公开(公告)号：US20240355633A1

公开(公告)日：2024-10-24

申请号：US18762702

申请日：2024-07-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Yen Chen

IPC: H01L21/308 ,  H01L21/033 ,  H01L21/306 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768

CPC classification number: H01L21/3086 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/30604 ,  H01L21/3088 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76802 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76816

Abstract: A method includes forming an etching mask to cover a mandrel, a first spacer, and a second spacer, and the first spacer and the second spacer are in contact with opposing sidewalls of the mandrel. The etching mask is then patterned, and includes a first portion covering the first spacer, a second portion covering the second spacer, and a bridge portion connecting the first portion to the second portion. The bridge portion has first sidewalls. A first etching process is performed on the mandrel using the etching mask to define pattern, and after the first etching process, the mandrel includes a second bridge portion having second sidewalls vertically aligned to corresponding ones of the first sidewalls. After the mandrel is etched-through, a second etching process is performed to laterally recess the second bridge portion of the mandrel.

公开(公告)号：US20240355632A1

公开(公告)日：2024-10-24

申请号：US18638335

申请日：2024-04-17

Applicant: SHIN-ETSU CHEMICAL CO., LTD.

Inventor： Yasuyuki YAMAMOTO ,  Tomohiro IMATA ,  Daisuke KORI

IPC: H01L21/308 ,  G03F7/09 ,  H01L21/027 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/3081 ,  G03F7/094 ,  H01L21/0275 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139

Abstract: The present invention is a composition for forming an organic film, comprising: a resin for forming an organic film; a polymer having a unit represented by the general formula (I), and at least one of a unit represented by the general formula (II) and a unit represented by the general formula (III); and a solvent, wherein the unit represented by the general formula (I), and at least one of the unit represented by the general formula (II) and the unit represented by the general formula (III) form a random copolymer, and the polymer has a fluorine content of 5 mass % to 16 mass %. This provides: a composition for forming an organic film that has excellent film-formability on a substrate and filling characteristics, and that inhibits humps in EBR process; and a method for forming an organic film, and patterning process using this composition.

公开(公告)号：US12112954B2

公开(公告)日：2024-10-08

申请号：US17160780

申请日：2021-01-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Maju Tomura ,  Tomohiko Niizeki ,  Takayuki Katsunuma ,  Hironari Sasagawa ,  Yuta Nakane ,  Shinya Ishikawa ,  Kenta Ono ,  Sho Kumakura ,  Yusuke Takino ,  Masanobu Honda

IPC: H01L21/311 ,  H01L21/3205 ,  H01L21/3213

CPC classification number: H01L21/31144 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32055 ,  H01L21/32137 ,  H01L21/32139

Abstract: An etching method includes forming a film on a surface of a substrate having a region to be etched and a mask. The mask is provided on the region and includes an opening that partially exposes the region. The film is made of the same material as that of the region. The etching method further includes etching the region.

公开(公告)号：US12106963B2

公开(公告)日：2024-10-01

申请号：US18140425

申请日：2023-04-27

Applicant: Tessera LLC

Inventor： Sean D. Burns ,  Lawrence A. Clevenger ,  Matthew E. Colburn ,  Nelson M. Felix ,  Sivananda K. Kanakasabapathy ,  Christopher J. Penny ,  Roger A. Quon ,  Nicole A. Saulnier

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/528 ,  H01L21/027 ,  H01L21/28 ,  H01L21/31 ,  H10K71/20 ,  H10N70/00

CPC classification number: H01L21/0337 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76816 ,  H01L23/528 ,  H01L21/0274 ,  H01L21/28123 ,  H01L21/31 ,  H01L21/76897 ,  H01L2224/0362 ,  H01L2224/11622 ,  H10K71/233 ,  H10N70/063

Abstract: A method of forming a structure for etch masking that includes forming first dielectric spacers on sidewalls of a plurality of mandrel structures and forming non-mandrel structures in space between adjacent first dielectric spacers. Second dielectric spacers are formed on sidewalls of an etch mask having a window that exposes a connecting portion of a centralized first dielectric spacer. The connecting portion of the centralized first dielectric spacer is removed. The mandrel structures and non-mandrel structures are removed selectively to the first dielectric spacers to provide an etch mask. The connecting portion removed from the centralized first dielectric spacer provides an opening connecting a first trench corresponding to the mandrel structures and a second trench corresponding to the non-mandrel structures.

