公开(公告)号：US20230207345A1

公开(公告)日：2023-06-29

申请号：US17561085

申请日：2021-12-23

Applicant: Applied Materials, Inc.

Inventor： Muhannad Mustafa ,  Mario D. Silvetti ,  Michael Jerry Duret ,  Sanjeev Baluja ,  Satish Radhakrishnan ,  Yuan Xiaoxiong

IPC: H01L21/67 ,  B23Q1/03

CPC classification number: H01L21/67103 ,  B23Q1/032

Abstract: Embodiments of the disclosure advantageously provide base plates with decreased metal contamination. Some embodiments of the disclosure advantageously provide base plates with increased edge purge channel uniformity. Some embodiments provide methods of forming base plates. Embodiments of the disclose are directed to a heater pedestal configured to support a substrate during processing. In some embodiments, the heater pedestal includes the base plate described herein.

公开(公告)号：US11081318B2

公开(公告)日：2021-08-03

申请号：US16220833

申请日：2018-12-14

Applicant: Applied Materials, Inc.

Inventor： Kenichi Ohno ,  Keiichi Tanaka ,  Li-Qun Xia ,  Tsutomu Tanaka ,  Dmitry A. Dzilno ,  Mario D. Silvetti ,  John C. Forster ,  Rakesh Ramadas ,  Mike Murtagh ,  Alexander V. Garachtchenko

IPC: H01L21/31 ,  H01J37/32 ,  C23C16/507 ,  C23C16/455 ,  C23C16/56

Abstract: Apparatus and methods for depositing and treating or etching a film are described. A batch processing chamber includes a plurality of processing regions with at least one plasma processing region. A low frequency bias generator is connected to a susceptor assembly to intermittently apply a low frequency bias to perform a directional treatment or etching the deposited film.

公开(公告)号：US20190385819A1

公开(公告)日：2019-12-19

申请号：US16444549

申请日：2019-06-18

Applicant: Applied Materials, Inc.

Inventor： Hari Ponnekanti ,  Tsutomu Tanaka ,  Mandyam Sriram ,  Dmitry A. Dzilno ,  Sanjeev Baluja ,  Mario D. Silvetti

IPC: H01J37/32 ,  H01L21/02 ,  C23C16/455 ,  C23C16/46

Abstract: Processing chambers with a plurality of processing stations and individual wafer support surfaces are described. The processing stations and wafer support surfaces are arranged so that there is an equal number of processing stations and heaters. An RF generator is connected to a first electrode in a first station and a second electrode in a second station. A bottom RF path is formed by a connection between the a first support surface and a second support surface.

公开(公告)号：US11692267B2

公开(公告)日：2023-07-04

申请号：US17139211

申请日：2020-12-31

Applicant: Applied Materials, Inc.

Inventor： Francis Kanyiri Mungai ,  Vijayabhaskara Venkatagiriyappa ,  Yung-Cheng Hsu ,  Keiichi Tanaka ,  Mario D. Silvetti ,  Mihaela A. Balseanu

IPC: C23C16/32 ,  C23C16/455 ,  H01L21/687 ,  C23C16/458

CPC classification number: C23C16/45536 ,  C23C16/325 ,  C23C16/4582 ,  C23C16/45544 ,  H01L21/68757

Abstract: Methods for modifying a susceptor having a silicon carbide (SiC) surface comprising exposing the silicon carbide surface (SiC) to an atmospheric plasma are described. The method increases the atomic oxygen content of the silicon carbide (SiC) surface.

公开(公告)号：US11174553B2

公开(公告)日：2021-11-16

申请号：US16444543

申请日：2019-06-18

Applicant: Applied Materials, Inc.

Inventor： Kenneth Brian Doering ,  Mario D. Silvetti ,  Kevin Griffin

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/458

Abstract: Gas injector inserts having a wedge-shaped housing, at least one first slot and at least one second slot are described. The housing has a first opening in the back face that is in fluid communication with the first slot in the front face and a second opening in the back face that is in fluid communication with the second slot in the front face. Each of the first slot and the second slot has an elongate axis that extends from the inner peripheral end to the outer peripheral end of the housing. The gas injector insert is configured to provide a flow of gas through the first slots at supersonic velocity. Gas distribution assemblies and processing chambers including the gas injector inserts are described.

公开(公告)号：US20210092800A1

公开(公告)日：2021-03-25

申请号：US16971409

申请日：2019-02-20

Applicant: Applied Materials, Inc.

