公开(公告)号：US20240363304A1

公开(公告)日：2024-10-31

申请号：US18509205

申请日：2023-11-14

Applicant: FEI Company

Inventor： Jaroslav Velcovský ,  Remco T. J. P. Geurts ,  Marek Melichar

IPC: H01J37/10 ,  H01J37/04 ,  H01J37/22 ,  H01J37/305

CPC classification number: H01J37/10 ,  H01J37/045 ,  H01J37/22 ,  H01J37/3053 ,  H01J2237/006

Abstract: Surface contamination and debris deposition associated with laser ablation or ion beam milling is reduced by combining a directed flow to a workpiece with suction at a suitable vacuum pressure. The vacuum pressure is typically selected so that any contaminants or debris have relatively short mean free paths to avoid build-up on distant surfaces in a vacuum chamber. A shutter can be used to shield portions of a charged-particle-beam optical column during processing. Processing at vacuum pressures associated with the relatively short MFPs can be combined with processing at vacuum pressures associated with relatively long MFPs to provide coarse and fine milling or ablation.

公开(公告)号：US20240290576A1

公开(公告)日：2024-08-29

申请号：US18464744

申请日：2023-09-11

Applicant: NISSIN ION EQUIPMENT CO., LTD.

Inventor： Yuya HIRAI ,  Weijang ZHAO

IPC: H01J37/317 ,  H01J37/08 ,  H01J37/30

CPC classification number: H01J37/3171 ,  H01J37/08 ,  H01J37/3002 ,  H01J2237/006

Abstract: An ion beam extraction electrode includes a first member including a first beam passage hole through which an ion beam passes, a second member positioned opposite the first member and including a second beam passage hole through which the ion beam passes, a heater partially or fully disposed between the first member and the second member, and a gas shutoff member that blocks a flow of a gas from entering a space between the first member and the second member.

公开(公告)号：US12007344B2

公开(公告)日：2024-06-11

申请号：US18347918

申请日：2023-07-06

Applicant: FIBICS INCORPORATED

Inventor： Michael William Phaneuf ,  Ken Guillaume Lagarec ,  Andrew John Murray

IPC: G01N23/2255 ,  G01N1/28 ,  G01N23/20025 ,  H01J37/20

CPC classification number: G01N23/2255 ,  G01N1/286 ,  G01N23/20025 ,  H01J37/20 ,  H01J2237/006 ,  H01J2237/31745 ,  H01J2237/31749

Abstract: A method for attaching a prepared sample to a carrier in a focused ion beam chamber. The method includes reducing a temperature within the chamber to substantially below room temperature followed by moving the prepared sample adjacent to a substrate carrier surface. The temperature can be lowered sufficiently to establish a cryogenic condition in the chamber. Attachment of the prepared sample to the substrate carrier is done by controlling the focused ion beam to raster a target area of the surface in the absence of a gas deposition precursor, to sputter material onto the base of the sample and the substrate carrier surface, thereby binding the prepared sample to the substrate carrier.

公开(公告)号：US20240096592A1

公开(公告)日：2024-03-21

申请号：US17945338

申请日：2022-09-15

Applicant: APPLIED MATERIALS ISRAEL LTD.

Inventor： Yehuda Zur

IPC: H01J37/317 ,  C23C14/22 ,  H01J37/147

CPC classification number: H01J37/3178 ,  C23C14/221 ,  H01J37/1474 ,  H01J2237/006 ,  H01L21/28568

Abstract: A gas injection nozzle that includes an elongated gas conduit that comprises: a first gas conduit segment configured to be coupled with a gas reservoir; a second gas conduit segment fluidly coupled to the first gas conduit segment and defining a downward curve of the elongated gas conduit; a third gas conduit segment defining an upward curve of the elongated gas conduit that extends to a sealed end and is disposed in a mirrored relationship with at least a portion of the second gas conduit; and a central gas conduit segment coupled between the second and third gas conduit segments, the central gas conduit segment having a first aperture formed in an upper surface of the central gas conduit and a second aperture, larger than the first aperture, formed in a lower surface of the central gas conduit directly across from the first aperture, wherein the elongated gas conduit has a first diameter along a portion of its length that includes at least the second, third and central gas conduit segments and wherein the central gas conduit segment includes a substantially horizontal portion that extends on each side of the first and second apertures for a distance that is at least twice the first diameter of the gas conduit.

公开(公告)号：US11869744B2

公开(公告)日：2024-01-09

申请号：US17570481

申请日：2022-01-07

Applicant: Protochips, Inc.

Inventor： Franklin Stampley Walden, II ,  John Damiano, Jr. ,  Daniel Stephen Gardiner ,  William Bradford Carpenter

IPC: H01J37/20 ,  G01F1/34 ,  G05D7/06

CPC classification number: H01J37/20 ,  G01F1/34 ,  G05D7/0635 ,  H01J2237/006 ,  H01J2237/26

Abstract: A fluid metering system for gas independent pressure and flow control through an electron microscope sample holder includes: a pressure control system that supplies gas; an inlet line providing gas from the pressure control system to the sample holder; an outlet line receiving gas from the sample holder; and a variable leak valve that controls gas flow in the outlet line. The gas flows from an upstream tank of the pressure control system through the sample holder and variable leak valve to a downstream tank of the pressure control system due to the pressure difference of the two tanks as the variable leak valve meters flow in the outlet line. Flow rates are established by monitoring pressure changes at source and collection tanks of known volumes with gas independent pressure gauges. A method of directing the gas flow to a residual gas analyzer (RGA) is also presented.

