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公开(公告)号：US20240363451A1
公开(公告)日：2024-10-31
申请号：US18766961
申请日：2024-07-09
CPC分类号： H01L22/12 , G01N21/9505
摘要： A method of qualifying semiconductor wafer processing includes: illuminating a semiconductor wafer simultaneously with source light having wavelengths in a plurality of wavebands, including at least a first waveband and a second waveband, the second waveband being different from the first waveband; separating light reflected from the semiconductor wafer as a result of said illuminating, the separating dividing the reflected light according to waveband; generating a first image of the semiconductor wafer based on reflected light separated into the first waveband; and, generating a second image of the semiconductor wafer base on reflected light separated into the second waveband.
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公开(公告)号：US12117404B2
公开(公告)日：2024-10-15
申请号：US17864519
申请日：2022-07-14
发明人： Lei (Alex) Zhou , Dandan (Emily) Zhang , Roberto Francisco-Yi Lu , Rong Zhang , Qing (Carrie) Zhou
CPC分类号： G01N21/95 , G01N21/8806 , G01N2021/8841 , G01N2021/9511
摘要： A product inspection system includes an image acquisition system having a camera generating an inspection image of a product arranged between a plurality of mirrors. The inspection image has a plurality of sub images of different sides of the product. The inspection system has a calibration member with a plurality of correction patterns on different sides; the camera receives light from the calibration member reflected by the mirrors to generate a calibration image of the calibration member. A computer of the product inspection system receives the inspection image and the calibration image and determines a relative mirror position relationship between the mirrors. The computer forms a single spliced image of the product.
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公开(公告)号：US20240328962A1
公开(公告)日：2024-10-03
申请号：US18443453
申请日：2024-02-16
申请人： KONICA MINOLTA, INC.
发明人： Ryuichi YOSHIDA
IPC分类号： G01N21/95
CPC分类号： G01N21/9515
摘要： A defect sample for surface inspection includes: a substrate that is flexible and has at least one protruded and/or recessed pseudo defect formed on a surface thereof.
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公开(公告)号：US20240328960A1
公开(公告)日：2024-10-03
申请号：US18608169
申请日：2024-03-18
申请人： Robert Bosch GmbH
发明人： Peter Ebersbach
IPC分类号： G01N21/95
CPC分类号： G01N21/9501 , G01N2201/126
摘要： A method for optimizing a measurement pattern of measurement points for a semiconductor wafer includes (i) obtaining a plurality of measured values with associated measurement points and timestamps, (ii) partitioning the semiconductor wafer into zones, wherein the zones are characterized in that measured values whose measurement positions are within the respective zone have the same characteristic, (iii) determining a variation of the measured values for each of the zones along a predetermined time period, the timestamps of which are within the predetermined time window, and (iv) defining the measurement pattern, wherein, depending on the variations, a measurement point density is defined for each of the zones, in particular a higher measurement point density is selected in the zones with higher variation along the time.
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公开(公告)号：US12104279B2
公开(公告)日：2024-10-01
申请号：US17649983
申请日：2022-02-04
发明人： Fumimasa Horikiri
CPC分类号： C30B29/406 , C01B21/0632 , G01N21/95 , H01L21/02389 , C01P2002/82 , C01P2006/40 , C30B25/02 , G01N2021/8477
摘要： There is provided a nitride crystal substrate constituted by group-III nitride crystal, containing n-type impurities, with an absorption coefficient α being approximately expressed by equation (1) by a least squares method in a wavelength range of at least 1 μm or more and 3.3 μm or less.
α
=
N
e
K
λ
a
(
where
1.5
×
10
-
19
≤
K
≤
6.
