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    MAGNETIC MEMORY AND METHOD OF FABRICATION
    3.
    发明申请
    MAGNETIC MEMORY AND METHOD OF FABRICATION 有权

    公开(公告)号：US20210234091A1

    公开(公告)日：2021-07-29

    申请号：US16752013

    申请日：2020-01-24

    Applicant: APPLIED Materials, Inc.

    Inventor： Jong Mun Kim ,  Mang-Mang Ling ,  Soham Asrani ,  Lin Xue ,  Chentsau Chris Ying ,  Srinivas D. Nemani ,  Ellie Y. Yieh

    IPC: H01L43/12 ,  H01L43/10

    Abstract: A method of etching a layer stack. The method may include providing a substrate in a process chamber, the substrate comprising an array of patterned features, arranged within a layer stack, the layer stack including at least one metal layer, and directing an ion beam to the substrate from an ion source, wherein the ion beam causes a physical sputtering of the at least one metal layer. The method may include directing a neutral reactive gas directly to the substrate, separately from the ion source, wherein the neutral reactive gas reacts with metallic species generated by the physical sputtering of the at least one metal layer.

    Methods for forming features in a material layer utilizing a combination of a main etching and a cyclical etching process
    4.
    发明授权
    Methods for forming features in a material layer utilizing a combination of a main etching and a cyclical etching process 有权
    利用主蚀刻和循环蚀刻工艺的组合在材料层中形成特征的方法

    公开(公告)号：US09543163B2

    公开(公告)日：2017-01-10

    申请号：US14059416

    申请日：2013-10-21

    Applicant: Applied Materials, Inc.

    Inventor： Mang-Mang Ling ,  Jungmin Ko ,  Sean S. Kang ,  Jeremiah T. Pender ,  Srinivas D. Nemani ,  Bradley Howard

    IPC: H01L21/302 ,  H01L21/311 ,  H01L21/768

    CPC classification number: H01L21/31116 ,  H01J2237/334 ,  H01L21/76802

    Abstract: Methods for etching a material layer disposed on the substrate using a combination of a main etching step and a cyclical etching process are provided. The method includes performing a main etching process in a processing chamber to an oxide layer, forming a feature with a first predetermined depth in the oxide layer, performing a treatment process on the substrate by supplying a treatment gas mixture into the processing chamber to treat the etched feature in the oxide layer, performing a chemical etching process on the substrate by supplying a chemical etching gas mixture into the processing chamber, wherein the chemical etching gas includes at least an ammonium gas and a nitrogen trifluoride, wherein the chemical etching process further etches the feature to a second predetermined depth, and performing a transition process on the etched substrate by supplying a transition gas mixture into the processing chamber.

    Abstract translation: 提供了使用主蚀刻步骤和循环蚀刻工艺的组合蚀刻设置在基板上的材料层的方法。 该方法包括在处理室中对氧化物层进行主蚀刻处理，在氧化物层中形成具有第一预定深度的特征，通过将处理气体混合物供应到处理室中来对衬底进行处理，以处理 在所述氧化物层中蚀刻特征，通过向所述处理室中提供化学蚀刻气体混合物，在所述基板上进行化学蚀刻处理，其中所述化学蚀刻气体至少包含铵气体和三氟化氮，其中所述化学蚀刻工艺进一步蚀刻 将特征提供到第二预定深度，并且通过将过渡气体混合物供应到处理室中来对蚀刻的基板执行转变处理。

    NON-HALOGEN ETCHING OF SILICON-CONTAINING MATERIALS
    6.
    发明申请
    NON-HALOGEN ETCHING OF SILICON-CONTAINING MATERIALS 审中-公开

    公开(公告)号：US20190019690A1

    公开(公告)日：2019-01-17

    申请号：US15651607

    申请日：2017-07-17

    Applicant: Applied Materials, Inc.

    Inventor： Tom Choi ,  Mandar B. Pandit ,  Mang-Mang Ling ,  Nitin K. Ingle

    IPC: H01L21/3213 ,  H01L29/66 ,  H01L21/3205

    CPC classification number: H01L21/32137 ,  H01L21/3065 ,  H01L21/32055 ,  H01L21/32138 ,  H01L29/66545 ,  H01L29/66795

    Abstract: Processing methods may be performed to limit damage of features of a substrate, such as missing fin damage. The methods may include forming a plasma of an inert precursor within a processing region of a processing chamber. Effluents of the plasma of the inert precursor may be utilized to passivate an exposed region of an oxygen-containing material that extends about a feature formed on a semiconductor substrate. A plasma of a hydrogen-containing precursor may also be formed within the processing region. Effluents of the plasma of the hydrogen-containing precursor may be directed, with DC bias, towards an exposed silicon-containing material on the semiconductor substrate. The methods may also include anisotropically etching the exposed silicon-containing material with the plasma effluents of the hydrogen-containing precursor, where the plasma effluents of the hydrogen-containing precursor selectively etch silicon relative to silicon oxide.

