公开(公告)号：US12113020B2

公开(公告)日：2024-10-08

申请号：US17184020

申请日：2021-02-24

申请人： Applied Materials, Inc.

发明人： Ryan Scott Smith ,  Kai Wu ,  Nicolas Louis Gabriel Breil

IPC分类号： H01L23/532 ,  H01L21/02 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528

CPC分类号： H01L23/53266 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02266 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76871 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/53238

摘要： Exemplary semiconductor processing methods include forming a via in a semiconductor structure. The via may be defined in part by a bottom surface and a sidewall surface formed in the semiconductor structure around the via. The methods may also include depositing a tantalum nitride (TaN) layer on the bottom surface of the via. In embodiments, the TaN layer may be deposited at a temperature less than or about 200° C. The methods may still further include depositing a titanium nitride (TiN) layer on the TaN layer. In embodiments, the TiN layer may be deposited at a temperature greater than or about 300° C. The methods may additionally include depositing a fill-metal on the TiN layer in the via. In embodiments, the metal may be deposited at a temperature greater than or about 300° C.

公开(公告)号：US12014956B2

公开(公告)日：2024-06-18

申请号：US17488275

申请日：2021-09-28

申请人： Applied Materials, Inc.

发明人： Xi Cen ,  Kai Wu

IPC分类号： H01L21/768 ,  C23C16/08 ,  C23C16/52 ,  H01L23/532

CPC分类号： H01L21/76877 ,  C23C16/08 ,  C23C16/52 ,  H01L21/76843 ,  H01L21/76876 ,  H01L23/53266

摘要： Some embodiments of the disclosure relate to methods for forming a bottom-up tungsten gapfill. Some embodiments of the disclosure relate to methods for reducing the deposition rate of tungsten by chemical vapor deposition. A molybdenum halide precursor is added to a tungsten halide precursor and a reductant. The co-flow of tungsten halide and molybdenum halide demonstrates either reduced or eliminated tungsten growth.

公开(公告)号：US11859277B2

公开(公告)日：2024-01-02

申请号：US17327118

申请日：2021-05-21

申请人： Applied Materials, Inc.

发明人： Xi Cen ,  Kai Wu ,  Seshadri Ganguli ,  Xinming Zhang ,  Norman L. Tam ,  Abhilash Mayur

IPC分类号： C23C16/06 ,  C23C16/14

CPC分类号： C23C16/14

摘要： Methods of depositing a metal film are discussed. A metal film is formed on the bottom of feature having a metal bottom and dielectric sidewalls. Formation of the metal film comprises exposure to a metal precursor and an alkyl halide catalyst while the substrate is maintained at a deposition temperature. The metal precursor has a decomposition temperature above the deposition temperature. The alkyl halide comprises carbon and halogen, and the halogen comprises bromine or iodine.

公开(公告)号：US20220372617A1

公开(公告)日：2022-11-24

申请号：US17327118

申请日：2021-05-21

申请人： Applied Materials, Inc.

发明人： Xi Cen ,  Kai Wu ,  Seshadri Ganguli ,  Xinming Zhang ,  Norman L. Tam ,  Abhilash Mayur

IPC分类号： C23C16/14

摘要： Methods of depositing a metal film are discussed. A metal film is formed on the bottom of feature having a metal bottom and dielectric sidewalls. Formation of the metal film comprises exposure to a metal precursor and an alkyl halide catalyst while the substrate is maintained at a deposition temperature. The metal precursor has a decomposition temperature above the deposition temperature. The alkyl halide comprises carbon and halogen, and the halogen comprises bromine or iodine.

公开(公告)号：US20210285102A1

公开(公告)日：2021-09-16

申请号：US17198576

申请日：2021-03-11

申请人： Applied Materials, Inc.

发明人： Byunghoon Yoon ,  Liqi Wu ,  Joung Joo Lee ,  Kai Wu ,  Xi Cen ,  Wei Lei ,  Sang Ho Yu ,  Seshadri Ganguli

IPC分类号： C23C16/455 ,  C23C16/02 ,  C23C28/02

摘要： Methods of depositing a metal film are discussed. A metal film is formed on the bottom of feature having a metal bottom and dielectric sidewalls. Formation of the metal film comprises exposure to a metal precursor and an alkyl halide catalyst while the substrate is maintained at a deposition temperature. The metal precursor has a decomposition temperature above the deposition temperature. The alkyl halide comprises carbon and halogen, and the halogen comprises bromine or iodine.

公开(公告)号：US10395916B2

公开(公告)日：2019-08-27

申请号：US15699110

申请日：2017-09-08

申请人： Applied Materials, Inc.

发明人： Kai Wu ,  Vikash Banthia ,  Sang Ho Yu ,  Mei Chang ,  Feiyue Ma

IPC分类号： H01L21/02 ,  H01L21/285 ,  H01L23/532 ,  H01L21/768

摘要： Methods to selectively deposit a film on a first surface (e.g., a metal surface) relative to a second surface (e.g., a dielectric surface) by exposing the surface to a pre-clean plasma comprising one or more of argon or hydrogen followed by deposition. The first surface and the second surface can be substantially coplanar. The selectivity of the deposited film may be increased by an order of magnitude relative to the substrate before exposure to the pre-cleaning plasma.