公开(公告)号：US12096609B2

公开(公告)日：2024-09-17

申请号：US17826754

申请日：2022-05-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Lien Huang

IPC: H10B10/00 ,  H01L21/033 ,  H01L21/3213 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/66 ,  H01L29/78

CPC classification number: H10B10/12 ,  H01L21/0332 ,  H01L21/32137 ,  H01L21/32139 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/785 ,  H10B10/18

Abstract: The present disclosure provides example embodiments relating to conductive features, and methods of forming the conductive features, that have differing dimensions. In an embodiment, a structure includes a substrate, a dielectric layer over the substrate, and first and second conductive features through the dielectric layer to first and second source/drain regions, respectively, on the substrate. The first conductive feature has a first length along a longitudinal axis of the first conductive feature and a first width perpendicular to the first length. The second conductive feature has a second length along a longitudinal axis of the second conductive feature and a second width perpendicular to the second length. The longitudinal axis of the first conductive feature is aligned with the longitudinal axis of the second conductive feature. The first width is greater than the second width, and the first length is less than the second length.

公开(公告)号：US12094723B2

公开(公告)日：2024-09-17

申请号：US17442308

申请日：2021-06-30

Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.

Inventor： Yuejiao Shu ,  Ming-Pu Tsai

IPC: H10B12/00 ,  H01L21/027 ,  H01L21/3213

CPC classification number: H01L21/32139 ,  H01L21/0273 ,  H10B12/482

Abstract: The present disclosure provides a method for forming semiconductor structure and a semiconductor structure. The method for forming semiconductor structure includes: providing a semiconductor base with a substrate and a first oxide material layer; wherein the first oxide material layer is arranged on the substrate, the first oxide material layer includes a first region and a second region located at edge of the first region; patterning and etching the first oxide material layer; wherein oxide line structures are formed, and an annular empty slot structure is formed; refilling a second material; wherein the second material in the first region forms a plurality of isolation line structures, and the second material in the second region forms an annular dummy isolation layer; removing the oxide line structure by patterning and etching, and forming through hole structures; and forming a conductive material layer in the through hole structures.

公开(公告)号：US12080562B2

公开(公告)日：2024-09-03

申请号：US17627054

申请日：2020-09-09

Applicant: Lam Research Corporation

Inventor： Samantha Siamhwa Tan ,  Tamal Mukherjee ,  Wenbing Yang ,  Girish Dixit ,  Yang Pan

IPC: H01L21/3213 ,  H01J37/305 ,  H01J37/32 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H10N50/01

CPC classification number: H01L21/32136 ,  H01J37/3053 ,  H01J37/3244 ,  H01J37/32743 ,  H01J37/32899 ,  H01L21/02057 ,  H01L21/30621 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32135 ,  H01L21/32139 ,  H10N50/01 ,  H01J37/321 ,  H01J2237/334

Abstract: A method for selectively etching a stack with respect to a mask is provided. An atomic layer etch is provided to at least partially etch the stack, wherein the atomic layer etch forms at least some residue. An ion beam is provided to etch the stack, wherein the ion beam etch removes at least some of the residue from the atomic layer etch.

