公开(公告)号：US12096642B2

公开(公告)日：2024-09-17

申请号：US17519340

申请日：2021-11-04

申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

发明人： Atsushi Toda

IPC分类号： H01L27/30 ,  H01L27/14 ,  H01L27/146 ,  H04N5/374 ,  H04N25/13 ,  H04N25/17 ,  H04N25/70 ,  H04N25/702 ,  H04N25/76 ,  H10K19/20 ,  H10K39/32

CPC分类号： H10K39/32 ,  H01L27/14 ,  H01L27/146 ,  H01L27/14603 ,  H01L27/1461 ,  H01L27/14621 ,  H01L27/1464 ,  H01L27/14665 ,  H04N25/134 ,  H04N25/136 ,  H04N25/17 ,  H04N25/70 ,  H04N25/702 ,  H04N25/76 ,  H10K19/20 ,  H01L27/14647 ,  H04N25/13

摘要： The present disclosure relates to a solid-state imaging device that can achieve a high S/N ratio at a high sensitivity level without any decrease in resolution, and to an electronic apparatus. In the upper layer, the respective pixels of a photoelectric conversion unit that absorbs light of a first wavelength are tilted at approximately 45 degrees with respect to a square pixel array, and are two-dimensionally arranged in horizontal directions and vertical directions in an oblique array. The respective pixels of a photoelectric conversion unit that is sensitive to light of a second or third wavelength are arranged under the first photoelectric conversion unit. That is, pixels that are √{square root over (2)} times as large in size (twice as large in area) and are rotated 45 degrees are arranged in an oblique array. The present disclosure can be applied to solid-state imaging devices that are used in imaging apparatuses, for example.

公开(公告)号：US20240040273A1

公开(公告)日：2024-02-01

申请号：US18227095

申请日：2023-07-27

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Sookyoung ROH ,  Junho LEE ,  Seokho YUN

IPC分类号： H04N25/17 ,  H04N25/704 ,  H04N23/67 ,  H01L27/146 ,  G02B3/00 ,  G02B7/36

CPC分类号： H04N25/17 ,  H04N25/704 ,  H04N23/67 ,  H01L27/14645 ,  H01L27/14627 ,  G02B3/0037 ,  G02B7/36

摘要： Provided is an image sensor including a pixel array including a plurality of imaging pixels and a plurality of autofocusing pixels, and a lens array including a plurality of micro lenses facing the plurality of imaging pixels, respectively, and one or more super lenses facing the plurality of autofocusing pixels, wherein each imaging pixel of the plurality of imaging pixels includes a first red meta-photodiode configured to selectively absorb light of a red wavelength band, a first green meta-photodiode configured to selectively absorb light of a green wavelength band, and a first blue meta-photodiode configured to selectively absorb light of a blue wavelength band.

公开(公告)号：US20240155269A1

公开(公告)日：2024-05-09

申请号：US18224320

申请日：2023-07-20

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Youngzoon YOON

IPC分类号： H04N25/79 ,  G02B13/00 ,  H04N25/17 ,  H04N25/702

CPC分类号： H04N25/79 ,  G02B13/0055 ,  H04N25/17 ,  H04N25/702

摘要： Provided is a vertically stacked type image sensor including a plurality of pixels, each of the plurality of pixels including a plurality of sub-pixels stacked vertically, wherein the plurality of sub-pixels have a layer structure that is configured to generate an absorption resonance at different wavelengths of light.

公开(公告)号：US20240047502A1

公开(公告)日：2024-02-08

申请号：US18486818

申请日：2023-10-13

申请人： SONY GROUP CORPORATION

发明人： Akira TANAKA ,  Shohei SHIMADA

IPC分类号： H01L27/146 ,  H04N25/17 ,  H04N25/57 ,  H04N25/76 ,  H04N25/13 ,  H04N25/583 ,  H04N25/702 ,  H04N25/704 ,  H04N25/778

CPC分类号： H01L27/14643 ,  H01L27/146 ,  H01L27/14667 ,  H01L27/14645 ,  H01L27/14641 ,  H01L27/14647 ,  H04N25/17 ,  H04N25/57 ,  H04N25/76 ,  H04N25/134 ,  H04N25/136 ,  H04N25/583 ,  H04N25/702 ,  H04N25/704 ,  H04N25/778 ,  H01L27/14605 ,  H01L27/14612 ,  H01L27/14627 ,  H01L27/14621

摘要： The present technology relates to a solid-state imaging device, a driving method therefor, and an electronic apparatus capable of acquiring a signal to detect phase difference and a signal to generate a high dynamic range image at the same time. The solid-state imaging device includes a pixel array unit in which a plurality of pixels that receives light of a same color is arranged under one on-chip lens. The plurality of pixels uses at least one pixel transistor in a sharing manner, some pixels out of the plurality of pixels are set to have a first exposure time, and other pixels are set to have a second exposure time shorter than the first exposure time. The present technology can be applied to, for example, a solid-state imaging device or the like.

公开(公告)号：US11916093B2

公开(公告)日：2024-02-27

申请号：US17524969

申请日：2021-11-12

申请人： SONY GROUP CORPORATION

发明人： Akira Tanaka ,  Shohei Shimada

IPC分类号： H01L27/146 ,  H04N25/17 ,  H04N25/57 ,  H04N25/76 ,  H04N25/13 ,  H04N25/583 ,  H04N25/702 ,  H04N25/704 ,  H04N25/778

CPC分类号： H01L27/14643 ,  H01L27/146 ,  H01L27/14605 ,  H01L27/14612 ,  H01L27/14641 ,  H01L27/14645 ,  H01L27/14647 ,  H01L27/14667 ,  H04N25/134 ,  H04N25/136 ,  H04N25/17 ,  H04N25/57 ,  H04N25/583 ,  H04N25/702 ,  H04N25/704 ,  H04N25/76 ,  H04N25/778 ,  H01L27/14621 ,  H01L27/14627

摘要： The present technology relates to a solid-state imaging device, a driving method therefor, and an electronic apparatus capable of acquiring a signal to detect phase difference and a signal to generate a high dynamic range image at the same time. The solid-state imaging device includes a pixel array unit in which a plurality of pixels that receives light of a same color is arranged under one on-chip lens. The plurality of pixels uses at least one pixel transistor in a sharing manner, some pixels out of the plurality of pixels are set to have a first exposure time, and other pixels are set to have a second exposure time shorter than the first exposure time. The present technology can be applied to, for example, a solid-state imaging device or the like.

公开(公告)号：US11683599B2

公开(公告)日：2023-06-20

申请号：US17227676

申请日：2021-04-12

申请人： Samsung Electronics Co., Ltd.

发明人： Gae Hwang Lee ,  Kwang Hee Lee ,  Kyung Bae Park ,  Sung Young Yun ,  Dong-Seok Leem ,  Yong Wan Jin

IPC分类号： H04N25/79 ,  H04N25/17 ,  H04N5/32 ,  H01L27/146

CPC分类号： H04N25/17 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H04N5/32

摘要： An image sensor may include a photoelectric device configured to selectively absorb light associated with a first color of three primary colors, a semiconductor substrate stacked with the photoelectric device and including first and second photo-sensing devices configured to sense light associated with second and third colors of the three primary colors, respectively, a first color filter corresponding to the first photo-sensing device and configured to selectively transmit light of the first wavelength spectrum, a second color filter corresponding to the second photo-sensing device and configured to selectively transmit light associated with a mixed color of the first color and the third color, and a first insulating layer between the photoelectric device and the semiconductor substrate and corresponding to the second photo-sensing device, and configured to selectively reflect light of a part of visible light.