公开(公告)号：US12062545B2

公开(公告)日：2024-08-13

申请号：US17339454

申请日：2021-06-04

申请人： Applied Materials, Inc.

发明人： Ilanit Fisher ,  Chi-Chou Lin ,  Kedi Wu ,  Wen Ting Chen ,  Shih Chung Chen ,  Srinivas Gandikota ,  Mandyam Sriram ,  Chenfei Shen ,  Naomi Yoshida ,  He Ren

IPC分类号： H01L21/285 ,  C23C16/02 ,  C23C16/04 ,  C23C16/14 ,  C23C16/455 ,  H01L21/02

CPC分类号： H01L21/28568 ,  C23C16/0227 ,  C23C16/04 ,  C23C16/14 ,  C23C16/45553 ,  H01L21/02068

摘要： Methods of forming metallic tungsten films selectively on a conductive surface relative to a dielectric surface are described. A substrate is exposed to a first process condition to deposit a tungsten-containing film that is substrate free of tungsten metal. The tungsten-containing film is then converted to a metallic tungsten film by exposure to a second process condition.

公开(公告)号：US20230313378A1

公开(公告)日：2023-10-05

申请号：US17709931

申请日：2022-03-31

申请人： Applied Materials, Inc.

发明人： Yongjing Lin ,  Lei Zhou ,  Muhannad Mustafa ,  Shih Chung Chen ,  Zhihui Liu ,  Chi-Chou Lin ,  Bin Cao ,  Janardhan Devrajan ,  Mario D. Silvetti ,  Mandyam Sriram

IPC分类号： C23C16/458 ,  C23C16/455

CPC分类号： C23C16/4586 ,  C23C16/45544

摘要： Substrate support, substrate support assemblies and process chambers comprising same are described. The substrate support has a thermally conductive body with a top surface, a bottom surface and an outer edge, and a plurality of long edge purge channel outlet opening at the outer edge of the thermally conductive body. The substrate support is configured to support a substrate to be processed on a top surface of the substrate support. The top surface of the thermally conductive body may have a ceramic coating. Each of the plurality of purge channel outlet is in fluid communication with a long edge purge channel. The long edge purge channel is coated with a long edge purge channel coating. A substrate support assembly includes the substrate support and the support post coupled to the substrate support. The processing chamber include a chamber body and the substrate support within the chamber body.

公开(公告)号：US11658218B2

公开(公告)日：2023-05-23

申请号：US17668992

申请日：2022-02-10

申请人： Applied Materials, Inc.

发明人： Yongjing Lin ,  Karla M Bernal Ramos ,  Shih Chung Chen ,  Yixiong Yang ,  Lin Dong ,  Steven C. H. Hung ,  Srinivas Gandikota

IPC分类号： H01L29/40 ,  H01L29/51 ,  H01L29/78 ,  H01L21/02 ,  H01L21/28

CPC分类号： H01L29/408 ,  H01L21/0228 ,  H01L21/02153 ,  H01L21/28158 ,  H01L29/513 ,  H01L29/517 ,  H01L29/7851

摘要： Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-κ dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), titanium oxide (TiO), tantalum oxide (TaO), and titanium aluminum carbide (TiAlC).

公开(公告)号：US20230113514A1

公开(公告)日：2023-04-13

申请号：US17541702

申请日：2021-12-03

申请人： Applied Materials, Inc.

发明人： Shih Chung Chen ,  Yongjing Lin ,  Chi-Chou Lin ,  Zhiyong Wang ,  Chih-Hsun Hsu ,  Mandyam Sriram ,  Tza-Jing Gung

IPC分类号： H01L21/768 ,  H01L21/311 ,  H01L21/02

摘要： Processing methods described herein comprise forming a metal gate film on a narrow feature and a wide feature and depositing a hard mask on the metal gate film. The hard mask forms on the metal gate film at a top, bottom and sidewalls of the wide feature and on a top of the narrow feature to cover the metal gate film. Some processing methods comprise oxidizing the metal gate film on the narrow feature to convert a portion of the metal gate film to a metal oxide film. Some processing methods comprise etching the metal oxide film from the narrow feature to leave a gradient etch profile. Some processing methods comprise filling the narrow feature and the wide feature with a gap fill material comprising one or more of a metal nitride, titanium nitride (TiN) or titanium oxynitride (TiON), the gap fill material substantially free of seams and voids.

公开(公告)号：US20220367236A1

公开(公告)日：2022-11-17

申请号：US17497881

申请日：2021-10-08

申请人： Applied Materials, Inc.

