- 专利标题: Methods of reducing chamber residues
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申请号: US16857755申请日: 2020-04-24
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公开(公告)号: US11560623B2公开(公告)日: 2023-01-24
- 发明人: Liangfa Hu , Prashant Kumar Kulshreshtha , Anjana M. Patel , Abdul Aziz Khaja , Viren Kalsekar , Vinay K. Prabhakar , Satya Teja Babu Thokachichu , Byung Seok Kwon , Ratsamee Limdulpaiboon , Kwangduk Douglas Lee , Ganesh Balasubramanian
- 申请人: Applied Materials, Inc.
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Patterson + Sheridan, LLP
- 主分类号: C23C16/455
- IPC分类号: C23C16/455 ; C23C16/505 ; C23C16/44
摘要:
The present disclosure relates to systems and methods for reducing the formation of hardware residue and minimizing secondary plasma formation during substrate processing in a process chamber. The process chamber may include a gas distribution member configured to flow a first gas into a process volume and generate a plasma therefrom. A second gas is supplied into a lower region of the process volume. Further, an exhaust port is disposed in the lower region to remove excess gases or by-products from the process volume during or after processing.
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