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    SEMICONDUCTOR REACTION CHAMBER
    6.
    发明公开
    SEMICONDUCTOR REACTION CHAMBER 审中-公开

    公开(公告)号：US20230230803A1

    公开(公告)日：2023-07-20

    申请号：US18190930

    申请日：2023-03-27

    申请人： BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.

    发明人： Xingfei MAO ,  Gang WEI ,  Wei WANG ,  Guodong CHEN

    IPC分类号： H01J37/32 ,  H01J65/04 ,  H01J37/22

    CPC分类号： H01J37/32119 ,  H01J65/044 ,  H01J37/22 ,  H01L21/0273

    摘要： A semiconductor reaction chamber includes a chamber body, a dielectric window, a gas inlet member, a carrier, an upper radio frequency assembly, and a plurality of ultraviolet light generation devices. The dielectric window is arranged at a top of the chamber body. The gas inlet member is arranged at a center position of the dielectric window and configured to introduce a process gas into the chamber body. The carrier is arranged inside the chamber body and configured to carry a to-be-processed wafer. The upper radio frequency assembly is arranged above the chamber body and configured to ionize the process gas introduced into the chamber body to generate a plasma and first ultraviolet light. The plurality of ultraviolet light generation devices is arranged between the dielectric window and the carrier and around the gas inlet member and configured to generate second ultraviolet light radiating toward the carrier.

    ELECTRON MICROSCOPE WITH IMPROVED IMAGING RESOLUTION
    7.
    发明公开
    ELECTRON MICROSCOPE WITH IMPROVED IMAGING RESOLUTION 审中-公开

    公开(公告)号：US20230207254A1

    公开(公告)日：2023-06-29

    申请号：US18171750

    申请日：2023-02-21

    申请人： FEI Company

    发明人： Alexander Henstra ,  Pleun Dona

    IPC分类号： H01J37/153 ,  H01J37/244 ,  H01J37/22

    CPC分类号： H01J37/153 ,  H01J37/244 ,  H01J37/22 ,  H01J2237/1534

    摘要： Disclosed herein are electron microscopes with improved imaging. An example electron microscope at least includes an illumination system, for directing a beam of electrons to irradiate a specimen, an elongate beam conduit, through which the beam of electrons is directed; a multipole lens assembly configured as an aberration corrector, and a detector for detecting radiation emanating from the specimen in response to said irradiation, wherein at least a portion of said elongate beam conduit extends at least through said aberration corrector and has a composite structure comprising intermixed electrically insulating material and electrically conductive material, wherein the elongate beam conduit has an electrical conductivity σ and a thickness t, with σt

    Charged Particle Beam Device and Sample Observation Method
    8.
    发明公开
    Charged Particle Beam Device and Sample Observation Method 审中-公开

    公开(公告)号：US20230197400A1

    公开(公告)日：2023-06-22

    申请号：US17922823

    申请日：2020-06-12

    申请人： Hitachi High-Tech Corporation

    发明人： Yusuke SEKI ,  Mitsuhiro NAKAMURA ,  Keisuke TANUMA

    IPC分类号： H01J37/20 ,  H01J37/22

    CPC分类号： H01J37/20 ,  H01J37/22 ,  H01J2237/28 ,  H01J2237/153

    摘要： A dielectric microscopic observation is possible, which suppresses image flow regardless of scanning speed. There are provided a sample chamber 120 holding a sample 200 between a first insulating layer 121 on which a conductive layer 211 to be irradiated with a charged particle beam is laminated and a second insulating layer 122, an amplifier 141 that amplifies a potential change that occurs at an interface between the first insulating layer and the sample as the conductive layer is irradiated with the charged particle beam, and outputs the amplified result as a measurement signal, a main control unit 142 that converts the measurement signal from the amplifier into image data, and corrects the image data with a deconvolution filter 302 to generate corrected image data, a display unit 144 including an observation image display unit 501 and a filter adjustment unit 502 that displays setting information of the deconvolution filter, and an information processing device that displays the corrected image data on the observation image display unit, and when the setting information of the deconvolution filter displayed in the filter adjustment unit is changed, adjusts the deconvolution filter according to the changed setting information.

    Electron Beam Image Acquisition Apparatus, and Electron Beam Image Acquisition Method
    10.
    发明申请
    Electron Beam Image Acquisition Apparatus, and Electron Beam Image Acquisition Method 审中-公开

    公开(公告)号：US20190096631A1

    公开(公告)日：2019-03-28

    申请号：US16132618

    申请日：2018-09-17

    申请人： NUFLARE TECHNOLOGY, INC.

    发明人： Hidekazu Takekoshi

    IPC分类号： H01J37/26 ,  H01J37/22 ,  G06T7/00

    CPC分类号： H01J37/268 ,  G06T7/001 ,  H01J37/22 ,  H01J37/265 ,  H01J37/28 ,  H01J2237/082 ,  H01J2237/1501 ,  H01J2237/2817

    摘要： An electron beam image acquisition apparatus includes a deflector to deflect an electron beam, a deflection control system to control the deflector, a measurement circuitry to measure, while moving a stage for placing thereon a substrate on which a figure pattern is formed, an edge position of a mark pattern arranged on the stage by scanning the mark pattern with an electron beam, a delay time calculation circuitry to calculate, using information on the edge position, a deflection control delay time which is a delay time to start deflection control occurring in the deflection control system, a correction circuitry to correct, using the deflection control delay time, a deflection position of the electron beam, and an image acquisition mechanism to include the deflector and acquire an image of the figure pattern at a corrected deflection position on the substrate.