发明人： Muhannad Mustafa ,  Yongjing Lin ,  Satish Radhakrishnan ,  Haoyan Sha ,  Shih Chung Chen ,  Mario D. Silvetti ,  Mandyam Sriram ,  Vijay D. Parkhe

IPC分类号： H01L21/687 ,  H01L21/683 ,  C23C16/458 ,  C23C16/46

摘要： Some embodiments of the disclosure relate to methods of modifying a heater pedestal to improve temperature and thickness uniformity. Some embodiments of the disclosure relate to the modified heater pedestals with improved temperature and thickness uniformity. In some embodiments, the height of support mesas in different regions of the pedestal are modified to increase temperature uniformity. In some embodiments, the heater elements are moved above the vacuum channel and purge channel to increase temperature uniformity. In some embodiments, the edge ring is modified to be coplanar with the top of a supported substrate.

公开(公告)号：US11996455B2

公开(公告)日：2024-05-28

申请号：US18130201

申请日：2023-04-03

申请人： Applied Materials, Inc.

发明人： Yongjing Lin ,  Karla M Bernal Ramos ,  Shih Chung Chen ,  Yixiong Yang ,  Lin Dong ,  Steven C. H. Hung ,  Srinivas Gandikota

IPC分类号： H01L29/40 ,  H01L21/02 ,  H01L21/28 ,  H01L29/51 ,  H01L29/78

CPC分类号： H01L29/408 ,  H01L21/02153 ,  H01L21/0228 ,  H01L21/28158 ,  H01L29/513 ,  H01L29/517 ,  H01L29/7851

摘要： Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-κ dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), titanium oxide (TiO), tantalum oxide (TaO), and titanium aluminum carbide (TiAlC).

公开(公告)号：US20230253466A1

公开(公告)日：2023-08-10

申请号：US18130201

申请日：2023-04-03

申请人： Applied Materials, Inc.

发明人： Yongjing Lin ,  Karla M Bernal Ramos ,  Shih Chung Chen ,  Yixiong Yang ,  Lin Dong ,  Steven C.H. Hung ,  Srinivas Gandikota

IPC分类号： H01L29/40 ,  H01L29/51 ,  H01L29/78 ,  H01L21/02 ,  H01L21/28

CPC分类号： H01L29/408 ,  H01L21/0228 ,  H01L21/02153 ,  H01L21/28158 ,  H01L29/513 ,  H01L29/517 ,  H01L29/7851

摘要： Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-κ dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium aluminum nitride (TiAIN), titanium tantalum nitride (TiTaN), titanium oxide (TiO), tantalum oxide (TaO), and titanium aluminum carbide (TiAIC).

公开(公告)号：US20230193463A1

公开(公告)日：2023-06-22

申请号：US18065742

申请日：2022-12-14

申请人： Applied Materials, Inc.

发明人： Shashidhara Patel H B ,  Madhuri Kalva ,  Sreenivasa Rao Nunna ,  Shih Chung Chen ,  Yongjing Lin ,  Bin Cao

IPC分类号： C23C16/455 ,  H01J37/32

CPC分类号： C23C16/45565 ,  H01J37/32458 ,  H01J37/32449 ,  C23C16/45544

摘要： Gas distribution apparatuses, e.g., showerheads, comprise passages having a first conical bore section, a small bore section, and a second conical bore section. The first conical bore sections comprise a first non-perpendicular wall angle relative to a back surface of a faceplate. The second conical bore sections comprise a second non-perpendicular angle to a front surface of the faceplate. The conical sections including non-perpendicular angles are effective to mitigate and/or eliminate changes in flow parameters through the passages after bead blast processes.

公开(公告)号：US11552082B2

公开(公告)日：2023-01-10

申请号：US17002415

申请日：2020-08-25

申请人： Applied Materials, Inc.

发明人： Sung-Kwan Kang ,  Gill Yong Lee ,  Sang Ho Yu ,  Shih Chung Chen ,  Jeffrey W. Anthis

IPC分类号： H01L21/3213 ,  H01L21/28 ,  H01L21/321 ,  H01L21/02 ,  H01L27/108 ,  H01L29/49 ,  H01L29/423

摘要： Memory devices and methods of forming memory devices are described. The memory devices comprise two work-function metal layers, where one work-function layer has a lower work-function than the other work-function layer. The low work-function layer may reduce gate-induced drain leakage current losses. Methods of forming memory devices are also described.

公开(公告)号：US11289579B2

公开(公告)日：2022-03-29

申请号：US17034116

申请日：2020-09-28

申请人： Applied Materials, Inc.

发明人： Yongjing Lin ,  Karla M Bernal Ramos ,  Shih Chung Chen ,  Yixiong Yang ,  Lin Dong ,  Steven C. H. Hung ,  Srinivas Gandikota

IPC分类号： H01L29/40 ,  H01L29/51 ,  H01L29/78 ,  H01L21/02 ,  H01L21/28

摘要： Methods of forming and processing semiconductor devices are described. Certain embodiments related to electronic devices which comprise a dipole region having an interlayer dielectric, a high-κ dielectric material, and a dipole layer. The dipole layer comprises one or more of titanium aluminum nitride (TiAlN), titanium tantalum nitride (TiTaN), titanium oxide (TiO), tantalum oxide (TaO), and titanium aluminum carbide (TiAlC).