摘要:
Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).
摘要:
An X-ray fluorescence spectrometer of the present invention includes: a determination module (21) configured to determine, with respect to every one of measurement lines that correspond to secondary X-rays having intensities to be measured, whether or not a ratio of a theoretical intensity in thin film calculated on the basis of an assumed thickness and known contents of respective components to a theoretical intensity in bulk calculated on the basis of the known contents of the respective components exceeds a predetermined threshold; and a saturation thickness quantification module (23) configured to, according to a positive determination by the determination module (21), calculate a saturation thickness with respect to each of the measurement lines, at which the theoretical intensity saturates, on the basis of the known contents of the respective components and to adopt a largest saturation thickness as a quantitative value of a thickness.
摘要:
A method is provided of measuring the mass thickness of a target sample for use in electron microscopy. Reference data are obtained which is representative of the X-rays (28) generated within a reference sample (12) when a particle beam (7) is caused to impinge upon a region (14) of the reference sample (12). The region (14) is of a predetermined thickness of less than 300 nm and has a predetermined composition. The particle beam (7) is caused to impinge upon a region (18) of the target sample (16). The resulting X-rays (29) generated within the target sample (16) are monitored (27) so as to produce monitored data. Output data are then calculated based upon the monitored data and the reference data, the output data including the mass thickness of the region (18) of the target sample (16).
摘要:
A method for measurement of the thickness of thin layers or determination of an element concentration of a measurement object. A primary beam is directed from an X-ray radiation source onto the measurement object. A secondary radiation emitted by the measurement object is detected by a detector and is relayed to an evaluation device. The primary beam is moved within a grid surface which is divided into grid partial surfaces as well as subdivided into at least one line and at least one column. For each grid partial surface a primary beam is directed onto the grid surface. A measuring spot of the primary beam fills at least the grid point. A lateral dimension of the measurement surface is detected and compared to the size of the measuring spot of the primary beam appearing on the measurement object, for size determination of the measurement surface of the measurement object.
摘要:
A method may include positioning at least one calibration disk in a computed tomography (CT) scanner and positioning a pellet in the CT scanner. The at least one calibration disk and the pellet may both be made of a same powder exhibiting a known density. The method may further include scanning the at least one calibration disk and the pellet using the CT scanner to obtain one or more CT images of the pellet and the at least one calibration disk, and comparing a density of the pellet with the known density of the at least one calibration disk based on the one or more CT images.
摘要:
The invention relates to a method for performing an x-ray fluorescence analysis, in which method a primary radiation (16) is directed at a specimen (12) by an x-radiation source (14) and in which method a secondary radiation (18) emitted by the specimen (12) is detected by a detector (20) and evaluated by means of an evaluating unit (21), wherein at least one filter (23) having at least one filter layer (25) forming a filter plane is brought into the beam path of the secondary radiation (18) and acts as a band-pass filter in dependence on an angle α of the filter layer (25) to the secondary radiation (18) and an interfering wavelength of the secondary radiation (18) is coupled out by Bragg reflection, the angle α of the filter layer (25) of the filter (23) is set by means of a setting apparatus (31) to reflect at least one interfering wavelength of the secondary radiation (18) by Bragg reflection, and the coupled-out wavelength of the secondary radiation (18) is detected by a second detector (32) and the signals determined therefrom are forwarded to the evaluating unit (21).
摘要:
This power module substrate includes a copper plate that is formed of copper or a copper alloy and is laminated on a surface of a ceramic substrate 11; a nitride layer 31 that is formed on the surface of the ceramic substrate 11 between the copper plate and the ceramic substrate 11; and an Ag—Cu eutectic structure layer 32 having a thickness of 15 μm or less that is formed between the nitride layer and the copper plate.
摘要:
A method of measuring a thickness of a Fe—Zn alloy phase included in the Fe—Zn alloy coating of the galvannealed steel sheet includes: an X-ray irradiation process of irradiating the galvannealed steel sheet with the incident X-rays; and an X-ray detection process of detecting the diffracted X-rays obtained in the X-ray irradiation process, derived from a Γ·Γ1 phase, a δ1 phase, and a ζ phase included in the Fe—Zn alloy coating with a crystal lattice spacing d of 1.5 Å or higher.
摘要:
A system is provided. The system includes a conveyor apparatus configured for conveying a material and a water content measurement system positioned about the conveyor apparatus for determining water content in the material. A dimension characteristic measurement system for detecting one or more dimension characteristics of the material is provided and a computer device is configured to manipulate data received from the water content measurement system and the dimension characteristic measurement system to determine a water content of the material.
摘要:
Provided is a versatile method of determining the number of layers of a two-dimensional atomic layer thin film as compared with conventional methods. An electron beam is radiated to a two-dimensional thin film atomic structure having an unknown number of layers to determine the number of layers based on an intensity of reflected electrons or secondary electrons generated thereby. In particular, this method is effective for determining the number of layers of graphene.