公开(公告)号：US09748105B2

公开(公告)日：2017-08-29

申请号：US14337908

申请日：2014-07-22

申请人： Applied Materials, Inc.

发明人： Kai Wu ,  Sang Ho Yu

IPC分类号： H01L21/285 ,  H01L21/768 ,  H01L21/321 ,  C23C16/14 ,  C23C16/04 ,  H01L21/3213

CPC分类号： H01L21/28556 ,  C23C16/045 ,  C23C16/14 ,  H01L21/32136 ,  H01L21/76877

摘要： Implementations described herein generally relate to methods for forming tungsten materials on substrates using vapor deposition processes. The method comprises positioning a substrate having a feature formed therein in a substrate processing chamber, depositing a first film of a bulk tungsten layer by introducing a continuous flow of a hydrogen containing gas and a tungsten halide compound to the processing chamber to deposit the first tungsten film over the feature, etching the first film of the bulk tungsten layer using a plasma treatment to remove a portion of the first film by exposing the first film to a continuous flow of the tungsten halide compound and an activated treatment gas and depositing a second film of the bulk tungsten layer by introducing a continuous flow of the hydrogen containing gas and the tungsten halide compound to the processing chamber to deposit the second tungsten film over the first tungsten film.

公开(公告)号：US12094773B2

公开(公告)日：2024-09-17

申请号：US17857341

申请日：2022-07-05

申请人： Applied Materials, Inc.

发明人： Xi Cen ,  Kai Wu ,  Min Heon ,  Wei Min Chan ,  Tom Ho Wing Yu ,  Peiqi Wang ,  Ju Ik Kang ,  Feihu Wang ,  Nobuyuki Sasaki ,  Chunming Zhou

IPC分类号： H01L21/768 ,  C23C16/04 ,  H01L21/02

CPC分类号： H01L21/76879 ,  C23C16/045 ,  H01L21/0262

摘要： Method for forming tungsten gap fill on a structure, including high aspect ratio structures includes depositing a tungsten liner in the structure using a physical vapor deposition (PVD) process with high ionization and an ambient gas of argon or krypton. The PVD process is performed at a temperature of approximately 20 degrees Celsius to approximately 300 degrees Celsius. The method further includes treating the structure with a nitridation process and depositing bulk fill tungsten into the structure using a chemical vapor deposition (CVD) process to form a seam suppressed boron free tungsten fill. The CVD process is performed at a temperature of approximately 300 degrees Celsius to approximately 500 degrees Celsius and at a pressure of approximately 5 Torr to approximately 300 Torr.

公开(公告)号：US11939668B2

公开(公告)日：2024-03-26

申请号：US17729943

申请日：2022-04-26

申请人： Applied Materials, Inc.

发明人： Zubin Huang ,  Mohammed Jaheer Sherfudeen ,  David Matthew Santi ,  Jallepally Ravi ,  Peiqi Wang ,  Kai Wu

IPC分类号： C23C16/06 ,  C23C16/08 ,  C23C16/455 ,  C23C16/458

CPC分类号： C23C16/08 ,  C23C16/45523 ,  C23C16/458

摘要： A method of forming a tungsten-containing layer over a substrate includes a) positioning a substrate on a substrate support in a process volume of a process chamber; b) providing a precursor gas to the process volume of the process chamber for a first duration; and c) providing a tungsten-containing gas to the process volume of the process chamber by opening a pulsing valve on a tungsten-containing gas delivery line for a second duration occurring after the first duration to form a tungsten-containing layer on the substrate. The tungsten-containing gas delivery line includes a first section connected to an inlet of the pulsing valve and a second section connected to an outlet of the pulsing valve, the first section connects the inlet of the pulsing valve to a reservoir of tungsten-containing gas, the second section connects the outlet of the pulsing valve to an inlet of the process chamber.

公开(公告)号：US11380536B2

公开(公告)日：2022-07-05

申请号：US16867554

申请日：2020-05-05

申请人： Applied Materials, Inc.

发明人： Xi Cen ,  Yakuan Yao ,  Yiming Lai ,  Kai Wu ,  Avgerinos V. Gelatos ,  David T. Or ,  Kevin Kashefi ,  Yu Lei ,  Lin Dong ,  He Ren ,  Yi Xu ,  Mehul Naik ,  Hao Chen ,  Mang-Mang Ling

IPC分类号： H01L21/02 ,  H01L21/67 ,  H01L21/768

摘要： Methods for pre-cleaning substrates having metal and dielectric surfaces are described. The substrate is exposed to a strong reductant to remove contaminants from the metal surface and damage the dielectric surface. The substrate is then exposed to an oxidation process to repair the damage to the dielectric surface and oxidize the metal surface. The substrate is then exposed to a weak reductant to reduce the metal oxide to a pure metal surface without substantially affecting the dielectric surface. Processing tools and computer readable media for practicing the method are also described.