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公开(公告)号：US20240337022A1
公开(公告)日：2024-10-10
申请号：US18624402
申请日：2024-04-02
发明人： Kensaku NARUSHIMA , Takashi KOBAYASHI , Shinya OKABE , Takashi SAKUMA , Kunihiro TADA , Satoshi YOSHIDA
IPC分类号： C23C16/509 , C23C16/14 , C23C16/44 , C23C16/455 , C23C16/46
CPC分类号： C23C16/509 , C23C16/14 , C23C16/4405 , C23C16/4408 , C23C16/45512 , C23C16/46
摘要： A film forming apparatus, including a processing container, an interior of which is configured to be depressurized, an electrode configured to generate an electric field in a processing space inside the processing container, a radio frequency power supply configured to supply radio frequency power to the electrode, a stage arranged in the processing container to place a substrate thereon, and a film forming gas introduction part configured to introduce vaporized zirconium chloride into the processing space. The film forming gas introduction part is made of a metal and is grounded.
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公开(公告)号：US20240258109A1
公开(公告)日：2024-08-01
申请号：US18532381
申请日：2023-12-07
发明人： Xi CEN , Kai WU , Min-Han LEE , Yang LI , Cheng CHENG , Zhixiu LIANG
IPC分类号： H01L21/285 , C23C16/02 , C23C16/14 , C23C16/34
CPC分类号： H01L21/28568 , C23C16/0272 , C23C16/14 , C23C16/34
摘要： A method of forming a structure on a substrate includes forming an adhesion layer on a substrate. The method further includes forming a tungsten containing layer in-situ with the adhesion layer. The tungsten containing layer is formed by a one-time soak process including soaking the substrate once, and only once, in a first gas, purging the first gas, and soaking the substrate once, and only once, in a second gas. The method further includes removing the tungsten containing layer from the adhesion layer.
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公开(公告)号：US20240200188A1
公开(公告)日：2024-06-20
申请号：US18590141
申请日：2024-02-28
发明人： Feng Q. Liu , Hua Chung , Schubert Chu , Mei Chang , Jeffrey W. Anthis , David Thompson
IPC分类号： C23C16/42 , C23C16/14 , C23C16/455 , C23C16/507 , C23C16/513 , C23C16/52
CPC分类号： C23C16/42 , C23C16/14 , C23C16/45536 , C23C16/45542 , C23C16/507 , C23C16/513 , C23C16/52
摘要： Processing methods for forming iridium-containing films at low temperatures are described. The methods comprise exposing a substrate to iridium hexafluoride and a reactant to form iridium metal or iridium silicide films. Methods for enhancing selectivity and tuning the silicon content of some films are also described.
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公开(公告)号：US20240136192A1
公开(公告)日：2024-04-25
申请号：US18547481
申请日：2022-02-18
发明人： Lawrence Schloss , Joshua Collins , Griffin John Kennedy , Hanna Bamnolker , Sang-Hyeob Lee , Patrick van Cleemput , Sanjay Gopinath
IPC分类号： H01L21/285 , C23C16/02 , C23C16/14 , C23C16/455 , C23C16/46 , C23C16/52
CPC分类号： H01L21/28568 , C23C16/02 , C23C16/14 , C23C16/45527 , C23C16/45544 , C23C16/46 , C23C16/52
摘要： Provided herein are low resistance metallization stack structures for 3D-NAND applications and related methods of fabrication. In some embodiments, thin metal oxynitride nucleation layers are deposited on dielectric material followed by deposition of a pure metal conductor using process conditions that increase non-molybdenum component element content at the oxynitride-dielectric interface. Certain embodiments of the methods described below convert less than all of the metal oxynitride nucleation layer to a pure metal layer, further lowering the resistivity.
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公开(公告)号：US20240133028A1
公开(公告)日：2024-04-25
申请号：US18277695
申请日：2022-02-08
申请人： AVENI
CPC分类号： C23C16/4414 , C23C16/045 , C23C16/14
摘要： The present invention relates to a method for fabricating cobalt interconnects and an electrolyte enabling it to be implemented. The electrolyte of pH less than 4.0 comprises cobalt ions, chloride ions and organic additives, including an alpha-hydroxy carboxylic acid and an amine chosen from polyethyleneimine or benzotriazole.
