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公开(公告)号：US20240355577A1
公开(公告)日：2024-10-24
申请号：US18683071
申请日：2022-08-11
申请人： ELDICO SCIENTIFIC AG
发明人： Gunther STEINFELD , Harald NIEBEL , Christiaan VAN DEN BERG , Alexander VAN VEEN , Tomi TUOHIMAA
IPC分类号： H01J37/21 , H01J37/14 , H01J37/147 , H01J37/153 , H01J37/26 , H01J37/295
CPC分类号： H01J37/21 , H01J37/14 , H01J37/1474 , H01J37/153 , H01J37/265 , H01J37/2955 , H01J2237/002 , H01J2237/0453 , H01J2237/1532
摘要： A charged-particle beam device for charged-particle crystallography of a crystalline sample comprises a charged-particle source for generating a charged-particle beam to be radiated onto a sample and a charged-particle-optical system downstream the charged-particle source, which is configured to form in a diffraction mode a substantially parallel charged-particle beam at a predefined sample position and in an imaging mode a focused charged-particle beam having a focus at the predefined sample position. The charged-particle-optical system comprises a charged-particle zoom lens system consisting of a first magnetic lens, a second magnetic lens downstream the first magnetic lens and a third magnetic lens downstream the second magnetic lens, wherein at least the second magnetic lens, preferably each one of the first, the second and the third magnetic lens has a variable focal length. The charged-particle-optical system further comprises a single beam limiting aperture with a fixed aperture diameter arranged at a fixed position between the second magnetic lens and the third magnetic lens for limiting the diameter of the charged-particle beam at the sample position. The charged-particle-optical system is configured such that the diameter of the charged-particle beam at the sample position is in a range between 100 nanometer and 1000 nanometer, in particular between 220 nanometer and 250 nanometer, in the diffraction mode, and in a range between 10 nanometer and 200 nanometer in the imaging mode.
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公开(公告)号：US20240339287A1
公开(公告)日：2024-10-10
申请号：US18131271
申请日：2023-04-05
发明人： Alexandre Likhanskii , Nirbhav Singh Chopra , Peter F. Kurunczi , Anthony Renau , Joseph C. Olson , Frank Sinclair
IPC分类号： H01J37/05 , H01J37/147 , H01J37/317
CPC分类号： H01J37/05 , H01J37/1472 , H01J37/3171 , H01J37/12 , H01J2237/053 , H01J2237/057 , H01J2237/1207 , H01J2237/2505
摘要： An apparatus may include an electrodynamic mass analysis (EDMA) assembly disposed downstream from the convergent ion beam assembly. The EDMA assembly may include a first stage, comprising a first upper electrode, disposed above a beam axis, and a first lower electrode, disposed below the beam axis, opposite the first upper electrode. The EDMA assembly may also include a second stage, disposed downstream of the first stage and comprising a second upper electrode, disposed above the beam axis, and a second lower electrode, disposed below the beam axis. The EDMA assembly may further include a deflection assembly, disposed between the first stage and the second stage, the deflection assembly comprising a blocker, disposed along the beam axis, an upper deflection electrode, disposed on a first side of the blocker, and a lower deflection electrode, disposed on a second side of the blocker.
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公开(公告)号：US20240321547A1
公开(公告)日：2024-09-26
申请号：US18580269
申请日：2022-07-05
IPC分类号： H01J37/22 , H01J37/10 , H01J37/147 , H01J37/244 , H01J37/317
CPC分类号： H01J37/226 , H01J37/10 , H01J37/1474 , H01J37/244 , H01J37/3177 , H01J2237/0453 , H01J2237/2443 , H01J2237/24592
摘要： Charged-particle optical devices are disclosed. In one arrangement, a device includes a charged particle column and a light sensor. An objective lens array projects a plurality of beams towards a sample and has a plurality of electrodes arranged along a path of the plurality of beams. A plurality of scintillators receives signal particles emitted from the sample. Light is generated in response to the received signal particles. A light guiding arrangement guides light generated by the scintillators to the light sensor. The light guiding arrangement includes a mirror defining a plurality of apertures to allow passage of the plurality of beams through the mirror towards the sample.
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公开(公告)号：US20240304410A1
公开(公告)日：2024-09-12
申请号：US18600212
申请日：2024-03-08
发明人： Erik Essers
IPC分类号： H01J37/26 , H01J37/14 , H01J37/147 , H01J37/244
CPC分类号： H01J37/26 , H01J37/14 , H01J37/147 , H01J37/244 , H01J2237/049 , H01J2237/141 , H01J2237/1415 , H01J2237/2443
摘要： An electron beam microscope comprises an electron beam source, a beam tube, a magnetic objective lens, an object holder, a scintillator arrangement, a detector arrangement and a potential supply system. The power supply system supplies: i) the object holder with a potential U1; ii) the beam tube with a potential U2; iii) a pole end of the objective lens with a potential U3; iv) a scintillator body of the scintillator arrangement with a potential; and v) a light detector of the detector arrangement with a potential U5, such that:
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公开(公告)号：US12087541B2
公开(公告)日：2024-09-10
申请号：US17460381
申请日：2021-08-30
发明人： Weiming Ren , Shuai Li , Xuedong Liu , Zhongwei Chen
IPC分类号： H01J37/28 , H01J37/12 , H01J37/147
CPC分类号： H01J37/28 , H01J37/12 , H01J37/1472 , H01J37/1477 , H01J2237/04924 , H01J2237/083 , H01J2237/1205 , H01J2237/1516 , H01J2237/2817
摘要： A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit changes a single electron source into a virtual multi-source array, a primary projection imaging system projects the array to form plural probe spots on the sample, and a condenser lens adjusts the currents of the plural probe spots. In the source-conversion unit, the image-forming means is on the upstream of the beamlet-limit means, and thereby generating less scattered electrons. The image-forming means not only forms the virtual multi-source array, but also compensates the off-axis aberrations of the plurality of probe spots.
