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公开(公告)号：US12176366B2
公开(公告)日：2024-12-24
申请号：US17453253
申请日：2021-11-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dong Min Keum , Yun Ki Lee , Jun Sung Park , Dong Kyu Lee , Bum Suk Kim , Kwang Hee Lee , Tae Sung Lee
IPC: H01L27/146 , H04N25/79
Abstract: An image sensor that provides a uniform sensitivity for pixels having color filters of the same color to increase the image quality is provided. The image sensor includes a substrate, a first grid pattern disposed on the substrate and including a first side wall and a second side wall opposite to the first side wall, a first pixel including a first photoelectric conversion element and a first color filter, and a second pixel including a second photoelectric conversion element and a second color filter. The first color filter contacts the first side wall and the second color filter contacts the second side wall. The first color filter and the second color filter are color filters of same color, and a first thickness of the first color filter is greater than a second thickness of the second color filter.
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公开(公告)号：US12035548B2
公开(公告)日：2024-07-09
申请号：US17232658
申请日：2021-04-16
Applicant: Samsung Electronics Co., Ltd.
Inventor： Gae Hwang Lee , Dong-Seok Leem , Kwang Hee Lee , Sung Young Yun , Yong Wan Jin
CPC classification number: H10K39/32 , G02B5/208 , H01L27/14621 , H01L27/14649 , H01L27/14667 , H10K30/80 , H10K85/211 , H10K85/215
Abstract: An image sensor may include a photodiode within a semiconductor substrate and configured to sense light in an infrared wavelength spectrum of light, a photoelectric conversion device on the semiconductor substrate and configured to sense light in a visible wavelength spectrum of light, and a filtering element configured to selectively transmit at least a portion of the infrared wavelength spectrum of light and the visible wavelength spectrum of light. The filtering element may include a plurality of color filters on the photoelectric conversion device. The photoelectric conversion device may include a pair of electrodes facing each other and a photoelectric conversion layer between the pair of electrodes and configured to selectively absorb light in a visible wavelength spectrum of light. The filtering element may be between the semiconductor substrate and the photoelectric conversion device and may selectively absorb the infrared light and selectively transmit the visible light.
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公开(公告)号：US11871642B2
公开(公告)日：2024-01-09
申请号：US17587295
申请日：2022-01-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyung Bae Park , Kwang Hee Lee , Chul Joon Heo
IPC: H10K59/60 , H10K50/818 , H10K59/126 , G06V40/19 , G06V40/16 , H10K50/828 , H01L27/146 , G06V40/13 , H10K102/00
CPC classification number: H10K59/60 , H10K50/818 , H10K50/828 , H10K59/126 , G06V40/1318 , G06V40/166 , G06V40/19 , H01L27/14678 , H10K2102/3026
Abstract: An OLED panel for implementing biometric recognition influencing an aperture ratio of an OLED light emitter i includes a substrate, an OLED on the substrate, and a driver on the substrate. The OLED may emit visible light, and the driver may drive the OLED. The driver may include a visible light sensor configured to detect the visible light emitted by the OLED, and the visible light sensor may overlap the OLED in a direction that is substantially perpendicular to an upper surface of the substrate. The OLED panel may include a near infrared ray OLED that is configured to emit near infrared rays, and the driver may include a near infrared ray sensor configured to detect near infrared rays emitted by the near infrared ray OLED. The near infrared ray sensor may overlap the OLED in a direction that is substantially perpendicular to an upper surface of the substrate.
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公开(公告)号：US11849595B2
公开(公告)日：2023-12-19
申请号：US16944873
申请日：2020-07-31
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hwang Suk Kim , Ohkyu Kwon , Bum Woo Park , Kwang Hee Lee , Dong-Seok Leem , Hyesung Choi , Dongseon Lee
IPC: C07D285/14 , C07D293/10 , H10K30/20 , H10K30/87 , H10K85/10
CPC classification number: H10K30/20 , C07D285/14 , C07D293/10 , H10K30/87 , H10K85/111
Abstract: A near-infrared absorber includes a compound represented by Chemical Formula 1. A near-infrared absorbing/blocking film, a photoelectric device, an organic sensor, and an electronic device may include the near-infrared absorber.