公开(公告)号：US20230420224A1

公开(公告)日：2023-12-28

申请号：US18230722

申请日：2023-08-07

Applicant: Carl Zeiss Microscopy GmbH

Inventor： Andreas Schmaunz

IPC: H01J37/32 ,  H01J37/145 ,  H01J37/244 ,  H01J37/28 ,  H01J37/304

CPC classification number: H01J37/32449 ,  H01J37/145 ,  H01J37/244 ,  H01J37/28 ,  H01J37/304 ,  H01J2237/006 ,  H01J2237/2065

Abstract: Operating a gas feed device for a particle beam apparatus includes predetermining a flow rate of a precursor through an outlet of a precursor reservoir containing the precursor to be fed onto an object, loading a temperature of the precursor reservoir, the temperature being associated with the predetermined flow rate, from a database into a control unit, setting a temperature of the precursor reservoir to the temperature loaded from the database using a temperature setting unit, and determining at least one functional parameter of the precursor reservoir depending on the flow rate and the temperature, loaded from the database, using the control unit and informing a user of the gas feed device about the determined functional parameter. Informing the user of the gas feed device about the functional parameter may include displaying the functional parameter on a display unit, outputting an optical signal, or outputting an acoustic signal.

公开(公告)号：US11827973B2

公开(公告)日：2023-11-28

申请号：US17688613

申请日：2022-03-07

Applicant: ENTEGRIS, INC.

Inventor： Oleg Byl ,  Ying Tang ,  Joseph R. Despres ,  Joseph D. Sweeney ,  Sharad N. Yedave

IPC: C23C14/48 ,  C23C14/56 ,  H01J37/08 ,  H01J37/317

CPC classification number: C23C14/48 ,  C23C14/564 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/022

Abstract: The current disclosure is directed to methods and assemblies configured to deliver a mixture of germanium tetrafluoride (GeF4) and hydrogen (H2) gases to an ion implantation apparatus, so H2 is present in an amount in the range of 25%-67% (volume) of the gas mixture, or the GeF4 and H2 are present in a volume ratio (GeF4:H2) in the range of 3:1 to 33:67. The use of the H2 gas in an amount in mixture or relative to the GeF4 gas prevents the volatilization of cathode material, thereby improving performance and lifetime of the ion implantation apparatus. Gas mixtures according to the disclosure also result in a significant Ge+ current gain and W+ peak reduction during au ion implantation procedure.

公开(公告)号：US11726050B2

公开(公告)日：2023-08-15

申请号：US17843329

申请日：2022-06-17

Applicant: FIBICS INCORPORATED

Inventor： Michael William Phaneuf ,  Ken Guillaume Lagarec ,  Andrew John Murray

IPC: G01N23/2255 ,  G01N23/20025 ,  G01N1/28 ,  H01J37/20

CPC classification number: G01N23/2255 ,  G01N1/286 ,  G01N23/20025 ,  H01J37/20 ,  H01J2237/006 ,  H01J2237/31745 ,  H01J2237/31749

Abstract: A carrier grid with integrated gas delivery system for use in a charged particle beam system (CPB). The carrier grid has a body with an internal reservoir for storing a gas. A post extends from the body with an end for supporting a sample to be operated upon, and an outlet tip extends from the end of the post. A channel extends from the reservoir, through the post and ends in the outlet tip, where the outlet tip seals the stored gas in the body. Cutting the outlet tip near its base, with a focused ion beam (FIB) by example, will open the channel to the CPB chamber, allowing the prestored gas within the reservoir to escape. A FIB or electron beam directed at the junction of the sample positioned near the post will cause deposition and subsequent attachment of the sample to the post in presence of the gas.

公开(公告)号：US20190108972A1

公开(公告)日：2019-04-11

申请号：US16152439

申请日：2018-10-05

Applicant: Axcelis Technologies, Inc.

Inventor： Teng-Chao David Tao ,  David Allen Kirkwood

IPC: H01J37/305 ,  H01J37/317 ,  H01J37/05

CPC classification number: H01J37/3053 ,  H01J37/05 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/022 ,  H01J2237/057 ,  H01J2237/31701

Abstract: An ion implantation system has an ion source configured form an ion beam and an angular energy filter (AEF) having an AEF region. A gas source passivates and/or etches a film residing on the AEF by a reaction of the film with a gas. The gas can be an oxidizing gas or a fluorine-containing gas. The gas source can selectively supply the gas to the AEF region concurrent with a formation of the ion beam. The AEF is heated to assist in the passivation and/or etching of the film by the gas. The heat can originate from the ion beam, and/or from an auxiliary heater associated with the AEF. A manifold distributor can be operably coupled to the gas source and configured to supply the gas to one or more AEF electrodes.

公开(公告)号：US20190103279A1

公开(公告)日：2019-04-04

申请号：US15958560

申请日：2018-04-20

Applicant: Mattson Technology, Inc.

Inventor： Michael X. Yang ,  Hua Chung ,  Xinliang Lu

IPC: H01L21/30 ,  H01L21/02 ,  H01L21/311 ,  H01L21/302 ,  C23C16/452

CPC classification number: H01L21/3003 ,  B01D67/009 ,  C23C16/452 ,  C23F1/12 ,  H01J37/321 ,  H01J37/32743 ,  H01J37/32899 ,  H01J2237/006 ,  H01J2237/332 ,  H01L21/02118 ,  H01L21/02252 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/0271 ,  H01L21/302 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/76826

Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, a method can include performing an organic radical based surface treatment process on a workpiece. The organic radical based surface treatment process can include generating one or more species in a first chamber. The surface treatment process can include mixing one or more hydrocarbon molecules with the species to create a mixture. The mixture can include one or more organic radicals. The surface treatment process can include exposing a semiconductor material on the workpiece to the mixture in a second chamber.