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公开(公告)号:US12022650B2
公开(公告)日:2024-06-25
申请号:US18149226
申请日:2023-01-03
发明人: Yixiong Yang , Jacqueline S. Wrench , Yong Yang , Srinivas Gandikota , Annamalai Lakshmanan , Joung Joo Lee , Feihu Wang , Seshadri Ganguli
IPC分类号: H10B12/00 , C23C16/455 , H01L21/02 , H01L21/285 , H01L21/8234
CPC分类号: H10B12/488 , C23C16/45553 , H01L21/02491 , H01L21/02631 , H01L21/2855 , H01L21/28556 , H01L21/28568 , H01L21/823431 , H01L21/823475
摘要: Methods for DRAM device with a buried word line are described. The method includes forming a metal cap layer and a molybdenum conductor layer in a feature on a substrate. The method includes depositing the metal cap layer on the substrate by physical vapor deposition (PVD) and depositing the molybdenum conductor layer by atomic layer deposition (ALD) on the metal cap layer.
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公开(公告)号:US11587936B2
公开(公告)日:2023-02-21
申请号:US17335287
申请日:2021-06-01
发明人: Yixiong Yang , Jacqueline S. Wrench , Yong Yang , Srinivas Gandikota , Annamalai Lakshmanan , Joung Joo Lee , Feihu Wang , Seshadri Ganguli
IPC分类号: H01L27/108 , H01L21/285 , C23C16/455 , H01L21/02 , H01L21/8234
摘要: Methods for DRAM device with a buried word line are described. The method includes forming a metal cap layer and a molybdenum conductor layer in a feature on a substrate. The method includes depositing the metal cap layer on the substrate by physical vapor deposition (PVD) and depositing the molybdenum conductor layer by atomic layer deposition (ALD) on the metal cap layer.
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公开(公告)号:US20230141748A1
公开(公告)日:2023-05-11
申请号:US18149226
申请日:2023-01-03
发明人: Yixiong Yang , Jacqueline S. Wrench , Yong Yang , Srinivas Gandikota , Annamalai Lakshmanan , Joung Joo Lee , Feihu Wang , Seshadri Ganguli
IPC分类号: H10B12/00 , H01L21/285 , C23C16/455 , H01L21/02
CPC分类号: H01L27/10891 , H01L21/28568 , H01L21/28556 , H01L21/2855 , C23C16/45553 , H01L21/02491 , H01L21/02631 , H01L21/823431
摘要: Methods for DRAM device with a buried word line are described. The method includes forming a metal cap layer and a molybdenum conductor layer in a feature on a substrate. The method includes depositing the metal cap layer on the substrate by physical vapor deposition (PVD) and depositing the molybdenum conductor layer by atomic layer deposition (ALD) on the metal cap layer.
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公开(公告)号:US12094773B2
公开(公告)日:2024-09-17
申请号:US17857341
申请日:2022-07-05
发明人: Xi Cen , Kai Wu , Min Heon , Wei Min Chan , Tom Ho Wing Yu , Peiqi Wang , Ju Ik Kang , Feihu Wang , Nobuyuki Sasaki , Chunming Zhou
IPC分类号: H01L21/768 , C23C16/04 , H01L21/02
CPC分类号: H01L21/76879 , C23C16/045 , H01L21/0262
摘要: Method for forming tungsten gap fill on a structure, including high aspect ratio structures includes depositing a tungsten liner in the structure using a physical vapor deposition (PVD) process with high ionization and an ambient gas of argon or krypton. The PVD process is performed at a temperature of approximately 20 degrees Celsius to approximately 300 degrees Celsius. The method further includes treating the structure with a nitridation process and depositing bulk fill tungsten into the structure using a chemical vapor deposition (CVD) process to form a seam suppressed boron free tungsten fill. The CVD process is performed at a temperature of approximately 300 degrees Celsius to approximately 500 degrees Celsius and at a pressure of approximately 5 Torr to approximately 300 Torr.