×
10
-
19
,
a
=
3
)
,
(
1
)
here, a wavelength is λ (μm), an absorption coefficient of the nitride crystal substrate at 27° C. is α (cm−1), a carrier concentration in the nitride crystal substrate is Ne (cm−3), and K and a are constants, wherein an error of an actually measured absorption coefficient with respect to the absorption coefficient α obtained from equation (1) at a wavelength of 2 μm is within +0.1α, and in a reflection spectrum measured by irradiating the nitride crystal substrate with infrared light, there is no peak with a peak top within a wavenumber range of 1,200 cm−1 or more and 1,500 cm−1 or less.-
公开(公告)号：US20240319096A1
公开(公告)日：2024-09-26
申请号：US18611299
申请日：2024-03-20
申请人： KLA Corporation
CPC分类号： G01N21/645 , G01N21/8806 , G01N21/9501 , G01N2021/6471 , G01N2021/8848
摘要： A beam of light is directed at a workpiece that includes a low-k dielectric material, which causes fluorescence emission from the low-k dielectric material. The workpiece is imaged during fluorescence emission. The imaging can use an optical filter in an imaging path of the beam of light that selects at least one wavelength from 300 nm to 900 nm.
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公开(公告)号：US12100132B2
公开(公告)日：2024-09-24
申请号：US17504475
申请日：2021-10-18
申请人： KLA CORPORATION
发明人： Jan Lauber , Jason Kirkwood
CPC分类号： G06T7/0006 , G01N21/9501 , G06T5/20 , G06T5/40 , G06T7/12 , G06T7/13 , G06T7/90 , G06T2207/20021 , G06T2207/30148
摘要： A location of grid lines in an image of a laser-annealed semiconductor wafer is determined. An area covered by the grid lines can be filled using a new gray value. The new gray value can be based on a second gray scale value of a neighborhood around the area. The neighborhood is outside of the area covered by the grid lines.
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公开(公告)号：US12092587B2
公开(公告)日：2024-09-17
申请号：US17765595
申请日：2021-04-30
发明人： Haijin Wang , Chuan Wang , Tian Lan , Jianmin Wu , Yu Feng , Hong Wang , Yu Wang , Fan Zhang , Jiawei Ren , Jing Xue , Jianfeng Zeng
IPC分类号： G01N21/95
CPC分类号： G01N21/95 , G01N2021/9511
摘要： The present disclosure provides a method for processing defect information of a product, which includes the following steps of: acquiring defect information on a current film layer and defect information on historical film layers; determining whether defect information exists at a target location of the historical film layer if defect information exists at a target location of the current film layer; if defect information exists for a corresponding location to the target location in at least one of the historical film layers, deleting the defect information detected at the target location in the current film layer; and if no defect information exists for the target location in any of the historical film layers, retaining the defect information detected at the target location in the current film layer. According to this, for the defect information on the current film layer, only the defect information caused by factors of the current film layer may be retained, and the defect information caused by the historical film layers will not be retained, and thus, on the one hand, the stored data volume may be reduced, and on the other hand, the complexity of subsequent analysis of defect information may be simplified.
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公开(公告)号：US20240302284A1
公开(公告)日：2024-09-12
申请号：US18435632
申请日：2024-02-07
申请人： NOVA LTD.
发明人： Yonatan OREN
CPC分类号： G01N21/65 , G01N21/9501 , G03F7/70616 , G01N2201/0231 , G01N2201/06113
摘要： A method and system are presented for use in measuring one or more characteristics of patterned structures. The method comprises: performing measurements on a patterned structure by illuminating the structure with exciting light to cause Raman scattering of one or more excited regions of the pattern structure, while applying a controlled change of at least temperature condition of the patterned structure, and detecting the Raman scattering, and generating corresponding measured data indicative of a temperature dependence of the detected Raman scattering; and analyzing the measured data and generating data indicative of spatial profile of one or more properties of the patterned structure.
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公开(公告)号：US12085518B2
公开(公告)日：2024-09-10
申请号：US18448766
申请日：2023-08-11
发明人： Chih-Yu Wang , Hsi-Cheng Hsu
CPC分类号： G01N21/9505 , H01L21/50 , H01L22/12 , H01L2021/60112 , H01L2021/60292
摘要： Systems and methods are provided for monitoring wafer bonding and for detecting or determining defects in a wafer bond formed between two semiconductor wafers. A wafer bonding system includes a camera configured to monitor bonding between two semiconductor wafers. Wafer bonding defect detection circuitry receives video data from the camera, and detects a bonding defect based on the received video data.
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