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公开(公告)号:US12080513B2
公开(公告)日:2024-09-03
申请号:US17633176
申请日:2020-08-08
Applicant: ASML Netherlands B.V.
Inventor: Wei Fang , Lingling Pu , Bo Wang , Zhonghua Dong , Yongxin Wang
IPC: H01J37/22 , G01N23/2251 , G06T5/50 , G06T5/77 , G06T5/80 , H01J37/24 , H01J37/244 , H01J37/28
CPC classification number: H01J37/222 , G01N23/2251 , G06T5/50 , G06T5/77 , G06T5/80 , H01J37/244 , H01J37/28 , G01N2223/07 , G01N2223/401 , G01N2223/418 , G01N2223/507 , G06T2207/10061 , G06T2207/20081 , H01J2237/2448 , H01J2237/2806 , H01J2237/2809 , H01J2237/2817
Abstract: An improved apparatus and method for enhancing an image, and more particularly an apparatus and method for enhancing an image through cross-talk cancellation in a multiple charged-particle beam inspection are disclosed. An improved method for enhancing an image includes acquiring a first image signal of a plurality of image signals from a detector of a multi-beam inspection system. The first image signal corresponds to a detected signal from a first region of the detector on which electrons of a first secondary electron beam and of a second secondary electron beam are incident. The method includes reducing, from the first image signal, cross-talk contamination originating from the second secondary electron beam using a relationship between the first image signal and beam intensities associated with the first secondary electron beam and the second secondary electron beam. The method further includes generating a first image corresponding to first secondary electron beam after reduction.
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2.
公开(公告)号:US12057336B2
公开(公告)日:2024-08-06
申请号:US17190885
申请日:2021-03-03
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Shashank Shrikant Agashe , Gaurav Kumar , Sathyanarayanan Kulasekaran , Chanwoo Park , Yunje Cho
IPC: H01L21/67 , G01N23/2251 , G06T7/00 , G06T17/00 , G06T19/20
CPC classification number: H01L21/67288 , G01N23/2251 , G06T7/001 , G06T17/00 , G06T19/20 , G01N2223/07 , G01N2223/418 , G01N2223/507 , G01N2223/6116 , G01N2223/646 , G06T2207/10061 , G06T2207/30148 , G06T2219/2016
Abstract: The present disclosure relates to a method for estimating heights of defects in a wafer. The method comprises creating an un-calibrated 3D model of a defect in a wafer, determining one or more attributes associated with the un-calibrated 3D model, transforming the un-calibrated 3D model to a calibrated 3D model, and estimating a height of the defect using the calibrated 3D model. Creating an un-calibrated 3D model corresponds to a defect present in a wafer based on a plurality of Scanning Electron Microscope (SEM) images of the defect. Transforming the un-calibrated 3D model to a calibrated 3D model uses a scaling factor corresponding to the determined one or more attributes associated with the un-calibrated 3D model. A height of the defect is estimated based on the calibrated 3D model of the defect.
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公开(公告)号:US20240255449A1
公开(公告)日:2024-08-01
申请号:US18103238
申请日:2023-01-30
Applicant: APPLIED MATERIALS ISRAEL LTD.
Inventor: Doron Girmonsky , Uri Hadar , Dror Shemesh , Michal Eilon
IPC: G01N23/2252
CPC classification number: G01N23/2252 , G01N2223/079 , G01N2223/507 , G01N2223/6116
Abstract: Disclosed herein is a system for non-destructive classification of specimens. The system includes an e-beam source, an X-ray measurement module, and a computational module. The e-beam source is configured to project e-beams on a specimen at one or more e-beam landing energies, so as to penetrate the specimen and induce emission of X-rays. The X-ray measurement module is configured to measure the emitted X-rays. The computational module is configured to process the measurement data to obtain an energy signature of at least one target substance included in the specimen and classify the inspected specimen based on the obtained energy signature and one or more reference energy signatures pertaining to one or more reference specimens, respectively.