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公开(公告)号：US11901420B2
公开(公告)日：2024-02-13
申请号：US17383394
申请日：2021-07-22
发明人： En-Tsung Cho , Yuming Xia , Wei Li
IPC分类号： G02F1/1343 , G02F1/1368 , H01L29/40 , C23C14/14 , C23C14/35 , C23C14/58 , C23C16/14 , C23C16/16 , C23C16/455 , C23C16/56 , C23C28/02 , H01L27/12 , H01L29/423 , H01L29/49
CPC分类号： H01L29/401 , C23C14/14 , C23C14/35 , C23C14/5873 , C23C16/14 , C23C16/16 , C23C16/45527 , C23C16/45553 , C23C16/56 , C23C28/023 , H01L27/1214 , H01L29/42384 , H01L29/4908 , G02F1/1368 , G02F1/13439
摘要： The present application discloses a manufacturing method for a gate electrode and a thin film transistor, and a display panel, including: depositing an aluminum film on a substratum by physical vapor deposition; depositing a molybdenum film over the aluminum film by atomic layer deposition; and etching the aluminum film and the molybdenum film to form the gate electrode of a predetermined pattern.
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公开(公告)号：US20240047215A1
公开(公告)日：2024-02-08
申请号：US18379515
申请日：2023-10-12
IPC分类号： H01L21/285 , C23C16/44 , C23C16/455 , C23C16/14
CPC分类号： H01L21/28556 , C23C16/4408 , C23C16/45553 , C23C16/14
摘要： Methods for depositing molybdenum films on a substrate are described. The substrate is exposed to a molybdenum halide precursor and an aluminum precursor to form the molybdenum film (e.g., elemental molybdenum) at a low temperature. The exposures can be sequential or simultaneous.
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公开(公告)号：US11887855B2
公开(公告)日：2024-01-30
申请号：US17223506
申请日：2021-04-06
发明人： Xinyu Fu , Srinivas Gandikota , Avgerinos V. Gelatos , Atif Noori , Mei Chang , David Thompson , Steve G. Ghanayem
IPC分类号： H01L21/285 , H01L21/768 , C23C16/14 , C23C16/455 , H01L21/28 , C23C16/06 , H01L21/3205 , C23C16/02 , C23C16/34 , C23C16/42
CPC分类号： H01L21/28562 , C23C16/0272 , C23C16/06 , C23C16/14 , C23C16/345 , C23C16/42 , C23C16/4557 , C23C16/45525 , C23C16/45551 , C23C16/45553 , C23C16/45563 , C23C16/45565 , C23C16/45574 , H01L21/28088 , H01L21/28506 , H01L21/32051 , H01L21/32053 , H01L21/76877
摘要： Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.
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公开(公告)号：US20240003002A1
公开(公告)日：2024-01-04
申请号：US18370033
申请日：2023-09-19
IPC分类号： C23C16/14 , C23C16/24 , H01L21/285 , H01L21/768 , C23C16/455 , C23C16/02 , C23C16/52
CPC分类号： C23C16/14 , C23C16/24 , H01L21/28568 , H01L21/76876 , C23C16/45525 , C23C16/0281 , C23C16/52
摘要： There is provided a tungsten film-forming method, including: forming a silicon film on a substrate in a reduced pressure atmosphere by disposing the substrate having a protective film formed on a surface of the substrate in a processing container; forming an initial tungsten film by supplying a tungsten chloride gas to the substrate having the silicon film formed thereon; and forming a main tungsten film by supplying a tungsten-containing gas to the substrate having the initial tungsten film formed thereon.
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公开(公告)号：US11776980B2
公开(公告)日：2023-10-03
申请号：US16819023
申请日：2020-03-13
发明人： Luping Li , Jacqueline S. Wrench , Wen Ting Chen , Yixiong Yang , In Seok Hwang , Shih Chung Chen , Srinivas Gandikota
IPC分类号： H01L27/146 , C23C16/20 , C23C16/14 , C23C16/455 , H01L21/67
CPC分类号： H01L27/1463 , C23C16/14 , C23C16/20 , C23C16/45553 , H01L27/14629 , H01L27/14685 , H01L21/67167
摘要： Methods and apparatus for forming reflector films are described A liner is formed on a substrate surface followed by formation of the reflector layer so that there is no oxygen exposure between liner and reflector layer formation. In some embodiments, a high aspect ratio structure is filled with a reflector material by partially filling the structure with the reflector material while growth is inhibited at a top portion of the structure, reactivating the top portion of the substrate and then filling the structure with the reflector material.
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