    Methods for etching materials used in MRAM applications
    7.
    发明授权
    Methods for etching materials used in MRAM applications 有权
    在MRAM应用中使用的蚀刻材料的方法

    公开(公告)号：US09059398B2

    公开(公告)日：2015-06-16

    申请号：US13750892

    申请日：2013-01-25

    Applicant: Applied Materials, Inc.

    Inventor： Jisoo Kim ,  Mang-Mang Ling ,  Khoi Doan ,  Chi Hong Ching ,  Srinivas D. Nemani

    IPC: H01L43/12 ,  H01L43/08 ,  H01L27/22 ,  G11C11/16

    CPC classification number: H01L43/12 ,  G11C11/16 ,  G11C11/161 ,  H01L27/222 ,  H01L43/08

    Abstract: Embodiments of the invention provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate in magnetoresistive random access memory applications. In one embodiment, a method of forming a MTJ structure on a substrate includes providing a substrate having a insulating tunneling layer disposed between a first and a second ferromagnetic layer disposed on the substrate, wherein the first ferromagnetic layer is disposed on the substrate followed by the insulating tunneling layer and the second ferromagnetic layer sequentially, supplying an ion implantation gas mixture to implant ions into the first ferromagnetic layer exposed by openings defined by the second ferromagnetic layer, and etching the implanted first ferromagnetic layer.

    Abstract translation: 本发明的实施例提供了用于在磁阻随机存取存储器应用中在衬底上制造磁性隧道结（MTJ）结构的方法和装置。 在一个实施例中，在衬底上形成MTJ结构的方法包括提供衬底，其具有设置在设置在衬底上的第一和第二铁磁层之间的绝缘隧道层，其中第一铁磁层设置在衬底上， 绝缘隧道层和第二铁磁层，提供离子注入气体混合物以将离子注入到由第二铁磁层限定的开口暴露的第一铁磁层中，并蚀刻所注入的第一铁磁层。

    Method of etching copper indium gallium selenide (CIGS) material
    9.
    发明授权
    Method of etching copper indium gallium selenide (CIGS) material 有权

    公开(公告)号：US10957548B2

    公开(公告)日：2021-03-23

    申请号：US16683828

    申请日：2019-11-14

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Mang-Mang Ling ,  Jong Mun Kim ,  Chentsau Ying

    IPC: H01L21/308 ,  H01L21/3065 ,  C09K13/10 ,  C01B19/00 ,  H01L21/67

    Abstract: Methods for dry plasma etching thin layers of material including Cu(In, Ga)Se, e.g., CIGS material on semiconductor substrates are provided. A method of etching a CIGS material layer such as copper indium gallium selenide film, includes: flowing an etching gas including a mixture of gases into a process chamber having a substrate disposed therein, the substrate including a copper indium gallium selenide layer having a patterned film stack disposed thereon, the patterned film stack covering a first portion of the copper indium gallium selenide layer and exposing a second portion of the copper indium gallium selenide layer; and contacting the copper indium gallium selenide layer with the etching gas to remove the second portion and form one or more copper indium gallium selenide edges of the first portion.

    ATOMIC LAYER ETCHING PROCESSES
    10.
    发明申请
    ATOMIC LAYER ETCHING PROCESSES 审中-公开

    公开(公告)号：US20190122902A1

    公开(公告)日：2019-04-25

    申请号：US15792252

    申请日：2017-10-24

    Applicant: Applied Materials, Inc.

    Inventor： Jungmin Ko ,  Tom Choi ,  Junghoon Kim ,  Sean Kang ,  Mang-Mang Ling

    IPC: H01L21/67 ,  H01J37/32

    CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32899 ,  H01J2237/334 ,  H01J2237/3341 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/67069 ,  H01L21/68742

    Abstract: Processing methods may be performed to remove unwanted materials from a substrate. The methods may include forming a remote plasma of an inert precursor in a remote plasma region of a processing chamber. The methods may include forming a bias plasma of the inert precursor within a processing region of the processing chamber. The methods may include modifying a surface of an exposed material on a semiconductor substrate within the processing region of the processing chamber with plasma effluents of the inert precursor. The methods may include extinguishing the bias plasma while maintaining the remote plasma. The methods may include adding an etchant precursor to the remote plasma region to produce etchant plasma effluents. The methods may include flowing the etchant plasma effluents to the processing region of the processing chamber. The methods may also include removing the modified surface of the exposed material from the semiconductor substrate.

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