公开(公告)号：US20230390811A1

公开(公告)日：2023-12-07

申请号：US17833408

申请日：2022-06-06

申请人： Applied Materials, Inc.

发明人： Khokan Chandra Paul ,  Truong Van Nguyen ,  Kelvin Chan ,  Diwakar Kedlaya ,  Anantha K. Subramani ,  Abdul Aziz Khaja ,  Vijet Patil ,  Yusheng Fang ,  Liangfa Hu ,  Prashant Kumar Kulshreshtha

IPC分类号： B08B7/00 ,  H01J37/32 ,  B08B5/00 ,  B08B9/032

CPC分类号： B08B7/0035 ,  H01J37/32449 ,  H01J37/32357 ,  H01J37/32862 ,  B08B5/00 ,  B08B9/0328 ,  H01J2237/334 ,  H01J2237/332 ,  B08B2209/032

摘要： Exemplary semiconductor processing systems may include a processing chamber defining a processing region. The systems may include a foreline coupled with the processing chamber, the foreline defining a fluid conduit. The systems may include a radical generator having an inlet and an outlet. The outlet may be fluidly coupled with the foreline. The systems may include a gas source fluidly coupled with the inlet of the radical generator. The systems may include a throttle valve coupled with the foreline downstream of the radical generator.

公开(公告)号：US11804363B2

公开(公告)日：2023-10-31

申请号：US17088834

申请日：2020-11-04

申请人： Applied Materials, Inc.

发明人： Fang Ruan ,  Diwakar Kedlaya ,  Truong Van Nguyen ,  Mingle Tong ,  Sherry L. Mings ,  Venkata Sharat Chandra Parimi

IPC分类号： H01J37/32 ,  H01L21/67

CPC分类号： H01J37/3244 ,  H01L21/67069 ,  H01J2237/002 ,  H01J2237/332

摘要： Exemplary semiconductor processing chambers may include an inlet manifold defining a central aperture. The inlet manifold may also define a first channel and a second channel, and each of the channels may extend through the inlet manifold radially outward of the central aperture. The chambers may also include a gasbox characterized by a first surface facing the inlet manifold and a second surface opposite the first. The gasbox may define a central aperture aligned with the central aperture of the inlet manifold. The gasbox may define a first annular channel in the first surface extending about the central aperture of the gasbox and fluidly coupled with the first channel of the inlet manifold. The gasbox may define a second annular channel extending radially outward of the first and fluidly coupled with the second channel of the inlet manifold. The second annular channel may be fluidly isolated from the first.

公开(公告)号：US20230033058A1

公开(公告)日：2023-02-02

申请号：US17389103

申请日：2021-07-29

申请人： Applied Materials, Inc.

发明人： Khokan Chandra Paul ,  Truong Van Nguyen ,  Diwakar Kedlaya ,  Maziar Aghvami ,  Vijet Patil ,  Shashank Sharma

IPC分类号： H01J37/32

摘要： Exemplary semiconductor processing systems may include an inductively coupled plasma source. The systems may include an RF power source that is electrically coupled with the inductively coupled plasma source. The systems may include a first gas source fluidly coupled with the inductively coupled plasma source. The systems may include a second gas source. The systems may include a dual-channel showerhead assembly defining a first plurality of apertures and a second plurality of apertures. The first plurality of apertures may be fluidly coupled with the inductively coupled plasma source. The second plurality of apertures are fluidly coupled with the second gas source.

公开(公告)号：US20220108872A1

公开(公告)日：2022-04-07

申请号：US17063366

申请日：2020-10-05

申请人： Applied Materials, Inc.

发明人： Zubin Huang ,  Diwakar Kedlaya ,  Rui Cheng ,  Truong Van Nguyen ,  Manjunath Patil ,  Pavan Kumar Murali Kumar ,  Subrahmanyam Veerisetty ,  Karthik Janakiraman

IPC分类号： H01J37/32 ,  C23C16/44 ,  C23C16/50 ,  C23C16/56

摘要： Exemplary semiconductor processing systems may include a chamber body comprising sidewalls and a base. The systems may include a substrate support extending through the base of the chamber body. The substrate support may include a support plate defining a plurality of channels through an interior of the support plate. Each channel of the plurality of channels may include a radial portion extending outward from a central channel through the support plate. Each channel may also include a vertical portion formed at an exterior region of the support plate fluidly coupling the radial portion with a support surface of the support plate. The substrate support may include a shaft coupled with the support plate. The central channel may extend through the shaft. The systems may include a fluid source coupled with the central channel of the substrate support.

公开(公告)号：US20220093371A1

公开(公告)日：2022-03-24

申请号：US17026885

申请日：2020-09-21

申请人： Applied Materials, Inc.