公开(公告)号：US12074059B2

公开(公告)日：2024-08-27

申请号：US18225736

申请日：2023-07-25

Applicant: Taiwan Semiconductor Manufacturing Company Limited

Inventor： Hsi-Wen Tien ,  Wei-Hao Liao ,  Pin-Ren Dai ,  Chih Wei Lu ,  Chung-Ju Lee

IPC: H01L21/768 ,  H01L23/522 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/76807 ,  H01L21/76829 ,  H01L21/76877 ,  H01L23/5226 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32139 ,  H01L2221/1031

Abstract: A semiconductor arrangement is provided. The semiconductor arrangement includes a first dielectric layer over a substrate, a metal layer over the first dielectric layer, a first conductive structure passing through the metal layer and the first dielectric layer, a second conductive structure passing through the metal layer and the first dielectric layer, and a third conductive structure coupling the first conductive structure to the second conductive structure, and overlying a first portion of the metal layer between the first conductive structure and the second conductive structure, wherein an interface exists between the metal layer and at least one of the first conductive structure or the second conductive structure.

公开(公告)号：US20240282573A1

公开(公告)日：2024-08-22

申请号：US18512923

申请日：2023-11-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaehee Jung ,  Seik Jang ,  Jaeseok Kim ,  Hyungkyu Kim ,  Seungjin Baek ,  Changsun Yeo ,  Kwangjin Yoo ,  Jinhwan Jeong ,  Hyeonjeong Jung ,  Wonchul Choi

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/40 ,  C23C16/458 ,  C23C16/50 ,  H01J37/32 ,  H01L21/3213

CPC classification number: H01L21/0228 ,  C23C16/042 ,  C23C16/402 ,  C23C16/4583 ,  C23C16/50 ,  H01J37/32449 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/32139 ,  H01J2237/332

Abstract: A method for processing a substrate including: loading a plurality of first substrates and a plurality of second substrates on which mask patterns are formed into a process chamber; supplying a first pretreatment gas into the process chamber; surface processing the plurality of first substrates using first plasma generated from the first pretreatment gas; supplying a second pretreatment gas into the process chamber; surface processing the plurality of first substrates and the plurality of second substrates using second plasma generated from the second pretreatment gas; supplying precursors to be adsorbed onto each of the plurality of first substrates and the plurality of second substrates into the process chamber; supplying a reactive gas into the process chamber; and depositing a thin film covering the mask patterns on each of the plurality of first substrates and the plurality of second substrates using third plasma generated from the reactive gas and the precursors.

公开(公告)号：US12066756B2

公开(公告)日：2024-08-20

申请号：US17876873

申请日：2022-07-29

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chi-Hung Liao ,  Yueh-Lin Yang

IPC: G03F1/24 ,  B81B3/00 ,  G01C19/5712 ,  G01P15/125 ,  G01P15/13 ,  G03F1/22 ,  G03F1/48 ,  G03F1/60 ,  G03F7/00 ,  G01P15/08 ,  H01L21/033 ,  H01L21/308 ,  H01L21/3213 ,  H01L21/683

CPC classification number: G03F1/24 ,  B81B3/0021 ,  G01C19/5712 ,  G01P15/125 ,  G01P15/131 ,  G03F1/22 ,  G03F1/48 ,  G03F1/60 ,  G03F7/70033 ,  B81B2201/025 ,  B81B2203/0181 ,  B81B2203/04 ,  B81B2207/07 ,  G01P2015/0831 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/32139 ,  H01L21/6833

Abstract: A method includes holding a mask using an electrostatic chuck. The mask includes a substrate having a first bump and a second bump separated from the first bump and a patterned layer. The first bump and the second bump face the electrostatic chuck. The substrate is between the patterned layer and the electrostatic chuck. The first bump and the second bump are spaced apart from the patterned layer. The first bump and the second bump are ring strips in a top view, and the first bump has a rectangular cross section and the second bump has a triangular cross section. The method further includes generating extreme ultraviolet (EUV) radiation using an EUV light source; and directing the EUV radiation toward the mask, such that the EUV radiation is reflected by the mask.