公开(公告)号：US11830706B2

公开(公告)日：2023-11-28

申请号：US16703140

申请日：2019-12-04

申请人： Applied Materials, Inc.

发明人： Venkata Sharat Chandra Parimi ,  Zubin Huang ,  Jian Li ,  Satish Radhakrishnan ,  Rui Cheng ,  Diwakar N. Kedlaya ,  Juan Carlos Rocha-Alvarez ,  Umesh M. Kelkar ,  Karthik Janakiraman ,  Sarah Michelle Bobek ,  Prashant Kumar Kulshreshtha ,  Vinay K. Prabhakar ,  Byung Seok Kwon

IPC分类号： H01L21/67 ,  H05B3/10 ,  H01J37/32 ,  C23C16/458 ,  C23C16/50 ,  C23C16/46 ,  H05B3/14

CPC分类号： H01J37/32724 ,  C23C16/4583 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/50 ,  H01J37/32715 ,  H01L21/67103 ,  H05B3/10 ,  H05B3/143 ,  H01J2237/2007 ,  H01J2237/3321

摘要： Embodiments of the present disclosure generally relate to a pedestal for increasing temperature uniformity in a substrate supported thereon. The pedestal comprises a body having a heater embedded therein. The body comprises a patterned surface that includes a first region having a first plurality of posts extending from a base surface of the body at a first height, and a second region surrounding the central region having a second plurality of posts extending from the base surface at a second height that is greater than the first height, wherein an upper surface of each of the first plurality of posts and the second plurality of posts are substantially coplanar and define a substrate receiving surface.

公开(公告)号：US11682574B2

公开(公告)日：2023-06-20

申请号：US16677491

申请日：2019-11-07

申请人： Applied Materials, Inc.

发明人： Abdul Aziz Khaja ,  Venkata Sharat Chandra Parimi ,  Sarah Michelle Bobek ,  Prashant Kumar Kulshreshtha ,  Vinay K. Prabhakar

IPC分类号： H01L21/683 ,  H01J37/32

CPC分类号： H01L21/6833 ,  H01J37/32642 ,  H01J37/32724

摘要： Aspects of the present disclosure relate to one or more implementations of a substrate support for a processing chamber. In one implementation, a substrate support includes a body having a center, and a support surface on the body configured to at least partially support a substrate. The substrate support includes a first angled wall that extends upward and radially outward from the support surface, and a first upper surface disposed above the support surface. The substrate support also includes a second angled wall that extends upward and radially outward from the first upper surface, the first upper surface extending between the first angled wall and the second angled wall. The substrate support also includes a second upper surface extending from the second angled wall. The second upper surface is disposed above the first upper surface.

公开(公告)号：US11587773B2

公开(公告)日：2023-02-21

申请号：US16814736

申请日：2020-03-10

申请人： Applied Materials, Inc.

发明人： Viren Kalsekar ,  Vinay K. Prabhakar ,  Venkata Sharat Chandra Parimi

IPC分类号： H01J37/32 ,  H01L21/683

摘要： A substrate pedestal includes a thermally conductive substrate support including a mesh, a thermally conductive shaft including a plurality of conductive rods therein, each conductive rod having a first end and a second end, and a sensor. The first end of each conductive rod is electrically coupled to the mesh, and the sensor is disposed between the first and second ends of each conductive rod and configured to detect current flow through each conductive rod.

公开(公告)号：US20220020615A1

公开(公告)日：2022-01-20

申请号：US16932795

申请日：2020-07-19

申请人： Applied Materials, Inc.

发明人： Nitin Pathak ,  Vinay K. Prabhakar ,  Badri N. Ramamurthi ,  Viren Kalsekar ,  Juan Carlos Rocha-Alvarez

IPC分类号： H01L21/67 ,  H01L21/677 ,  H01J37/32

摘要： Exemplary substrate processing systems may include a plurality of processing regions. The systems may include a transfer region housing defining a transfer region fluidly coupled with the plurality of processing regions. The systems may include a plurality of substrate supports. Each substrate support of the plurality of substrate supports may be vertically translatable between the transfer region and an associated processing region of the plurality of processing regions. The systems may include a transfer apparatus including a rotatable shaft extending through the transfer region housing. The transfer apparatus may also include an end effector coupled with the rotatable shaft. The systems may include an exhaust foreline including a plurality of foreline tails. Each foreline tail of the plurality of foreline tails may be fluidly coupled with a separate processing region of the plurality of processing regions. The systems may include a plurality of throttle valves.

公开(公告)号：US10923334B2

公开(公告)日：2021-02-16

申请号：US16403489

申请日：2019-05-03

申请人： Applied Materials, Inc.

发明人： Satya Thokachichu ,  Edward P. Hammond, IV ,  Viren Kalsekar ,  Zheng John Ye ,  Sarah Michelle Bobek ,  Abdul Aziz Khaja ,  Vinay K. Prabhakar ,  Venkata Sharat Chandra Parimi ,  Prashant Kumar Kulshreshtha ,  Kwangduk Douglas Lee

IPC分类号： H01J37/32 ,  H01L21/683 ,  C23C16/46 ,  C23C16/509 ,  H01L21/02 ,  H01L21/285

摘要： One or more embodiments described herein generally relate to selective deposition of substrates in semiconductor processes. In these embodiments, a precursor is delivered to a process region of a process chamber. A plasma is generated by delivering RF power to an electrode within a substrate support surface of a substrate support disposed in the process region of the process chamber. In embodiments described herein, delivering the RF power at a high power range, such as greater than 4.5 kW, advantageously leads to greater plasma coupling to the electrode, resulting in selective deposition to the substrate, eliminating deposition on other process chamber areas such as the process chamber side walls. As such, less process chamber cleans are necessary, leading to less time between depositions, increasing throughput and making the process more cost-effective.