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4.
公开(公告)号:US20240170249A1
公开(公告)日:2024-05-23
申请号:US17991168
申请日:2022-11-21
Inventor: Pieter Kruit , John Breuer
IPC: H01J37/153 , G01N23/2251 , H01J37/147 , H01J37/28
CPC classification number: H01J37/153 , G01N23/2251 , H01J37/1472 , H01J37/28 , G01N2223/079 , G01N2223/418 , G01N2223/507 , H01J2237/151 , H01J2237/1534
Abstract: A corrector for correcting aberrations of a charged particle beam in a charged particle beam device is described. The corrector includes a plurality of wires configured to be in a plane perpendicular to a beam axis. The wires forming two or more openings for passing of the charged particle beam through the two or more openings. The plurality of wires includes at least a first wire having a first connector configured to provide a first voltage to the first wire and a second wire having a second connector configured to provide a second voltage to the second wire. The second voltage being different than the first voltage.
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公开(公告)号:US11942303B2
公开(公告)日:2024-03-26
申请号:US17359365
申请日:2019-12-06
Applicant: ASML Netherlands B.V.
Inventor: Yan Ren , Albertus Victor Gerardus Mangnus
IPC: H01J37/147 , G01N23/2251 , H01J37/09 , H01J37/145 , H01J37/20 , H01J37/28
CPC classification number: H01J37/1478 , G01N23/2251 , H01J37/09 , H01J37/145 , H01J37/1474 , H01J37/20 , H01J37/28 , G01N2223/07 , G01N2223/418 , G01N2223/507 , H01J2237/0455 , H01J2237/04926 , H01J2237/103 , H01J2237/151 , H01J2237/226 , H01J2237/2611
Abstract: Embodiments consistent with the disclosure herein include methods and a multi-beam apparatus configured to emit charged-particle beams for imaging a top and side of a structure of a sample, including: a deflector array including a first deflector and configured to receive a first charged-particle beam and a second charged-particle beam; a blocking plate configured to block one of the first charged-particle beam and the second charged-particle beam; and a controller having circuitry and configured to change the configuration of the apparatus to transition between a first mode and a second mode. In the first mode, the deflector array directs the second charged-particle beam to the top of the structure, and the blocking plate blocks the first charged-particle beam. And in the second mode, the first deflector deflects the first charged-particle beam to the side of the structure, and the blocking plate blocks the second charged-particle beam.
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公开(公告)号:US20240077437A1
公开(公告)日:2024-03-07
申请号:US17902926
申请日:2022-09-05
Applicant: BRUKER TECHNOLOGIES LTD.
Inventor: Alexander Krokhmal , Asher Peled
IPC: G01N23/223
CPC classification number: G01N23/223 , G01N2223/076 , G01N2223/3306 , G01N2223/507
Abstract: A system for X-ray analysis, includes: (a) an X-ray analysis assembly configured to (i) direct an X-ray beam to impinge on a surface of a sample, and (ii) receive fluorescence radiation excited from the sample in response to the impinged X-ray beam, (b) a target assembly including measurement targets: placed in an optical path between the X-ray analysis assembly and the sample, and configured to move between (i) one or more first positions in which one or more of the measurement targets are positioned in the X-ray beam, and (ii) one or more second positions in which the optical path is unobstructed by the target assembly, and (c) a processor, configured to control movement of the target assembly between the first and second positions, for alternately, (i) monitoring properties of the X-ray beam using the measurement targets, and (ii) performing the X-ray analysis at a measurement site of the sample.
