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1.
公开(公告)号:US12071447B2
公开(公告)日:2024-08-27
申请号:US17459582
申请日:2021-08-27
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hyeongju Kim , Hye Rim Hong , Kyung Bae Park , Jeong Il Park , Sung Young Yun , Seon-Jeong Lim , Youn Hee Lim , Taejin Choi
CPC classification number: C07F7/0816 , H10K30/82 , H10K39/32 , H10K85/40 , H10K85/6572
Abstract: A composition for a photoelectric device includes a p-type semiconductor compound represented by Chemical Formula 1 and an n-type semiconductor compound, and an image sensor and an electronic device including the same:
In Chemical Formula 1, each substituent is the same as defined in the detailed description.-
2.
公开(公告)号:US11963440B2
公开(公告)日:2024-04-16
申请号:US17065816
申请日:2020-10-08
Applicant: Samsung Electronics Co., Ltd.
Inventor: Taejin Choi , Jeong Il Park , Jisoo Shin , Sung Young Yun , Seon-Jeong Lim , Youn Hee Lim , Yeong Suk Choi , Hye Rim Hong
IPC: H01L51/00 , C07D421/04 , C07D421/06 , C07D421/14 , H10K85/60 , H10K19/20 , H10K30/30 , H10K39/32
CPC classification number: H10K85/657 , C07D421/04 , C07D421/06 , C07D421/14 , H10K85/636 , H10K85/654 , H10K19/20 , H10K30/30 , H10K39/32
Abstract: A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed:
In Chemical Formula 1, the definition of each group and parameter is as described in the detailed description.-
公开(公告)号:US11929384B2
公开(公告)日:2024-03-12
申请号:US18186402
申请日:2023-03-20
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kyung Bae Park , Yong Wan Jin , Sung Young Yun , Sung Jun Park , Feifei Fang , Chul Joon Heo
IPC: H01L27/146 , H01L31/0352
CPC classification number: H01L27/14647 , H01L31/035209
Abstract: An image sensor may include a first photo-sensing device on a semiconductor substrate and configured to sense light of a first wavelength spectrum, and second and third photo-sensing devices integrated in the semiconductor substrate and configured to sense light of a second and third wavelength spectrum, respectively. The first photo-sensing device may overlap each of the second and third photo-sensing devices in a thickness direction of the semiconductor substrate. The second and third photo-sensing devices do not overlap in the thickness direction and each have an upper surface, a lower surface, and a doped region therebetween. The third photo-sensing device includes an upper surface deeper further from the upper surface of the semiconductor substrate than the upper surface of the second photo-sensing device and a doped region thicker than the doped region of the second photo-sensing device. The image sensor may omit the first photo-sensing device.
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公开(公告)号:US11854294B2
公开(公告)日:2023-12-26
申请号:US17464100
申请日:2021-09-01
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kyung Bae Park , Sung Han Kim , Sung Young Yun , Seon-Jeong Lim , Chul Joon Heo
IPC: G06V40/13
CPC classification number: G06V40/1318
Abstract: An electronic device includes a display panel and a biometric sensor. The display panel includes a light emitter. The biometric sensor is stacked with the display panel and is configured to detect light emitted from the display panel and reflected by a recognition target that is external to the electronic device. The biometric sensor includes a silicon substrate and a photoelectric conversion element on the silicon substrate. The photoelectric conversion element includes a photoelectric conversion layer having wavelength selectivity.
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公开(公告)号:US11737360B2
公开(公告)日:2023-08-22
申请号:US17070502
申请日:2020-10-14
Applicant: Samsung Electronics Co., Ltd.
Inventor: Daiki Minami , Sung Young Yun , Kyung Bae Park , Sung Jun Park , Chul Joon Heo
CPC classification number: H10K85/6572 , H10K30/30 , H10K30/81 , H10K85/40 , H10K85/631 , H10K85/654 , H10K2102/00
Abstract: Disclosed are a photoelectric conversion device, and a sensor and an electronic device including the same. The photoelectric conversion device may include a first electrode and a second electrode and a photoelectric conversion layer between the first electrode and the second electrode. The photoelectric conversion layer includes a first material and a second material, which form a pn junction, and a third material that is different from the first material and the second material. The third material is configured to modify a distribution of energy levels of the first material or the second material.