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公开(公告)号：US20240297012A1
公开(公告)日：2024-09-05
申请号：US17791013
申请日：2020-01-22
发明人： Atsuko Shintani , Makoto Suzuki , Hiroki Kawada
IPC分类号： H01J37/22 , G01N23/2251 , H01J37/147 , H01J37/244
CPC分类号： H01J37/222 , G01N23/2251 , H01J37/1474 , H01J37/244 , H01J2237/3045
摘要： System and method for preventing blurring of an image in a scanning direction caused by a signal processing delay of a detector, of a charged particle beam device. The charged particle beam device is configured to calibrate first image data generated based on a detection signal output from a detector when the sample is two-dimensionally scanned with the charged particle beam, to generate second image data, in which the second image data is generated using n first signal profiles each of which corresponds to a signal strength distribution in a first direction and which are extracted from the first image data, and a power spectral density P(f) (f: spatial frequency) of a window function corresponding to the signal processing delay of the detector.
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7.发明授权公开(公告)号：US12080510B2
公开(公告)日：2024-09-03
申请号：US18378421
申请日：2023-10-10
申请人： mi2-factory GmbH
IPC分类号： H01J37/05 , H01J37/147 , H01J37/317
CPC分类号： H01J37/05 , H01J37/1472 , H01J37/317 , H01J37/3171 , H01J37/3172 , H01J2237/002 , H01J2237/047 , H01J2237/057 , H01J2237/31705 , H01J2237/3171
摘要： A method of monitoring compliance with filter specification during the implantation of ions into a substrate reading a signature of the filter and comparing the read signature with filter signatures stored in a database to identify properties of the filter including at least one of a maximum allowable temperature of the filter and a maximum allowable accumulated ion dose of the filter. The temperature and/or the accumulated ion dose of the filter is measured while ions are implanted into the substrate by an ion beam passing through the filter. The implantation is terminated when the measured temperature or accumulated ion dose of the filter reaches or exceeds the maximum allowable threshold.
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8.发明公开公开(公告)号：US20240282547A1
公开(公告)日：2024-08-22
申请号：US18647061
申请日：2024-04-26
发明人： Koichi ISHII , Atsushi ANDO
IPC分类号： H01J37/153 , H01J37/147 , H01J37/244 , H01J37/28 , H01J37/317
CPC分类号： H01J37/153 , H01J37/1474 , H01J37/244 , H01J37/3177 , H01J37/28 , H01J2237/1501 , H01J2237/2448 , H01J2237/2817 , H01J2237/31776
摘要： A multi-electron beam image acquisition apparatus includes a multiple primary electron beams forming device to form multiple primary electron beams, a first-deflector to scan the multiple-primary electron beams over a target object by deflecting the multiple-primary electron beams, a corrector to correct a beam-array-distribution-shape of multiple-secondary electron beams emitted from the target object irradiated with the multiple-primary electron beams, a second-deflector to deflect the multiple-secondary electron beams whose beam-array-distribution-shape has been corrected, a detector to detect the deflected multiple-secondary electron beams, and a deflection control circuit to control applying, to the second-deflector, a superimposed potential obtained by superimposing a deflection potential which cancels out a position movement of the multiple-secondary electron beams moved along with scanning the multiple-primary electron beams on a correction potential which corrects a distortion being generated due to correcting the beam-array-distribution-shape of the multiple-secondary electron beams and being dependent on a deflection amount for scanning.
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9.发明公开公开(公告)号：US20240274396A1
公开(公告)日：2024-08-15
申请号：US18110284
申请日：2023-02-15
IPC分类号： H01J37/147 , H01J37/09 , H01J37/153 , H01J37/28
CPC分类号： H01J37/1472 , H01J37/09 , H01J37/153 , H01J37/28 , H01J2237/022 , H01J2237/1516 , H01J2237/1534 , H01J2237/24514
摘要： A method of forming a multipole device (100) for influencing an electron beam (11) is provided. The method is carried out in an electron beam apparatus (200) that comprises an aperture body (110) having at least one aperture opening (112). The method comprises directing the electron beam (11) onto two or more surface portions of the aperture body (110) on two or more sides of the at least one aperture opening (112) to generate an electron beam-induced deposition pattern (120) configured to act as a multipole in a charged state, particularly configured to act as a quadrupole, a hexapole and/or an octupole. The electron beam-induced deposition pattern (120) can be an electron beam-induced carbon or carbonaceous pattern. Further provided are methods of influencing an electron beam in an electron beam apparatus, particularly with a multipole device as described herein. Further provided is a multipole device for influencing an electron beam in an electron beam apparatus in a predetermined manner.
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公开(公告)号：US12057290B2
公开(公告)日：2024-08-06
申请号：US17572767
申请日：2022-01-11
发明人： Hans Fritz , Ingo Mueller
IPC分类号： H01J37/317 , H01J37/10 , H01J37/145 , H01J37/147 , H01J37/26 , H01J37/302
CPC分类号： H01J37/3177 , H01J37/10 , H01J37/145 , H01J37/147 , H01J37/263 , H01J37/3023 , H01J2237/0453 , H01J2237/04926
摘要： A method includes operating a multiple particle beam system at different working points. The numerical aperture can be set for each of the working points in such a way that the resolution of the multiple particle beam system is optimal. In the process, the beam pitch between adjacent individual particle beams on the sample to be scanned is kept constant as a boundary condition. There are no mechanical reconfigurations of the system whatsoever for the purposes of varying the numerical aperture.
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