Abstract:
Provided is an image sensor including a sensor substrate including a first pixel configured to sense light of a first wavelength, and a second pixel configured to sense light of a second wavelength, and a color separating lens array configured to concentrate the light of the first wavelength on the first pixel, and the light of the second wavelength on the second pixel, the color separating lens array including a first pixel-corresponding area corresponding to the first pixel, and a second pixel-corresponding area corresponding to the second pixel, wherein a first phase difference between the light of the first wavelength that has traveled through a center of the first pixel-corresponding area and a center of the second pixel-corresponding area is different than a second phase difference between the light of the second wavelength that has traveled through the center of the first pixel-corresponding area and the center of the second pixel-corresponding area.
Abstract:
Provided are an image sensor including a color separating lens array and an electronic apparatus. The image sensor includes: a sensor substrate including a plurality of first pixels and a plurality of second pixels, wherein each of the first pixels includes a plurality of photosensitive cells that are two-dimensionally arranged in a first direction and a second direction, and, a first pixel of a first group includes a first edge region and a second edge region that are arranged at opposite edges of the first pixel in the first direction and outputs first and second photosensitive signals with respect to the light incident on the first and second edge regions.
Abstract:
Provided is an image sensor including a planar nanophotonic microlens array, and an electronic device including the image sensor that includes a planar nanophotonic microlens array including a plurality of planar nanophotonic microlenses, wherein each of the plurality of planar nanophotonic microlenses includes a high refractive index nanostructure including a dielectric material having a first refractive index and a low refractive index structure including a dielectric material having a second refractive index lower than the first refractive index, and each of the plurality of planar nanophotonic microlenses at a peripheral portion of the planar nanophotonic microlens array has an asymmetric effective refractive index distribution in which an effective refractive index distribution on a first side of the refractive index peak region is different from a second side of the refractive index peak region, the first side being closer to the center portion of the planar nanophotonic microlens array.
Abstract:
Provided is an image sensor including a planar nanophotonic microlens array, and an electronic device including the image sensor. The image sensor includes a planar nanophotonic microlens array including a plurality of planar nanophotonic microlenses, wherein each of the plurality of planar nanophotonic microlenses includes a high refractive index nanostructure including a dielectric material having a first refractive index and a low refractive index nanostructure including a dielectric material having a second refractive index lower than the first refractive index, and wherein each of the plurality of planar nanophotonic microlenses is shifted toward a center portion of the planar nanophotonic microlens array and positioned at a periphery of the planar nanophotonic microlens array.
Abstract:
Provided is an image sensor including a sensor substrate including a first pixel configured to sense light of a first wavelength, and a second pixel configured to sense light of a second wavelength, and a color separating lens array configured to concentrate the light of the first wavelength on the first pixel, and the light of the second wavelength on the second pixel, the color separating lens array including a first pixel-corresponding area corresponding to the first pixel, and a second pixel-corresponding area corresponding to the second pixel, wherein a first phase difference between the light of the first wavelength that has traveled through a center of the first pixel-corresponding area and a center of the second pixel-corresponding area is different than a second phase difference between the light of the second wavelength that has traveled through the center of the first pixel-corresponding area and the center of the second pixel-corresponding area.
Abstract:
Provided is an image sensor including a sensor substrate including a first photo-sensing cell and a second photo-sensing cell configured to sense light, a spacer layer that is transparent and disposed on the sensor substrate, and a color separating lens array disposed on the spacer layer and including a first region disposed opposite to the first photo-sensing cell in a vertical direction and having a first pattern, and a second region disposed opposite to the second photo-sensing cell in the vertical direction and having a second pattern that is different from the first pattern, and wherein the first pattern is configured to separate, from incident light, a first wavelength light and condense the first wavelength light to the first photo-sensing cell, and the second pattern is configured to separate, from the incident light, a second wavelength light and condense the second wavelength light to the second photo-sensing cell.
Abstract:
A color filter array may include a plurality of color filters arranged two-dimensionally and configured to allow light of different wavelengths to pass therethrough. Each of the plurality of color filters includes at least one Mie resonance particle and a transparent dielectric surrounding the at least one Mie resonance particle.
Abstract:
A stacked image sensor includes a first photoelectric conversion layer including a plurality of first photoelectric conversion regions; a second photoelectric conversion layer disposed on the first photoelectric conversion layer, and including a plurality of second photoelectric conversion regions; and a plurality of color filters disposed on the plurality of second photoelectric conversion regions, wherein at least one of the plurality of first photoelectric conversion regions includes a plurality of third photoelectric conversion regions that perform auto-focusing.
Abstract:
An image sensor includes a pixel array having a Bayer pattern structure including a first pixel row in which first pixels and second pixels are alternately provided and a second pixel row in which additional ones of the second pixels and third pixels are alternately provided, a first element to control light of a first wavelength band to travel in directions toward left and right sides of the first element and to control light of a second wavelength band of the incident light to travel in a direction directly under the first element, and a second element to control light of a third wavelength band to travel in the directions toward the left and right sides of the second element and to control the light of the second wavelength band to travel in a direction directly under the second element.
Abstract:
An image sensor includes a first pixel row including a plurality of first pixels configured to sense first wavelength light, the first wavelength light having a first wavelength, a second pixel row adjacent to the first pixel row, the second pixel row including a plurality of second pixels configured to sense second wavelength light and a plurality of third pixels configured to sense third wavelength light, the plurality of second pixels and the plurality of third pixels being alternately arranged, the second wavelength light having a second wavelength and the third wavelength light having a third wavelength and a plurality of first color separation elements in the plurality of second pixels, respectively, the plurality of separation elements configured to change a spectrum distribution of incident light.