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公开(公告)号:US11683599B2
公开(公告)日:2023-06-20
申请号:US17227676
申请日:2021-04-12
Applicant: Samsung Electronics Co., Ltd.
Inventor: Gae Hwang Lee , Kwang Hee Lee , Kyung Bae Park , Sung Young Yun , Dong-Seok Leem , Yong Wan Jin
IPC: H04N25/79 , H04N25/17 , H04N5/32 , H01L27/146
CPC classification number: H04N25/17 , H01L27/14621 , H01L27/14627 , H01L27/14629 , H04N5/32
Abstract: An image sensor may include a photoelectric device configured to selectively absorb light associated with a first color of three primary colors, a semiconductor substrate stacked with the photoelectric device and including first and second photo-sensing devices configured to sense light associated with second and third colors of the three primary colors, respectively, a first color filter corresponding to the first photo-sensing device and configured to selectively transmit light of the first wavelength spectrum, a second color filter corresponding to the second photo-sensing device and configured to selectively transmit light associated with a mixed color of the first color and the third color, and a first insulating layer between the photoelectric device and the semiconductor substrate and corresponding to the second photo-sensing device, and configured to selectively reflect light of a part of visible light.
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公开(公告)号:US11532671B2
公开(公告)日:2022-12-20
申请号:US15471289
申请日:2017-03-28
Applicant: Samsung Electronics Co., Ltd.
Inventor: Dong-Seok Leem , Kwang Hee Lee , Tadao Yagi , Sung Young Yun , Gae Hwang Lee , Seon-Jeong Lim , Yong Wan Jin
Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other and a light-absorption layer between the first electrode and the second electrode and including a photoelectric conversion region including a p-type light-absorbing material and an n-type light-absorbing material and a doped region including an exciton quencher and at least one of the p-type light-absorbing material and the n-type light-absorbing material, wherein at least one of the p-type light-absorbing material and the n-type light-absorbing material selectively absorbs a part of visible light, and an image sensor includes the same.
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公开(公告)号:US11411192B2
公开(公告)日:2022-08-09
申请号:US16984510
申请日:2020-08-04
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kyung Bae Park , Naotoshi Suganuma , Chul Joon Heo , Sung Jun Park , Sung Young Yun
Abstract: A device includes a first electrode and a second electrode, an active layer between the first electrode and the second electrode and a plurality of auxiliary layers between the first electrode and the active layer. The auxiliary layers include first and second auxiliary layers, the first auxiliary layer proximate to the active layer, the second auxiliary layer proximate to the second electrode. An energy level of the active layer, an energy level of the first auxiliary layer, an energy level of the second auxiliary layer, and a work function of the first electrode become deeper sequentially or shallower sequentially.
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公开(公告)号:US11322688B2
公开(公告)日:2022-05-03
申请号:US16875168
申请日:2020-05-15
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hiromasa Shibuya , Chul Baik , Yutaka Matsuo , Sung Young Yun , Seon-Jeong Lim , Ji Soo Shin , Gae Hwang Lee , Yeong Suk Choi , Taejin Choi , Hye Rim Hong
IPC: H01L51/00 , C07D209/56 , H01L27/30 , H01L51/42
Abstract: Disclosed are an N-type semiconductor composition including fullerene or a fullerene derivative; and fullerene subunit derivative represented by Chemical Formula 1, and a thin film, an organic photoelectric device, an image sensor and an electronic device including the same. In Chemical Formula 1, X, Cy and R1 to R8 are the same as defined in the detailed description.
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公开(公告)号:US20220036028A1
公开(公告)日:2022-02-03
申请号:US17503663
申请日:2021-10-18
Applicant: Samsung Electronics Co., Ltd.
Inventor: Gae Hwang Lee , Kyung Bae Park , Sung Jun Park , Sung Young Yun , Yong Wan Jin , Chul Joon Heo
Abstract: A fingerprint sensor may include first and second electrodes, a light absorption layer isolated from direct contact with the first and second electrodes, and an insulation layer between the first electrode and the light absorption layer and further between the second electrode and the light absorption layer. A reflective layer may be between the light absorption layer and the first electrode. The insulation layer may include a first insulation layer between the first electrode and the light absorption layer, and a second insulation layer between the second electrode and the light absorption layer. A fingerprint sensor array including a plurality of fingerprint sensors may at least partially expose a plurality of sub-pixels of a display panel on which the fingerprint sensor array is located.
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