公开(公告)号：US10971390B2

公开(公告)日：2021-04-06

申请号：US16437048

申请日：2019-06-11

申请人： Applied Materials, Inc.

发明人： Abdul Aziz Khaja ,  Liangfa Hu ,  Sudha S. Rathi ,  Ganesh Balasubramanian

IPC分类号： H01L21/687 ,  H01L21/67

摘要： The present disclosure generally relates to substrate supports for semiconductor processing. In one embodiment, a substrate support is provided. The substrate support includes a body comprising a substrate chucking surface, an electrode disposed within the body, a plurality of substrate supporting features formed on the substrate chucking surface, wherein the number of substrate supporting features increases radially from a center of the substrate chucking surface to an edge of the substrate chucking surface, and a seasoning layer formed on the plurality of the substrate supporting features, the seasoning layer comprising a silicon nitride.

公开(公告)号：US20230390811A1

公开(公告)日：2023-12-07

申请号：US17833408

申请日：2022-06-06

申请人： Applied Materials, Inc.

发明人： Khokan Chandra Paul ,  Truong Van Nguyen ,  Kelvin Chan ,  Diwakar Kedlaya ,  Anantha K. Subramani ,  Abdul Aziz Khaja ,  Vijet Patil ,  Yusheng Fang ,  Liangfa Hu ,  Prashant Kumar Kulshreshtha

IPC分类号： B08B7/00 ,  H01J37/32 ,  B08B5/00 ,  B08B9/032

CPC分类号： B08B7/0035 ,  H01J37/32449 ,  H01J37/32357 ,  H01J37/32862 ,  B08B5/00 ,  B08B9/0328 ,  H01J2237/334 ,  H01J2237/332 ,  B08B2209/032

摘要： Exemplary semiconductor processing systems may include a processing chamber defining a processing region. The systems may include a foreline coupled with the processing chamber, the foreline defining a fluid conduit. The systems may include a radical generator having an inlet and an outlet. The outlet may be fluidly coupled with the foreline. The systems may include a gas source fluidly coupled with the inlet of the radical generator. The systems may include a throttle valve coupled with the foreline downstream of the radical generator.

公开(公告)号：US11515150B2

公开(公告)日：2022-11-29

申请号：US17077926

申请日：2020-10-22

申请人： Applied Materials, Inc.

发明人： Michael Wenyoung Tsiang ,  Abdul Aziz Khaja ,  Li-Qun Xia ,  Kevin Hsiao ,  Liangfa Hu ,  Yayun Cheng

IPC分类号： H01L21/02 ,  C23C16/26 ,  H01L21/311

摘要： Exemplary processing methods may include forming a plasma of a deposition precursor in a processing region of a semiconductor processing chamber. The methods may include adjusting a variable capacitor within 20% of a resonance peak. The variable capacitor may be coupled with an electrode incorporated within a substrate support on which a substrate is seated. The methods may include depositing a material on the substrate.

公开(公告)号：US11756819B2

公开(公告)日：2023-09-12

申请号：US16855206

申请日：2020-04-22

申请人： Applied Materials, Inc.

发明人： Liangfa Hu ,  Abdul Aziz Khaja ,  Sarah Michelle Bobek ,  Prashant Kumar Kulshreshtha ,  Yoichi Suzuki

IPC分类号： H01L21/683 ,  H01L21/26 ,  H01L21/687

CPC分类号： H01L21/6833 ,  H01L21/26 ,  H01L21/68735

摘要： Embodiments of the present disclosure generally relate to apparatus and methods for reducing substrate backside damage during semiconductor device processing. In one implementation, a method of chucking a substrate in a substrate process chamber includes exposing the substrate to a plasma preheat treatment prior to applying a chucking voltage to a substrate support. In one implementation, a substrate support is provided and includes a body having an electrode and thermal control device disposed therein. A plurality of substrate supporting features are formed on an upper surface of the body, each of the substrate supporting features having a substrate supporting surface and a rounded edge.

公开(公告)号：US11560623B2

公开(公告)日：2023-01-24

申请号：US16857755

申请日：2020-04-24

申请人： Applied Materials, Inc.

发明人： Liangfa Hu ,  Prashant Kumar Kulshreshtha ,  Anjana M. Patel ,  Abdul Aziz Khaja ,  Viren Kalsekar ,  Vinay K. Prabhakar ,  Satya Teja Babu Thokachichu ,  Byung Seok Kwon ,  Ratsamee Limdulpaiboon ,  Kwangduk Douglas Lee ,  Ganesh Balasubramanian

IPC分类号： C23C16/455 ,  C23C16/505 ,  C23C16/44

摘要： The present disclosure relates to systems and methods for reducing the formation of hardware residue and minimizing secondary plasma formation during substrate processing in a process chamber. The process chamber may include a gas distribution member configured to flow a first gas into a process volume and generate a plasma therefrom. A second gas is supplied into a lower region of the process volume. Further, an exhaust port is disposed in the lower region to remove excess gases or by-products from the process volume during or after processing.

公开(公告)号：US20220130665A1

公开(公告)日：2022-04-28

申请号：US17077926

申请日：2020-10-22

申请人： Applied Materials, Inc.

发明人： Michael Wenyoung Tsiang ,  Abdul Aziz Khaja ,  Li-Qun Xia ,  Kevin Hsiao ,  Liangfa Hu ,  Yayun Cheng

IPC分类号： H01L21/02 ,  H01L21/311 ,  C23C16/26

摘要： Exemplary processing methods may include forming a plasma of a deposition precursor in a processing region of a semiconductor processing chamber. The methods may include adjusting a variable capacitor within 20% of a resonance peak. The variable capacitor may be coupled with an electrode incorporated within a substrate support on which a substrate is seated. The methods may include depositing a material on the substrate.