Inventor： Kenneth Brian Doering ,  Gregory J. Wilson ,  Karthik Ramanathan ,  Mario D. Silvetti ,  Kevin Griffin

IPC: H05B3/14 ,  C23C16/455 ,  H05B3/00 ,  H05B3/03

Abstract: Heaters having a body with having a top and bottom comprising pyrolytic boron nitride (PBN), a first heater electrode and a second heater electrode are described. The heater electrodes can be enclosed within an electrically insulating standoff and connected to separate busbars to provide power. Heater assemblies including one or more of the heaters and processing chambers including the heater assemblies are also described.

公开(公告)号：US20190189400A1

公开(公告)日：2019-06-20

申请号：US16220833

申请日：2018-12-14

Applicant: Applied Materials, Inc.

Inventor： Kenichi Ohno ,  Keiichi Tanaka ,  Li-Qun Xia ,  Tsutomu Tanaka ,  Dmitry A. Dzilno ,  Mario D. Silvetti ,  John C. Forster ,  Rakesh Ramadas ,  Mike Murtagh ,  Alexander V. Garachtchenko

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/507 ,  C23C16/56

CPC classification number: H01J37/32385 ,  C23C16/45519 ,  C23C16/45544 ,  C23C16/507 ,  C23C16/56 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32568 ,  H01J2237/332 ,  H01J2237/3341

Abstract: Apparatus and methods for depositing and treating or etching a film are described. A batch processing chamber includes a plurality of processing regions with at least one plasma processing region. A low frequency bias generator is connected to a susceptor assembly to intermittently apply a low frequency bias to perform a directional treatment or etching the deposited film.

公开(公告)号：US11976363B2

公开(公告)日：2024-05-07

申请号：US17407086

申请日：2021-08-19

Applicant: Applied Materials, Inc.

Inventor： Muhannad Mustafa ,  Mario D. Silvetti ,  Kevin Griffin

IPC: C23C16/458 ,  H01L21/687 ,  H01L21/02

CPC classification number: C23C16/4585 ,  H01L21/68735 ,  H01L21/02337 ,  H01L21/02656

Abstract: Pedestal assemblies, purge rings for pedestal assemblies, and processing methods for increasing residence time of an edge purge gas in heated pedestal assemblies are described. Purge rings have an inner diameter face and an outer diameter face defining a thickness of the purge ring, a top surface and a bottom surface defining a height of the purge ring, and a thermal expansion feature. Purge rings comprise a plurality of apertures extending through the thickness and aligned circumferentially with a plurality of circumferentially spaced purge outlets in a substrate support.

公开(公告)号：US20220316061A1

公开(公告)日：2022-10-06

申请号：US17845191

申请日：2022-06-21

Applicant: Applied Materials, Inc.

Inventor： Kevin Griffin ,  Sanjeev Baluja ,  Joseph AuBuchon ,  Mario D. Silvetti ,  Hari Ponnekanti

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/52

Abstract: Processing chambers and methods to disrupt the boundary layer are described. The processing chamber includes a showerhead and a substrate support therein. The showerhead and the substrate support are spaced to have a process gap between them. In use, a boundary layer is formed adjacent to the substrate support or wafer surface. As the reaction occurs at the wafer surface, reaction products and byproduct are produced, resulting in reduced chemical utilization rate. The processing chamber and methods described disrupt the boundary layer by changing one or more process parameters (e.g., pressure, flow rate, time, process gap or temperature of fluid passing through the showerhead).

公开(公告)号：US20220093443A1

公开(公告)日：2022-03-24

申请号：US17029648

申请日：2020-09-23

Applicant: Applied Materials, Inc.

Inventor： Abhishek Chowdhury ,  Vijayabhaskara Venkatagiriyappa ,  Mihaela A. Balseanu ,  Jyoti Prakash Deo ,  Srinivas Ramakrishna ,  Keiichi Tanaka ,  Mandyam Sriram ,  Francis Kanyiri Mungai ,  Mario D. Silvetti ,  Sriharish Srinivasan

IPC: H01L21/683 ,  C23C16/458 ,  H01L21/687

Abstract: Apparatus and methods for vacuum chucking a substrate to a susceptor. The susceptor comprises one or more angularly spaced pockets are positioned around a center axis of the susceptor, the one or more angularly spaced pockets having an inner pocket and an outer pocket. The susceptor can be configured as an intermediate chuck having one or more pucks positioned within the inner pocket or as a distributed chuck having one or more pucks positioned within the outer pocket. The one or more pucks has a center hole, at least one radial channel and at least one circular channel having chuck holes for vacuum chucking a substrate.