/105 , G06V10/143 , G06V40/13
CPC分类号： H01L27/3234 , G06V10/143 , G06V40/1318 , H01L27/323 , H01L27/3211 , H01L31/105
摘要： An OLED display panel may include a substrate, an OLED light emitter on the substrate and configured to emit light, and a visible light sensor on the substrate and configured to detect at least a portion of the emitted light based on reflection of the portion of the emitted light from a recognition target. The visible light sensor is in a non-light emitting region adjacent to the OLED light emitter so as to be horizontally aligned with the OLED light emitter in a horizontal direction extending parallel to an upper surface of the substrate, or between the substrate and a non-light emitting region adjacent to the OLED light emitter such that the visible light sensor is vertically aligned with the non-light emitting region in a vertical direction extending perpendicular to the upper surface of the substrate.
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4.发明公开公开(公告)号：US20230157162A1
公开(公告)日：2023-05-18
申请号：US18150450
申请日：2023-01-05
发明人： Jisoo Shin , Yeong Suk Choi , Katsunori Shibata , Taejin Choi , Sungyoung Yun , Ohkyu Kwon , Sangmo Kim , Hiromasa Shibuya , Gae Hwang Lee , Yong Wan Jin , Hyesung Choi , Chul Baik , Hyerim Hong
IPC分类号： H10K85/60 , C07D421/04 , C07F7/08 , C07D421/14 , C07F7/30 , C07D409/06 , C07D421/06 , C07F11/00 , H10K30/30 , H10K39/32 , H10K85/30 , H10K85/40
CPC分类号： H10K85/657 , C07D421/04 , C07F7/0816 , C07D421/14 , C07F7/30 , C07D409/06 , C07D421/06 , C07F11/00 , H10K30/30 , H10K39/32 , H10K85/30 , H10K85/40 , H10K85/615 , H10K85/636 , H10K85/649 , H10K85/654 , H10K85/655
摘要： A compound of Chemical Formula 1, and a photoelectric device, an image sensor, and an electronic device including the same are disclosed:
In Chemical Formula 1, each substituent is the same as defined in the detailed description.-
5.发明授权公开(公告)号：US11569451B2
公开(公告)日：2023-01-31
申请号：US17475688
申请日：2021-09-15
发明人： Jisoo Shin , Yeong Suk Choi , Katsunori Shibata , Taejin Choi , Sungyoung Yun , Ohkyu Kwon , Sangmo Kim , Hiromasa Shibuya , Gae Hwang Lee , Yong Wan Jin , Hyesung Choi , Chul Baik , Hyerim Hong
IPC分类号： H01L51/00 , H01L51/42 , C07D421/04 , C07D421/14 , C07D409/06 , C07D421/06 , H01L27/30 , C07F7/08 , C07F7/30 , C07F11/00
摘要： A compound of Chemical Formula 1, and a photoelectric device, an image sensor, and an electronic device including the same are disclosed: In Chemical Formula 1, each substituent is the same as defined in the detailed description.
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公开(公告)号：US11545515B2
公开(公告)日：2023-01-03
申请号：US16536583
申请日：2019-08-09
发明人： Dong-Seok Leem , Gae Hwang Lee , Ohkyu Kwon , Kwang Hee Lee , Hwang Suk Kim , Bum Woo Park , Hyesung Choi
IPC分类号： H01L27/146 , G02F1/17 , H04N5/225
摘要： A sensor includes a visible light sensor configured to sense light in a visible wavelength spectrum, a near infra-red light sensor on the visible light sensor and configured to sense light in a near infra-red wavelength spectrum, and an optical filter on the near infra-red light sensor and configured to selectively transmit the light in the visible wavelength spectrum and the light in the near infra-red wavelength spectrum, and an electronic device.
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公开(公告)号：US11495761B2
公开(公告)日：2022-11-08
申请号：US16815481
申请日：2020-03-11
发明人： Chui Joon Heo , Kyung Bae Park , Sung Jun Park , Sung Young Yun , Gae Hwang Lee , Chui Baik , Ji Soo Shin , Yong Wan Jin , Hye Rim Hong
摘要： A photoelectric conversion device includes a first electrode and a second electrode facing each other, an organic photoelectric conversion layer between the first electrode and the second electrode, and a charge auxiliary layer between the first electrode and the organic photoelectric conversion layer. The organic photoelectric conversion layer is configured to absorb light in at least a portion of a wavelength spectrum of incident light and to convert the absorbed light into an electrical signal. The charge auxiliary layer includes a metal and an oxide. The oxide may be an oxide material that excludes silicon oxide such that the charge auxiliary layer does not include silicon oxide.
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公开(公告)号：US11158827B2
公开(公告)日：2021-10-26
申请号：US16422233
申请日：2019-05-24
发明人： Dong-Seok Leem , Gae Hwang Lee , Sung Young Yun , Kwang Hee Lee , Yong Wan Jin
摘要： An IR organic photoelectric device having a simplified device structure may include an anode and a cathode facing each other and an infrared absorption and hole transport composite monolayer between the anode and the cathode. An organic image sensor including the IR organic photoelectric device may include an absorption layer between the infrared absorption and hole transport composite monolayer and the cathode.
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公开(公告)号：US11151349B2
公开(公告)日：2021-10-19
申请号：US16729993
申请日：2019-12-30
发明人： Gae Hwang Lee , Kyung Bae Park , Sung Jun Park , Sung Young Yun , Yong Wan Jin , Chul Joon Heo
摘要： A fingerprint sensor may include first and second electrodes, a light absorption layer isolated from direct contact with the first and second electrodes, and an insulation layer between the first electrode and the light absorption layer and further between the second electrode and the light absorption layer. A reflective layer may be between the light absorption layer and the first electrode. The insulation layer may include a first insulation layer between the first electrode and the light absorption layer, and a second insulation layer between the second electrode and the light absorption layer. A fingerprint sensor array including a plurality of fingerprint sensors may at least partially expose a plurality of sub-pixels of a display panel on which the fingerprint sensor array is located.
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公开(公告)号：US11005070B2
公开(公告)日：2021-05-11
申请号：US16704683
申请日：2019-12-05
发明人： Chul Joon Heo , Kyung Bae Park , Sung Young Yun , Tadao Yagi , Takkyun Ro , Gae Hwang Lee , Kwang Hee Lee , Yong Wan Jin
摘要： An organic photoelectronic device includes a first electrode and a second electrode facing each other, and first and second photoelectronic conversion layers between the first electrode and the second electrode. The first and second photoelectronic conversion layers include a p-type semiconductor and an n-type semiconductor. The first photoelectronic conversion layer has a first composition ratio (p1/n1) of the p-type semiconductor relative to the n-type semiconductor, the second photoelectronic conversion layer has a second composition ratio (p2/n2) of the p-type semiconductor relative to the n-type semiconductor, and the first composition ratio (p1/n1) is greater than the second composition ratio (p2/n2).
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