公开(公告)号：US20240420953A1

公开(公告)日：2024-12-19

申请号：US18209719

申请日：2023-06-14

Applicant: Applied Materials, Inc.

Inventor： Rui Lu ,  Bo Xie ,  Wei Liu ,  Shanshan Yao ,  Xiaobo Li ,  Jingmei Liang ,  Li-Qun Xia ,  Shankar Venkataraman ,  Chi-I Lang

IPC: H01L21/02

Abstract: Exemplary processing methods may include providing a treatment precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. The substrate may include a layer of a silicon-containing material. The methods may include forming inductively-coupled plasma effluents of the treatment precursor. The methods may include contacting the layer of the silicon-containing material with the inductively-coupled plasma effluents of the treatment precursor to produce a treated layer of the silicon-containing material. The contacting may reduce a dielectric constant of the layer of the silicon-containing material.

公开(公告)号：US20240363337A1

公开(公告)日：2024-10-31

申请号：US18139699

申请日：2023-04-26

Applicant: Applied Materials, Inc.

Inventor： Muthukumar Kaliappan ,  Bo Xie ,  Shanshan Yao ,  Li-Qun Xia ,  Michael Haverty ,  Rui Lu ,  Xiaobo Li ,  Chi-I Lang ,  Shankar Venkataraman

IPC: H01L21/02 ,  C23C16/32 ,  C23C16/455 ,  C23C16/56

CPC classification number: H01L21/02167 ,  C23C16/325 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/45565 ,  C23C16/56 ,  H01L21/02211 ,  H01L21/02274

Abstract: Semiconductor processing methods are described for forming low-κ dielectric materials. The methods may include providing deposition precursors to a processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-carbon-and-hydrogen-containing precursor. A substrate may be disposed within the processing region. The methods may include forming plasma effluents of the deposition precursors. The methods may include depositing a layer of silicon-containing material on the substrate. The layer of silicon-containing material may be characterized by a dielectric constant of less than or about 4.0.

公开(公告)号：US20220130665A1

公开(公告)日：2022-04-28

申请号：US17077926

申请日：2020-10-22

Applicant: Applied Materials, Inc.

Inventor： Michael Wenyoung Tsiang ,  Abdul Aziz Khaja ,  Li-Qun Xia ,  Kevin Hsiao ,  Liangfa Hu ,  Yayun Cheng

IPC: H01L21/02 ,  H01L21/311 ,  C23C16/26

Abstract: Exemplary processing methods may include forming a plasma of a deposition precursor in a processing region of a semiconductor processing chamber. The methods may include adjusting a variable capacitor within 20% of a resonance peak. The variable capacitor may be coupled with an electrode incorporated within a substrate support on which a substrate is seated. The methods may include depositing a material on the substrate.

公开(公告)号：US11164753B2

公开(公告)日：2021-11-02

申请号：US14595595

申请日：2015-01-13

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Victor Nguyen ,  Mihaela Balseanu ,  Li-Qun Xia ,  Keiichi Tanaka ,  Steven D. Marcus

IPC: H01L21/311 ,  H01L21/033 ,  H01J37/32 ,  H01L21/687 ,  C23C16/455

Abstract: Provided are self-aligned double patterning methods including feature trimming. The SADP process is performed in a single batch processing chamber in which the substrate is laterally moved between sections of the processing chamber separated by gas curtains so that each section independently has a process condition.

公开(公告)号：US11017997B2

公开(公告)日：2021-05-25

申请号：US16477671

申请日：2018-01-11

Applicant: Applied Materials, Inc.

Inventor： Wenbo Yan ,  Cong Trinh ,  Ning Li ,  Mihaela Balseanu ,  Li-Qun Xia ,  Maribel Maldonado-Garcia

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/455 ,  H01L21/687

Abstract: Processing methods for forming a silicon nitride film comprising exposing a metal surface to a silicon precursor, a nitrogen-containing reactant and a hydrogen-containing plasma at a temperature less than or equal to about 250° C. to form a silicon nitride film with a low etch rate without damaging the metal surface.

