公开(公告)号：US11967523B2

公开(公告)日：2024-04-23

申请号：US17498190

申请日：2021-10-11

申请人： Applied Materials, Inc.

发明人： Xiangjin Xie ,  Kevin Kashefi

IPC分类号： H01L21/768 ,  H01L21/02

CPC分类号： H01L21/7685 ,  H01L21/02205 ,  H01L21/76826 ,  H01L21/76831

摘要： Methods for selectively depositing on metallic surfaces are disclosed. Some embodiments of the disclosure utilize a hydrocarbon having at least two functional groups selected from alkene, alkyne, ketone, alcohol, ester, or combinations thereof to form a self-assembled monolayer (SAM) on metallic surfaces.

公开(公告)号：US20230072614A1

公开(公告)日：2023-03-09

申请号：US17466732

申请日：2021-09-03

申请人： Applied Materials, Inc.

发明人： Ge Qu ,  Zhiyuan Wu ,  Feng Chen ,  Carmen Leal Cervantes ,  Yong Jin Kim ,  Kevin Kashefi ,  Xianmin Tang

IPC分类号： H01L21/768

摘要： Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. A self-assembled monolayer (SAM) is formed on the bottom of the gap, and a barrier layer is formed on the SAM before selectively depositing a metal liner on the barrier layer. The SAM is removed after selectively depositing the metal liner on the barrier layer.

公开(公告)号：US11380536B2

公开(公告)日：2022-07-05

申请号：US16867554

申请日：2020-05-05

申请人： Applied Materials, Inc.

发明人： Xi Cen ,  Yakuan Yao ,  Yiming Lai ,  Kai Wu ,  Avgerinos V. Gelatos ,  David T. Or ,  Kevin Kashefi ,  Yu Lei ,  Lin Dong ,  He Ren ,  Yi Xu ,  Mehul Naik ,  Hao Chen ,  Mang-Mang Ling

IPC分类号： H01L21/02 ,  H01L21/67 ,  H01L21/768

摘要： Methods for pre-cleaning substrates having metal and dielectric surfaces are described. The substrate is exposed to a strong reductant to remove contaminants from the metal surface and damage the dielectric surface. The substrate is then exposed to an oxidation process to repair the damage to the dielectric surface and oxidize the metal surface. The substrate is then exposed to a weak reductant to reduce the metal oxide to a pure metal surface without substantially affecting the dielectric surface. Processing tools and computer readable media for practicing the method are also described.

公开(公告)号：US20220181204A1

公开(公告)日：2022-06-09

申请号：US17110818

申请日：2020-12-03

申请人： Applied Materials, Inc.

发明人： Kevin Kashefi ,  Alexander Jansen ,  Mehul Naik ,  He Ren ,  Lu Chen ,  Feng Chen

IPC分类号： H01L21/768 ,  H01L21/67

摘要： Methods and apparatus for forming a reverse selective etch stop layer are disclosed. Some embodiments of the disclosure provide interconnects with lower resistance than methods which utilize non-selective (e.g., blanket) etch stop layers. Some embodiments of the disclosure utilize reverse selective etch stop layers within a subtractive etch scheme. Some embodiments of the disclosure selectively deposit the etch stop layer by passivating the surface of the metal material.

公开(公告)号：US20240339358A1

公开(公告)日：2024-10-10

申请号：US18131956

申请日：2023-04-07

申请人： Applied Materials, Inc.

发明人： Jesus Candelario Mendoza-Gutierrez ,  Aaron Dangerfield ,  Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Yang Zhou ,  Yong Jin Kim ,  Carmen Leal Cervantes ,  Ge Qu ,  Zhiyuan Wu ,  Feng Chen ,  Kevin Kashefi

IPC分类号： H01L21/768 ,  C23C16/18 ,  C23C16/455 ,  C23C16/56

CPC分类号： H01L21/76846 ,  C23C16/18 ,  C23C16/45527 ,  C23C16/56 ,  H01L21/76877

摘要： Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. The methods include selectively depositing a self-assembled monolayer (SAM) on the bottom of the gap. The SAM has a general formula I to XIX, wherein R, R′, R1, R2, R3, R4, and R5 are independently selected from hydrogen (H), alkyl, alkene, alkyne, and aryl, n is from 1 to 20, m is from 1 to 20, x is from 1 to 2, and y is from 1 to 2. A barrier layer is formed on the SAM before selectively depositing a metal liner on the barrier layer. The SAM is removed after selectively depositing the metal liner on the barrier layer.

