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    X-RAY BASED EVALUATION OF A STATUS OF A STRUCTURE OF A SUBSTRATE
    1.
    发明申请
    X-RAY BASED EVALUATION OF A STATUS OF A STRUCTURE OF A SUBSTRATE 有权

    公开(公告)号：US20210181128A1

    公开(公告)日：2021-06-17

    申请号：US17153765

    申请日：2021-01-20

    Applicant: APPLIED MATERIALS ISRAEL LTD.

    Inventor： Dror Shemesh

    IPC: G01N23/2252 ,  G01N23/2206

    Abstract: A method for x-ray based evaluation of a status of a structure of a substrate, the method may include acquiring an electron image of a region of the substrate, the region comprises the structure; acquiring an x-ray image of the structure; and evaluating the status of the structure, wherein the evaluating is based at least on a number of x-ray photons that were emitted from the structure.

    X-RAY BASED EVALUATION OF A STATUS OF A STRUCTURE OF A SUBSTRATE
    4.
    发明申请
    X-RAY BASED EVALUATION OF A STATUS OF A STRUCTURE OF A SUBSTRATE 有权

    公开(公告)号：US20210033550A1

    公开(公告)日：2021-02-04

    申请号：US16525037

    申请日：2019-07-29

    Applicant: APPLIED MATERIALS ISRAEL LTD.

    Inventor： Dror Shemesh

    IPC: G01N23/2252 ,  G01N23/2206

    Abstract: A method for x-ray based evaluation of a status of a structure of a substrate, the method may include acquiring an electron image of a region of the substrate, the region comprises the structure; acquiring an x-ray image of the structure; and evaluating the status of the structure, wherein the evaluating is based at least on a number of x-ray photons that were emitted from the structure.

    NON-DESTRUCTIVE CLASSIFICATION OF SPECIMENS BASED ON ENERGY SIGNATURE MEASUREMENTS
    5.
    发明公开
    NON-DESTRUCTIVE CLASSIFICATION OF SPECIMENS BASED ON ENERGY SIGNATURE MEASUREMENTS 审中-公开

    公开(公告)号：US20240255449A1

    公开(公告)日：2024-08-01

    申请号：US18103238

    申请日：2023-01-30

    Applicant: APPLIED MATERIALS ISRAEL LTD.

    Inventor： Doron Girmonsky ,  Uri Hadar ,  Dror Shemesh ,  Michal Eilon

    IPC: G01N23/2252

    CPC classification number: G01N23/2252 ,  G01N2223/079 ,  G01N2223/507 ,  G01N2223/6116

    Abstract: Disclosed herein is a system for non-destructive classification of specimens. The system includes an e-beam source, an X-ray measurement module, and a computational module. The e-beam source is configured to project e-beams on a specimen at one or more e-beam landing energies, so as to penetrate the specimen and induce emission of X-rays. The X-ray measurement module is configured to measure the emitted X-rays. The computational module is configured to process the measurement data to obtain an energy signature of at least one target substance included in the specimen and classify the inspected specimen based on the obtained energy signature and one or more reference energy signatures pertaining to one or more reference specimens, respectively.

    Z-PROFILING OF WAFERS BASED ON X-RAY MEASUREMENTS
    6.
    发明公开
    Z-PROFILING OF WAFERS BASED ON X-RAY MEASUREMENTS 审中-公开

    公开(公告)号：US20240085356A1

    公开(公告)日：2024-03-14

    申请号：US17901705

    申请日：2022-09-01

    Applicant: APPLIED MATERIALS ISRAEL LTD.

    Inventor： Doron Girmonsky ,  Michal Eilon ,  Dror Shemesh ,  Uri Hadar

    IPC: G01N23/2252 ,  G06N3/08

    CPC classification number: G01N23/2252 ,  G06N3/08

    Abstract: A computer-based method for non-destructive z-profiling of samples. The method includes: a measurement operation and a data analysis operation. The measurement operation includes, for each of a plurality of landing energies: (i) projecting an electron beam on a sample at a respective landing energy, such that light-emitting interactions between electrons from the electron beam and the sample occur within a respective probed region of the sample, which is centered about a respective depth; and (ii) measuring the emitted light to obtain an optical emission data set of the sample. The data analysis operation includes obtaining from the measured optical emission data sets a concentration map quantifying a dependence of a concentration of a material, which the sample comprises, on at least the depth.

    Defect examination on a semiconductor specimen
    9.
    发明授权
    Defect examination on a semiconductor specimen 有权

    公开(公告)号：US11961221B2

    公开(公告)日：2024-04-16

    申请号：US17496616

    申请日：2021-10-07

    Applicant: Applied Materials Israel Ltd.

    Inventor： Dror Shemesh ,  Miriam Brook

    IPC: G06T7/00 ,  G01N21/95 ,  G01N21/88

    CPC classification number: G06T7/0008 ,  G01N21/9501 ,  G01N2021/8887 ,  G06T2207/20081 ,  G06T2207/30148

    Abstract: There is provided a system and method of runtime defect examination of a semiconductor specimen, comprising obtaining a first image representative of at least part of the semiconductor specimen, the first image acquired by an examination tool configured with a first focus plane; estimating whether the first image is in focus using a machine learning (ML) model, wherein the ML model is previously trained for classifying images into focused images and defocused images; upon an estimation that the first image is out of focus, performing focus calibration on the examination tool to select a second focus plane associated with an optimal focus score; and obtaining a second image acquired by the examination tool configured with the second focus plane, and estimating whether the second image is in focus using the ML model. The second image, upon being estimated as being in focus, is usable for defect examination on the specimen.

    DEPTH-PROFILING OF SAMPLES BASED ON X-RAY MEASUREMENTS
    10.
    发明公开
    DEPTH-PROFILING OF SAMPLES BASED ON X-RAY MEASUREMENTS 审中-公开

    公开(公告)号：US20240085351A1

    公开(公告)日：2024-03-14

    申请号：US18231567

    申请日：2023-08-08

    Applicant: APPLIED MATERIALS ISRAEL LTD.

    Inventor： Doron Girmonsky ,  Michal Eilon ,  Dror Shemesh ,  Uri Hadar

    IPC: G01N23/083 ,  G06T7/00

    CPC classification number: G01N23/083 ,  G06T7/001 ,  G06T2207/10116 ,  G06T2207/20084

    Abstract: Disclosed herein is a system for non-destructive depth-profiling of samples. The system includes an electron beam source, a light sensor, and processing circuitry. The electron beam source configured to project e-beams on an inspected sample at each of a plurality of landing energies, which induce X-ray emitting interactions within each of a plurality of probed regions in the inspected sample, respectively, whose depth is determined by the landing energy. The light sensor is configured to measure the emitted X-ray light to obtain optical emission data sets pertaining to each of the probed regions, respectively. The processing circuitry is configured to determine a set of structural parameters, characterizing an internal geometry and/or a composition of the inspected sample, based on the measured optical emission data sets and taking into account reference data indicative of an intended design of the inspected sample.

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