PRECIOUS METAL COMPLEXES WITH DIHYDROAZULENYL LIGANDS AND USE THEREOF

    公开(公告)号:US20240317788A1

    公开(公告)日:2024-09-26

    申请号:US18262532

    申请日:2022-02-04

    Abstract: The invention relates to a method for producing complexes of precious metals, in particular platinum, which have at least one organo-dihydroazulenyl ligand. The invention also relates to complexes of precious metals, in particular platinum, which have at least one organo-dihydroazulenyl ligand and to the use of the aforementioned metal complexes as precatalysts or catalysts in a chemical reaction or as precursor compounds for producing a layer which contains a precious metal, in particular platinum, or a metal layer consisting of a precious metal, in particular platinum, in particular on at least one surface of a substrate. The invention additionally relates to a substrate, in particular a substrate which can be obtained according to such a method. The invention also relates to a crosslinkable silicon composition comprising at least one compound with aliphatic carbon-carbon multi-bonds, at least one compound with Si-bonded hydrogen atoms, and at least one platinum (IV) complex of the aforementioned type. The invention also relates to novel alkali metal organo-dihydroazulenyls which can be used to produce metal complexes, in particular of the aforementioned type.

    PRODUCTION OF MoO2Cl2
    8.
    发明公开

    公开(公告)号:US20240083766A1

    公开(公告)日:2024-03-14

    申请号:US17642688

    申请日:2021-12-02

    CPC classification number: C01G39/04 B01D7/00 C01P2006/40 C01P2006/80

    Abstract: The invention relates to a method for producing MoO2Cl2 under inert conditions, comprising the steps of:



    (i) charging a reaction vessel with MoO2,
    (ii) reacting the MoO2 with supplied Cl2 in the reaction vessel at a first temperature T1 to give gaseous MoO2Cl2,
    (iii) transferring the gaseous MoO2Cl2 into a receiving vessel,
    (iv) resublimating the gaseous MoO2Cl2 in the receiving vessel to give solid MoO2Cl2 at a second temperature T2 that is lower than T1, and
    (v) recovering solid MoO2Cl2 with a purity determined by ICP-OES/MS of 99.9996 wt. % or more.




    The invention also relates to high-purity MoO2Cl2, the use thereof, and electronic components.

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