发明人： Zubin Huang ,  Truong Van Nguyen ,  Rui Cheng ,  Diwakar Kedlaya ,  Manjunath Veerappa Chobari Patil ,  Prashant A. Desai ,  Paul L. Brillhart ,  Karthik Janakiraman ,  Pavan Kumar Murali Kumar

IPC分类号： H01J37/32 ,  C23C16/455 ,  C23C16/458 ,  C23C16/44

摘要： Exemplary semiconductor processing systems include a chamber body having sidewalls and a base. The systems may include a substrate support extending through the base. The substrate support may include a support plate defining lift pin locations and a shaft coupled with the support plate. The systems may include a shield coupled with the shaft and extending below the support plate. The shield may define a central aperture that extends beyond an outer periphery of the shaft. The systems may include a purge baffle coupled with the shield at a position that is beyond the central aperture such that a space between the purge baffle and the shaft is in fluid communication with a space between the shield and the support plate. The purge baffle may extend along at least a portion of the shaft. The systems may include a purge gas source coupled with the purge baffle.

公开(公告)号：US20220199373A1

公开(公告)日：2022-06-23

申请号：US17127201

申请日：2020-12-18

申请人： Applied Materials, Inc.

发明人： Venkata Sharat Chandra Parimi ,  Zubin Huang ,  Manjunath Veerappa Chobari Patil ,  Nitin Pathak ,  Yi Yang ,  Badri N. Ramamurthi ,  Truong Van Nguyen ,  Rui Cheng ,  Diwakar Kedlaya

IPC分类号： H01J37/32 ,  C23C16/50 ,  C23C16/458 ,  C23C16/44

摘要： Exemplary semiconductor processing chambers include a chamber body defining a processing region. The chambers may include a substrate support disposed within the processing region. The substrate support may have an upper surface that defines a recessed substrate seat. The chambers may include a shadow ring disposed above the substrate seat and the upper surface. The shadow ring may extend about a peripheral edge of the substrate seat. The chambers may include bevel purge openings defined within the substrate support proximate the peripheral edge. A bottom surface of the shadow ring may be spaced apart from a top surface of the upper surface to form a purge gas flow path that extends from the bevel purge openings along the shadow ring. A space formed between the shadow ring and the substrate seat may define a process gas flow path. The gas flow paths may be in fluid communication with one another.

公开(公告)号：US20220108891A1

公开(公告)日：2022-04-07

申请号：US17064389

申请日：2020-10-06

申请人： Applied Materials, Inc.

发明人： Zubin Huang ,  Manjunath Veerappa Chobari Patil ,  Diwakar Kedlaya ,  Truong Van Nguyen ,  Pavan Kumar Murali Kumar ,  Subrahmanyam Veerisetty ,  Venkata Sharat Chandra Parimi ,  Fang Ruan

IPC分类号： H01L21/033 ,  H01J37/32 ,  C23C16/50 ,  C23C16/455 ,  H01L21/02 ,  C23C16/04

摘要： Exemplary semiconductor processing chambers may include a faceplate assembly characterized by at least one surface defining a number of voids. Each void is configured to receive an interchangeable thermal body that can be selected from multiple interchangeable thermal bodies. Exemplary semiconductor processing chambers may also include a gas box characterized by movable members. Each movable member is configured to engage a delivery port and is movable to provide flow control for a gas being delivered to the processing volume through a gas flow path. Zoned flow and/or temperature control may be provided by the faceplate assembly, the gas box, or both.

公开(公告)号：US20210142984A1

公开(公告)日：2021-05-13

申请号：US17088834

申请日：2020-11-04

申请人： Applied Materials, Inc.

发明人： Fang Ruan ,  Diwakar Kedlaya ,  Truong Van Nguyen ,  Mingle Tong ,  Sherry L. Mings ,  Venkata Sharat Chandra Parimi

IPC分类号： H01J37/32 ,  H01L21/67

摘要： Exemplary semiconductor processing chambers may include an inlet manifold defining a central aperture. The inlet manifold may also define a first channel and a second channel, and each of the channels may extend through the inlet manifold radially outward of the central aperture. The chambers may also include a gasbox characterized by a first surface facing the inlet manifold and a second surface opposite the first. The gasbox may define a central aperture aligned with the central aperture of the inlet manifold. The gasbox may define a first annular channel in the first surface extending about the central aperture of the gasbox and fluidly coupled with the first channel of the inlet manifold. The gasbox may define a second annular channel extending radially outward of the first and fluidly coupled with the second channel of the inlet manifold. The second annular channel may be fluidly isolated from the first.