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公开(公告)号:US12104243B2
公开(公告)日:2024-10-01
申请号:US17348849
申请日:2021-06-16
发明人: Annamalai Lakshmanan , Jacqueline S. Wrench , Feihu Wang , Yixiong Yang , Joung Joo Lee , Srinivas Gandikota , Sang-heum Kim , Zhebo Chen , Gang Shen
IPC分类号: C23C14/02 , C23C14/06 , C23C14/16 , C23C14/58 , C23C16/02 , C23C16/06 , C23C16/42 , C23C16/455 , C23C16/52 , C23C16/56
CPC分类号: C23C16/0281 , C23C14/021 , C23C14/025 , C23C14/0682 , C23C14/16 , C23C14/5886 , C23C16/0227 , C23C16/06 , C23C16/42 , C23C16/45527 , C23C16/52 , C23C16/56
摘要: Methods and apparatus for processing a substrate is provided herein. For example, a method for processing a substrate comprises depositing a silicide layer within a feature defined in a layer on a substrate, forming one of a metal liner layer or a metal seed layer atop the silicide layer within the feature via depositing at least one of molybdenum (Mo) or tungsten (W) using physical vapor deposition, and depositing Mo using at least one of chemical vapor deposition or atomic layer deposition atop the at least one of the metal liner layer or the metal seed layer, without vacuum break.
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公开(公告)号:US11798845B2
公开(公告)日:2023-10-24
申请号:US17082602
申请日:2020-10-28
发明人: Xi Cen , Kai Wu , Min Heon , Wei Min Chan , Tom Ho Wing Yu , Peiqi Wang , Ju Ik Kang , Feihu Wang , Nobuyuki Sasaki , Chunming Zhou
IPC分类号: H01L21/768 , H01L21/02 , C23C16/04
CPC分类号: H01L21/76879 , C23C16/045 , H01L21/0262
摘要: Method for forming tungsten gap fill on a structure, including high aspect ratio structures includes depositing a tungsten liner in the structure using a physical vapor deposition (PVD) process with high ionization and an ambient gas of argon or krypton. The PVD process is performed at a temperature of approximately 20 degrees Celsius to approximately 300 degrees Celsius. The method further includes treating the structure with a nitridation process and depositing bulk fill tungsten into the structure using a chemical vapor deposition (CVD) process to form a seam suppressed boron free tungsten fill. The CVD process is performed at a temperature of approximately 300 degrees Celsius to approximately 500 degrees Celsius and at a pressure of approximately 5 Torr to approximately 300 Torr.
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公开(公告)号:US20220278108A1
公开(公告)日:2022-09-01
申请号:US17335287
申请日:2021-06-01
发明人: Yixiong Yang , Jacqueline S. Wrench , Yong Yang , Srinivas Gandikota , Annamalai Lakshmanan , Joung Joo Lee , Feihu Wang , Seshadri Ganguli
IPC分类号: H01L27/108 , H01L21/285
摘要: Methods for DRAM device with a buried word line are described. The method includes forming a metal cap layer and a molybdenum conductor layer in a feature on a substrate. The method includes depositing the metal cap layer on the substrate by physical vapor deposition (PVD) and depositing the molybdenum conductor layer by atomic layer deposition (ALD) on the metal cap layer.
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公开(公告)号:US20220277961A1
公开(公告)日:2022-09-01
申请号:US17335241
申请日:2021-06-01
发明人: Annamalai Lakshmanan , Jacqueline S. Wrench , Feihu Wang , Yixiong Yang , Joung Joo Lee , Srinivas Gandikota
IPC分类号: H01L21/285 , H01L21/02 , C23C16/455
摘要: Methods for depositing a metal contact stack on a substrate are described. The method stack includes a metal cap layer and a molybdenum conductor layer. The method includes depositing the metal cap layer on the substrate by physical vapor deposition (PVD) and depositing the molybdenum conductor layer by atomic layer deposition (ALD) on the metal cap layer.
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公开(公告)号:US20220068709A1
公开(公告)日:2022-03-03
申请号:US17002220
申请日:2020-08-25
发明人: Feihu Wang , Joung Joo Lee , Xi Cen , Zhibo Yuan , Wei Lei , Kai Wu , Chunming Zhou , Zhebo Chen
IPC分类号: H01L21/768 , H01L23/532
摘要: Apparatus and methods to provide electronic devices comprising tungsten film stacks are provided. A tungsten liner formed by physical vapor deposition is filled with a tungsten film formed by chemical vapor deposition directly over the tungsten liner.
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