In Chemical Formula 1, Ar1, Ar2, X1, L1, L2, R1, R2, R3, and R4 are the same as defined in the detailed description.-
公开(公告)号：US11495640B2
公开(公告)日：2022-11-08
申请号：US15471289
申请日：2017-03-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dong-Seok Leem , Kwang Hee Lee , Tadao Yagi , Sung Young Yun , Gae Hwang Lee , Seon-Jeong Lim , Yong Wan Jin
Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other and a light-absorption layer between the first electrode and the second electrode and including a photoelectric conversion region including a p-type light-absorbing material and an n-type light-absorbing material and a doped region including an exciton quencher and at least one of the p-type light-absorbing material and the n-type light-absorbing material, wherein at least one of the p-type light-absorbing material and the n-type light-absorbing material selectively absorbs a part of visible light, and an image sensor includes the same.
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Patent Agency Ranking
公开(公告)号：US11114634B2
公开(公告)日：2021-09-07
申请号：US16031412
申请日：2018-07-10
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyung Bae Park , Kyu Sik Kim , Yong Wan Jin , Kwang Hee Lee , Dong-Seok Leem , Seon-Jeong Lim
IPC: H01L51/42
Abstract: A photodiode according to example embodiments includes an anode, a cathode, and an intrinsic layer between the anode and the cathode. The intrinsic layer includes a P-type semiconductor and an N-type semiconductor, and composition ratios of the P-type semiconductor and the N-type semiconductor vary within the intrinsic layer depending on a distance of the intrinsic layer from one of the anode and the cathode.
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公开(公告)号：US10950641B2
公开(公告)日：2021-03-16
申请号：US16026224
申请日：2018-07-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Yong Wan Jin , Gae Hwang Lee , Seon-Jeong Lim , Sung Young Yun , Kwang Hee Lee
IPC: H01L27/146 , H01L27/30 , H04N1/00
Abstract: An image sensor includes a semiconductor substrate including a plurality of photo-sensing devices, a photoelectric conversion device disposed on the semiconductor substrate and absorbing the mixed light of a first color and a second color, and a color filter disposed on one side of the photoelectric conversion device and configured to selectively transmit a mixed light including a third color, and an electronic device including the image sensor is provided.
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公开(公告)号：US20200296269A1
公开(公告)日：2020-09-17
申请号：US16536583
申请日：2019-08-09
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dong-Seok LEEM , Gae Hwang Lee , Ohkyu Kwon , Kwang Hee Lee , Hwang Suk Kim , Bum Woo Park , Hyesung Choi
Abstract: A sensor includes a visible light sensor configured to sense light in a visible wavelength spectrum, a near infra-red light sensor on the visible light sensor and configured to sense light in a near infra-red wavelength spectrum, and an optical filter on the near infra-red light sensor and configured to selectively transmit the light in the visible wavelength spectrum and the light in the near infra-red wavelength spectrum, and an electronic device.
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9.发明授权公开(公告)号：US10566544B2
公开(公告)日：2020-02-18
申请号：US16297931
申请日：2019-03-11
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hiromasa Shibuya , Tatsuya Imase , Rie Sakurai , Xavier Bulliard , Hyesung Choi , Tadao Yagi , Sung Young Yun , Gae Hwang Lee , Kwang Hee Lee , Dong-Seok Leem , Yeong Suk Choi
IPC: C07D343/00 , C09K11/06 , H05B33/14 , H01L51/50 , H01L51/00 , C07D421/12 , C07D421/14 , C07F11/00 , H01L27/30 , H01L51/42 , H01L51/44
Abstract: Example embodiments provide a compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same.
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公开(公告)号：US10381412B2
公开(公告)日：2019-08-13
申请号：US15334586
申请日：2016-10-26
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dong-Seok Leem , Seon-Jeong Lim , Kwang Hee Lee , Xavier Bulliard , Yong Wan Jin , Tadao Yagi
Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other, photoelectronic conversion layer between the first electrode and the second electrode and including a first material and a second material providing a p-n junction and an interlayer being adjacent to the first electrode between the first electrode and the photoelectronic conversion layer and including a third material, wherein the first material and the third material are an organic material having each energy bandgap of about 1.7 eV to about 2.3 eV, and an image sensor including the same is provided.
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