公开(公告)号：US10943780B2

公开(公告)日：2021-03-09

申请号：US16195168

申请日：2018-11-19

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  David Thompson ,  Li-Qun Xia

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/02 ,  C23C16/40

Abstract: Methods for depositing metal oxide layers on metal surfaces are described. The methods include exposing a substrate to separate doses of a metal precursor, which does not contain metal-oxygen bonds, and an alcohol. These methods do not oxidize the underlying metal layer.

公开(公告)号：US20210043448A1

公开(公告)日：2021-02-11

申请号：US17081256

申请日：2020-10-27

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Mihaela A. Balseanu ,  Li-Qun Xia ,  Dongqing Yang ,  Lala Zhu ,  Malcolm J. Bevan ,  Theresa Kramer Guarini ,  Wenbo Yan

IPC: H01L21/02 ,  H01L21/3105 ,  C23C16/458 ,  C23C16/455 ,  C23C16/04 ,  C23C16/02 ,  C23C16/56

Abstract: Processing platforms having a central transfer station with a robot and an environment having greater than or equal to about 0.1% by weight water vapor, a pre-clean chamber connected to a side of the transfer station and a batch processing chamber connected to a side of the transfer station. The processing platform configured to pre-clean a substrate to remove native oxides from a first surface, form a blocking layer using a alkylsilane and selectively deposit a film. Methods of using the processing platforms and processing a plurality of wafers are also described.

公开(公告)号：US20200332415A1

公开(公告)日：2020-10-22

申请号：US16637170

申请日：2018-08-06

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Zhelin Sun ,  Ning Li ,  Mihaela Balseanu ,  Li-Qun Xia ,  Yijun Liu ,  Lin Yang

IPC: C23C16/455 ,  C23C16/56 ,  H01L21/02

Abstract: Methods and apparatus for forming a conformal SiCON film on a surface are described. A SiCN film is formed on a substrate surface and exposed to a low temperature steam annealing process to form a film resistant to damage by rapid thermal processing or ashing. The film is treated by rapid thermal processing and then subjected to a high temperature anneal to form a film with a low dielectric constant.

公开(公告)号：US20160322214A1

公开(公告)日：2016-11-03

申请号：US15142514

申请日：2016-04-29

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Mark Saly ,  David Thompson ,  Mihaela Balseanu ,  Li-Qun Xia

IPC: H01L21/02 ,  H01L21/306

CPC classification number: H01L21/0228 ,  C23C16/30 ,  C23C16/308 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45553 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31111

Abstract: Methods for the formation of SiCN, SiCO and SiCON films comprising cyclical exposure of a substrate surface to a silicon-containing gas, a carbon-containing gas and a plasma. Some embodiments further comprise the addition of an oxidizing agent prior to at least the plasma exposure.

Abstract translation: 用于形成SiCN，SiCO和SiCON膜的方法包括将衬底表面循环暴露于含硅气体，含碳气体和等离子体。 一些实施方案还包括在至少等离子体暴露之前加入氧化剂。

公开(公告)号：US09443716B2

公开(公告)日：2016-09-13

申请号：US14878576

申请日：2015-10-08

Applicant: Applied Materials, Inc.

Inventor： Kenji Takeshita ,  Nobuhiro Sakamoto ,  Yoshihiro Takenaga ,  Li-Qun Xia ,  Mandyam Sriram

IPC: H01L21/02 ,  H01L21/027 ,  H01L21/311

CPC classification number: H01L21/02271 ,  C23C16/45525 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/31144

Abstract: Methods for self-aligned multiple patterning including controlled slimming of features during spacer layer deposition. Multiple spacer layer deposition process conditions produce a balance between controlling the damage to the features and increasing production throughput.

Abstract translation: 用于自对准多重图案化的方法，包括间隔层沉积期间特征的受控减肥。 多个间隔层沉积工艺条件在控制特征损伤和提高生产量之间产生平衡。