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公开(公告)号:US20240068967A1
公开(公告)日:2024-02-29
申请号:US17896067
申请日:2022-08-25
Applicant: KLA Corporation
Inventor: Bo Xiong , Hedong Yang , Kay Wang
IPC: G01N23/2251 , G06T7/00 , G06T7/11 , G06T7/13 , G06T7/70
CPC classification number: G01N23/2251 , G06T7/0006 , G06T7/11 , G06T7/13 , G06T7/70 , G01N2223/07 , G01N2223/418 , G01N2223/507 , G01N2223/6116 , G06T2207/10061 , G06T2207/20132 , G06T2207/30148
Abstract: Parameters from an inspection image representing mechanical vibrations and electromagnetic interference can be determined. An X-direction vibration spectrum can be determined based on the X-direction offsets. A Y-direction vibration spectrum can be determined based on the Y-direction offsets. The determinations can be based on a swath image of a workpiece, such as a semiconductor wafer or reticle.
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公开(公告)号:US11714204B2
公开(公告)日:2023-08-01
申请号:US17307128
申请日:2021-05-04
Applicant: SHENZHEN XPECTVISION TECHNOLOGY CO., LTD.
Inventor: Peiyan Cao , Yurun Liu
IPC: G01T1/24 , G01N23/223
CPC classification number: G01T1/247 , G01N23/223 , G01N2223/507
Abstract: Disclosed herein is a detector, comprising: a plurality of pixels, each pixel configured to count numbers of X-ray photons incident thereon whose energy falls in a plurality of bins, within a period of time; an X-ray absorption layer; wherein the X-ray absorption layer comprises an electrical contact within each of the pixels, and a focusing electrode surrounding the electrical contact and configured to direct to the electrical contact charge carriers generated by an X-ray photon incident within confines of the focusing electrodes; and wherein the detector is configured to add the numbers of X-ray photons for the bins of the same energy range counted by all the pixels.
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9.
公开(公告)号:US20230161053A1
公开(公告)日:2023-05-25
申请号:US17917200
申请日:2020-04-30
Applicant: Hitachi High-Tech Corporation
Inventor: Akira TAKANO , Keiichi TANAKA
IPC: G01T1/16 , G01N23/2251
CPC classification number: G01T1/1606 , G01N23/2251 , G01N2223/07 , G01N2223/418 , G01N2223/507
Abstract: This radiation analysis system comprises a transition edge sensor that detects radiation, a current detection mechanism that detects a current flowing in the transition edge sensor, and a computer sub-system that processes a current detection signal from the current detection mechanism. The computer sub-system is characterized by executing: a process for calculating a baseline current of the current detection signal; a process for calculating a wave height value of a signal pulse produced in the detection signal when the transition edge sensor has detected radiation; a process for acquiring correlation data based on the baseline current and the wave height value; and a process for correcting the wave height value of the signal pulse, or an energy value calculated from the wave height value, on the basis of the correlation data and the baseline current from before production of the signal pulse when radiation having unknown energy is detected by the transition edge sensor.
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公开(公告)号:US12092594B2
公开(公告)日:2024-09-17
申请号:US17756917
申请日:2020-11-18
Applicant: Schlumberger Technology Corporation
Inventor: Jill F. Geddes , Trevor Lloyd Hughes , Evgeny Borisovich Barmatov
IPC: G01N23/223 , G01B15/02
CPC classification number: G01N23/223 , G01B15/02 , G01N2223/076 , G01N2223/507 , G01N2223/61 , G01N2223/633
Abstract: A method for measuring average thickness of a metal or alloy coating on a metal or alloy substrate using an X-ray fluorescence (XRF) spectrometer is used when the coating has an uneven surface at different distances from a measurement window of the XRF spectrometer. The method includes measuring elemental composition of the coating or substrate using the XRF spectrometer and obtaining the average thickness of the coating using a calibration relationship between coating thickness and elemental composition of the coating or substrate. The metal or alloy coating may be a metal or alloy coating of a plurality of outer armor wires wrapped around a cable. The method may be used to analyze coating thickness changes over time or along the length of the cable, or to analyze a corrosive environment in order to choose optimal material for a metal or alloy coating.
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