公开(公告)号：US12000048B2

公开(公告)日：2024-06-04

申请号：US18111842

申请日：2023-02-20

申请人： Applied Materials, Inc.

发明人： Sarah Michelle Bobek ,  Venkata Sharat Chandra Parimi ,  Prashant Kumar Kulshreshtha ,  Vinay K. Prabhakar ,  Kwangduk Douglas Lee ,  Sungwon Ha ,  Jian Li

IPC分类号： C23C16/458 ,  C23C16/46

CPC分类号： C23C16/4586 ,  C23C16/4585 ,  C23C16/46

摘要： Aspects of the present disclosure relate generally to pedestals, components thereof, and methods of using the same for substrate processing chambers. In one implementation, a pedestal for disposition in a substrate processing chamber includes a body. The body includes a support surface. The body also includes a stepped surface that protrudes upwards from the support surface. The stepped surface is disposed about the support surface to surround the support surface. The stepped surface defines an edge ring such that the edge ring is integrated with the pedestal to form the body that is monolithic. The pedestal also includes an electrode disposed in the body, and one or more heaters disposed in the body.

公开(公告)号：US20230265560A1

公开(公告)日：2023-08-24

申请号：US18102861

申请日：2023-01-30

申请人： Applied Materials, Inc.

发明人： Badri Narayan Ramamurthi ,  Viren Sunil Kalsekar ,  Vinay K. Prabhakar

IPC分类号： C23C16/455 ,  C23C16/458

CPC分类号： C23C16/45591 ,  C23C16/458

摘要： Disclosed herein is a pumping liner, having a gas inlet configured to receive a process gas; openings in communication with the gas inlet, the openings configured to surround a substrate support and to direct the process gas onto the substrate support. At least a portion of the openings each has a different size. Each of the openings is configured to provide a gas mass flow rate that is within ±5% of a target gas mass flow rate. The pumping liner further includes a gas outlet configured to receive unreacted process gas and reacted process gas byproducts.

公开(公告)号：US11569072B2

公开(公告)日：2023-01-31

申请号：US16391996

申请日：2019-04-23

申请人： Applied Materials, Inc.

发明人： Satya Thokachichu ,  Edward P. Hammond, IV ,  Viren Kalsekar ,  Zheng John Ye ,  Abdul Aziz Khaja ,  Vinay K. Prabhakar

IPC分类号： H01J37/32 ,  H01L21/683 ,  C23C16/46 ,  C23C16/509 ,  H01L21/02 ,  H01L21/285

摘要： Embodiments of the present disclosure generally relate to substrate supports for process chambers and RF grounding configurations for use therewith. Methods of grounding RF current are also described. A chamber body at least partially defines a process volume therein. A first electrode is disposed in the process volume. A pedestal is disposed opposite the first electrode. A second electrode is disposed in the pedestal. An RF filter is coupled to the second electrode through a conductive rod. The RF filter includes a first capacitor coupled to the conductive rod and to ground. The RF filter also includes a first inductor coupled to a feedthrough box. The feedthrough box includes a second capacitor and a second inductor coupled in series. A direct current (DC) power supply for the second electrode is coupled between the second capacitor and the second inductor.

公开(公告)号：US20210159048A1

公开(公告)日：2021-05-27

申请号：US16694062

申请日：2019-11-25

申请人： Applied Materials, Inc.

发明人： Venkata Sharat Chandra Parimi ,  Xiaoquan Min ,  Zheng John Ye ,  Prashant Kumar Kulshreshtha ,  Vinay K. Prabhakar ,  Lu Xu ,  Kwangduk Douglas Lee

IPC分类号： H01J37/32 ,  C23C16/455 ,  C23C16/34 ,  C23C16/40 ,  C23C16/44 ,  H01L21/02

摘要： A plasma processing system is described. The system may include a showerhead. The system may further include a first RF generator in electrical communication with the showerhead. The first RF generator may be configured to deliver a first voltage at a first frequency to the showerhead. Additionally, the system may include a second RF generator in electrical communication with a pedestal. The second RF generator may be configured to deliver a second voltage at a second frequency to the pedestal. The second frequency may be less than the first frequency. The system may also include a terminator in electrical communication with the showerhead. The terminator may provide a path to ground for the second voltage. Methods of depositing material using the plasma processing system are described. A method of seasoning a chamber by depositing silicon oxide and silicon nitride on the wall of the chamber is also described.

公开(公告)号：US20240047185A1

公开(公告)日：2024-02-08

申请号：US17880335

申请日：2022-08-03

申请人： Applied Materials, Inc.

发明人： Abhijit A. Kangude ,  Badri N. Ramamurthi ,  Arun Chakravarthy Chakravarthy ,  Vinay K. Prabhakar ,  Dharma Ratnam Srichurnam

IPC分类号： H01J37/32 ,  C23C16/44

CPC分类号： H01J37/32853 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32899 ,  H01J37/32522 ,  C23C16/4405 ,  C23C16/4408 ,  H01J2237/002

摘要： Exemplary substrate processing systems may include a lid plate. The systems may include a gas feed line having an RPS outlet and a bypass outlet. The systems may include a remote plasma unit supported atop the lid plate. The remote plasma unit may include an inlet and an outlet. The inlet may be coupled with the RPS outlet. The systems may include a center manifold having an RPS inlet coupled with the outlet and a bypass inlet coupled with the bypass outlet. The center manifold may include a plurality of outlet ports. The systems may include a plurality of side manifolds that are fluidly coupled with the outlet ports. Each of the side manifolds may define a gas lumen. The systems may include a plurality of output manifolds seated on the lid plate. Each output manifold may be fluidly coupled with the gas lumen of one of the side manifolds.