公开(公告)号：US20240258161A1

公开(公告)日：2024-08-01

申请号：US18418812

申请日：2024-01-22

申请人： Applied Materials, Inc.

发明人： Yong Jin Kim ,  Carmen Leal Cervantes ,  Kevin Kashefi ,  Xingye Wang

IPC分类号： H01L21/768 ,  H01L23/532

CPC分类号： H01L21/76831 ,  H01L21/76826 ,  H01L21/76843 ,  H01L21/76868 ,  H01L23/53238 ,  H01L23/53266

摘要： Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. A self-assembled monolayer (SAM) is formed on the bottom of the gap which resists degradation when exposed to the ambient atmosphere. A barrier layer is selectively deposited on the sidewalls but not on the bottom of the gap. The SAM is removed after selectively depositing the barrier layer on the sidewalls.

公开(公告)号：US20230187204A1

公开(公告)日：2023-06-15

申请号：US17844189

申请日：2022-06-20

申请人： Applied Materials, Inc.

发明人： Xiaodong Wang ,  Kevin Kashefi ,  Rongjun Wang ,  Shi You ,  Keith T. Wong ,  Yuchen Liu ,  Ya-Hsi Hwang ,  Jean Lu

IPC分类号： H01L21/02 ,  H01L21/285

CPC分类号： H01L21/0234 ,  H01L21/28568

摘要： Provided are methods for pre-cleaning a substrate. A substrate having tungsten oxide (WOx) thereon is soaked in tungsten fluoride (WF6), which reduces the tungsten oxide (WOx) to tungsten (W). Subsequently, the substrate is treated with hydrogen, e.g., plasma treatment or thermal treatment, to reduce the amount of fluorine present so that fluorine does not invade the underlying insulating layer.

公开(公告)号：US12094766B2

公开(公告)日：2024-09-17

申请号：US17971212

申请日：2022-10-21

申请人： Applied Materials, Inc.

发明人： Michael L. McSwiney ,  Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Drew Phillips ,  Aaron Dangerfield ,  David Thompson ,  Kevin Kashefi ,  Xiangjin Xie

IPC分类号： H01L21/768 ,  B05D1/00 ,  H01L21/02

CPC分类号： H01L21/76829 ,  B05D1/60 ,  H01L21/02118 ,  H01L21/02205 ,  H01L21/76846 ,  H01L21/76877

摘要： Methods for selectively depositing on metallic surfaces are disclosed. Some embodiments of the disclosure utilize a hydrocarbon having at least two functional groups selected from alkene, alkyne, ketone, hydroxyl, aldehyde, or combinations thereof to form a self-assembled monolayer (SAM) on metallic surfaces.

公开(公告)号：US20240297073A1

公开(公告)日：2024-09-05

申请号：US18117203

申请日：2023-03-03

申请人： Applied Materials, Inc.

发明人： Muthukumar Kaliappan ,  Bhaskar Jyoti Bhuyan ,  Yong Jin Kim ,  Carmen Leal Cervantes ,  Xiangjin Xie ,  Jesus Candelario Mendoza-Gutierrez ,  Aaron Dangerfield ,  Michael Haverty ,  Mark Saly ,  Kevin Kashefi

IPC分类号： H01L21/768

CPC分类号： H01L21/76843 ,  H01L21/76831 ,  H01L21/76877

摘要： Methods of forming semiconductor devices by enhancing selective deposition are described. In some embodiments, a blocking layer is deposited on a metal surface before deposition of a barrier layer. The methods include exposing a substrate with a metal surface, a dielectric surface and an aluminum oxide surface or an aluminum nitride surface to a blocking molecule to form the blocking layer selectively on the metal surface over the dielectric surface and one of the aluminum oxide surface or the aluminum nitride surface.

公开(公告)号：US11848229B2

公开(公告)日：2023-12-19

申请号：US17971217

申请日：2022-10-21

申请人： Applied Materials, Inc.

发明人： Michael L. McSwiney ,  Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Drew Phillips ,  Aaron Dangerfield ,  David Thompson ,  Kevin Kashefi ,  Xiangjin Xie

IPC分类号： H01L21/768 ,  B05D1/00 ,  H01L21/02

CPC分类号： H01L21/76829 ,  B05D1/60 ,  H01L21/02118 ,  H01L21/02205 ,  H01L21/76846 ,  H01L21/76877

摘要： Methods for selectively depositing on metallic surfaces are disclosed. Some embodiments of the disclosure utilize a hydrocarbon having at least two functional groups, at least one functional group selected from amino groups, hydroxyl groups, ether linkages or combinations thereof to form a self-assembled monolayer (SAM) on metallic surfaces.