公开(公告)号：US12094773B2

公开(公告)日：2024-09-17

申请号：US17857341

申请日：2022-07-05

Applicant: Applied Materials, Inc.

Inventor： Xi Cen ,  Kai Wu ,  Min Heon ,  Wei Min Chan ,  Tom Ho Wing Yu ,  Peiqi Wang ,  Ju Ik Kang ,  Feihu Wang ,  Nobuyuki Sasaki ,  Chunming Zhou

IPC: H01L21/768 ,  C23C16/04 ,  H01L21/02

CPC classification number: H01L21/76879 ,  C23C16/045 ,  H01L21/0262

Abstract: Method for forming tungsten gap fill on a structure, including high aspect ratio structures includes depositing a tungsten liner in the structure using a physical vapor deposition (PVD) process with high ionization and an ambient gas of argon or krypton. The PVD process is performed at a temperature of approximately 20 degrees Celsius to approximately 300 degrees Celsius. The method further includes treating the structure with a nitridation process and depositing bulk fill tungsten into the structure using a chemical vapor deposition (CVD) process to form a seam suppressed boron free tungsten fill. The CVD process is performed at a temperature of approximately 300 degrees Celsius to approximately 500 degrees Celsius and at a pressure of approximately 5 Torr to approximately 300 Torr.

公开(公告)号：US11798845B2

公开(公告)日：2023-10-24

申请号：US17082602

申请日：2020-10-28

Applicant: Applied Materials, Inc.

Inventor： Xi Cen ,  Kai Wu ,  Min Heon ,  Wei Min Chan ,  Tom Ho Wing Yu ,  Peiqi Wang ,  Ju Ik Kang ,  Feihu Wang ,  Nobuyuki Sasaki ,  Chunming Zhou

IPC: H01L21/768 ,  H01L21/02 ,  C23C16/04

CPC classification number: H01L21/76879 ,  C23C16/045 ,  H01L21/0262

Abstract: Method for forming tungsten gap fill on a structure, including high aspect ratio structures includes depositing a tungsten liner in the structure using a physical vapor deposition (PVD) process with high ionization and an ambient gas of argon or krypton. The PVD process is performed at a temperature of approximately 20 degrees Celsius to approximately 300 degrees Celsius. The method further includes treating the structure with a nitridation process and depositing bulk fill tungsten into the structure using a chemical vapor deposition (CVD) process to form a seam suppressed boron free tungsten fill. The CVD process is performed at a temperature of approximately 300 degrees Celsius to approximately 500 degrees Celsius and at a pressure of approximately 5 Torr to approximately 300 Torr.