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    HIGH CONDUCTANCE DIVERT LINE ARCHITECTURE
    2.
    发明公开
    HIGH CONDUCTANCE DIVERT LINE ARCHITECTURE 审中-公开

    公开(公告)号：US20240047232A1

    公开(公告)日：2024-02-08

    申请号：US17880885

    申请日：2022-08-04

    Applicant: Applied Materials, Inc.

    Inventor： Abhijit A. Kangude ,  Elizabeth Neville ,  Arun Chakravarthy Chakravarthy

    IPC: H01L21/67

    CPC classification number: H01L21/67017 ,  H01L21/67167

    Abstract: Exemplary semiconductor processing systems may include a lid plate and a gas splitter. The gas splitter may be seated on the lid plate. The gas splitter may include a top surface and a plurality of side surfaces. The gas splitter may define a gas inlet, a gas outlet, a gas lumen that extends between and fluidly couples the gas inlet with the gas outlet, and a first divert lumen that is fluidly coupled with the gas lumen and that directs gases away from a processing chamber through a divert outlet. The semiconductor processing system may include a first divert weldment. The first divert weldment may extend from and fluidly couple to the divert outlet. The first divert weldment may include a first divert weldment outlet and a second divert weldment outlet.

    GASBOX FOR SEMICONDUCTOR PROCESSING CHAMBER
    5.
    发明申请
    GASBOX FOR SEMICONDUCTOR PROCESSING CHAMBER 有权

    公开(公告)号：US20250014914A1

    公开(公告)日：2025-01-09

    申请号：US18773946

    申请日：2024-07-16

    Applicant: Applied Materials, Inc.

    Inventor： Rahul Rajeev ,  Yunzhe Yang ,  Abhijit A. Kangude ,  Kedar Joshi

    IPC: H01L21/67 ,  C23C16/50 ,  H01J37/32

    Abstract: Exemplary semiconductor processing chambers may include a gasbox including a first plate having a first surface and a second surface opposite to the first surface. The first plate of the gasbox may define a central aperture that extends from the first surface to the second surface. The first plate may define an annular recess in the second surface. The first plate may define a plurality of apertures extending from the first surface to the annular recess in the second surface. The gasbox may include a second plate characterized by an annular shape. The second plate may be coupled with the first plate at the annular recess to define a first plenum within the first plate.

    SYSTEMS AND METHODS FOR DEPOSITING LOW-K DIELECTRIC FILMS
    6.
    发明申请
    SYSTEMS AND METHODS FOR DEPOSITING LOW-K DIELECTRIC FILMS 有权

    公开(公告)号：US20230094180A1

    公开(公告)日：2023-03-30

    申请号：US18074849

    申请日：2022-12-05

    Applicant: Applied Materials, Inc.

    Inventor： Shaunak Mukherjee ,  Kang Sub Yim ,  Deenesh Padhi ,  Abhijit A. Kangude ,  Rahul Rajeev ,  Shubham Chowdhuri

    IPC: H01L21/02

    Abstract: Exemplary methods of forming a silicon-and-carbon-containing material may include flowing a silicon-and-carbon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the silicon-and-carbon-containing precursor. The plasma may be formed at a frequency above 15 MHz. The methods may include depositing a silicon-and-carbon-containing material on the substrate. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant below or about 3.0.

    GASBOX FOR SEMICONDUCTOR PROCESSING CHAMBER
    7.
    发明申请
    GASBOX FOR SEMICONDUCTOR PROCESSING CHAMBER 有权

    公开(公告)号：US20220130687A1

    公开(公告)日：2022-04-28

    申请号：US17077674

    申请日：2020-10-22

    Applicant: Applied Materials, Inc.

    Inventor： Rahul Rajeev ,  Yunzhe Yang ,  Abhijit A. Kangude ,  Kedar Joshi

    IPC: H01L21/67 ,  C23C16/50 ,  H01J37/32

    Abstract: Exemplary semiconductor processing chambers may include a gasbox including a first plate having a first surface and a second surface opposite to the first surface. The first plate of the gasbox may define a central aperture that extends from the first surface to the second surface. The first plate may define an annular recess in the second surface. The first plate may define a plurality of apertures extending from the first surface to the annular recess in the second surface. The gasbox may include a second plate characterized by an annular shape. The second plate may be coupled with the first plate at the annular recess to define a first plenum within the first plate.

    Systems and methods for depositing low-k dielectric films
    9.
    发明授权
    Systems and methods for depositing low-k dielectric films 有权

    公开(公告)号：US12198925B2

    公开(公告)日：2025-01-14

    申请号：US18074849

    申请日：2022-12-05

    Applicant: Applied Materials, Inc.

    Inventor： Shaunak Mukherjee ,  Kang Sub Yim ,  Deenesh Padhi ,  Abhijit A. Kangude ,  Rahul Rajeev ,  Shubham Chowdhuri

    IPC: H01L21/02

    Abstract: Exemplary methods of forming a silicon-and-carbon-containing material may include flowing a silicon-and-carbon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the silicon-and-carbon-containing precursor. The plasma may be formed at a frequency above 15 MHz. The methods may include depositing a silicon-and-carbon-containing material on the substrate. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant below or about 3.0.

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