公开(公告)号：US11923169B2

公开(公告)日：2024-03-05

申请号：US17168897

申请日：2021-02-05

Applicant: Axcelis Technologies, Inc.

Inventor： Causon Ko-Chuan Jen ,  Shu Satoh ,  Genise Bonacorsi ,  William Bintz

IPC: H01J37/317 ,  H01J37/08

CPC classification number: H01J37/3171 ,  H01J37/08 ,  H01J2237/0048 ,  H01J2237/022 ,  H01J2237/055 ,  H01J2237/31705

Abstract: A method for implanting high charge state ions into a workpiece while mitigating trace metal contamination includes generating desired ions at a first charge state from a desired species in an ion source, as well as generating trace metal ions of a contaminant species in a first ion beam. A charge-to-mass ratio of the desired ions and the trace metal ions is equal. The desired ions and trace metal ions are extracted from the ion source. At least one electron stripped from the desired ions to define a second ion beam of the desired ions at a second charge state and the trace metal ions. Only the desired ions from the second ion beam are selectively passed only through a charge selector to define a final ion beam of the desired ions at the second charge state and no trace metal ions, and the desired ions of the second charge state are implanted into a workpiece.

公开(公告)号：US20240055217A1

公开(公告)日：2024-02-15

申请号：US18378421

申请日：2023-10-10

Applicant: mi2-factory GmbH

Inventor： Florian KRIPPENDORF ,  Constantin CSATO

IPC: H01J37/05 ,  H01J37/317 ,  H01J37/147

CPC classification number: H01J37/05 ,  H01J37/3171 ,  H01J37/317 ,  H01J37/3172 ,  H01J37/1472 ,  H01J2237/3171 ,  H01J2237/047 ,  H01J2237/002 ,  H01J2237/057 ,  H01J2237/31705

Abstract: A method of monitoring compliance with filter specification during the implantation of ions into a substrate reading a signature of the filter and comparing the read signature with filter signatures stored in a database to identify properties of the filter including at least one of a maximum allowable temperature of the filter and a maximum allowable accumulated ion dose of the filter. The temperature and/or the accumulated ion dose of the filter is measured while ions are implanted into the substrate by an ion beam passing through the filter. The implantation is terminated when the measured temperature or accumulated ion dose of the filter reaches or exceeds the maximum allowable threshold.

公开(公告)号：US20230235449A1

公开(公告)日：2023-07-27

申请号：US18084705

申请日：2022-12-20

Applicant: Axcelis Technologies, Inc.

Inventor： David M. Burtner ,  Neil J. Bassom

IPC: C23C14/48 ,  C23C14/06 ,  H01J37/317

CPC classification number: C23C14/48 ,  C23C14/0605 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/31705

Abstract: An ion source for an ion implantation system is configured to form an ion beam from a predetermined species along a beamline, where the ion beam is at an initial energy. A deceleration component is configured to decelerate the ion beam to a final energy that is less than the initial energy. A workpiece support is configured to support a workpiece along a workpiece plane downstream of the deceleration component along the beamline. A beamline component is positioned downstream of the deceleration component along the beamline. The beamline component has a feature that is at least partially impinged by the ion beam, and where the feature has a surface having a predetermined angle of incidence with respect to the ion beam. The predetermined angle of incidence provides a predetermined sputter yield of the ion beam at the final energy that mitigates deposition of the ion species on the beamline component.

公开(公告)号：US09865422B2

公开(公告)日：2018-01-09

申请号：US14961021

申请日：2015-12-07

Applicant: Nissin Ion Equipment Co., Ltd.

Inventor： Thomas N. Horsky ,  Sami K. Hahto

IPC: H01J27/02 ,  H01J27/20 ,  C23C14/48 ,  H01J37/00

CPC classification number: H01J27/205 ,  C23C14/48 ,  H01J27/022 ,  H01J37/00 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/082 ,  H01J2237/31701 ,  H01J2237/31705

Abstract: A plasma generator for an ion implanter is provided. The plasma generator includes an ionization chamber for forming a plasma that is adapted to generate a plurality of ions and a plurality of electrons. An interior surface of the ionization chamber is exposed to the plasma and constructed from a first non-metallic material. The plasma generator also includes a thermionic emitter including at least one surface exposed to the plasma. The thermionic emitter is constructed from a second non-metallic material. The plasma generator further includes an exit aperture for extracting at least one of the plurality of ions or the plurality of electrons from the ionization chamber to form at least one of an ion beam or an electron flux. The ion beam or the electron flux comprises substantially no metal. The first and second non-metallic materials can be the same or different from each other.

公开(公告)号：US09583308B1

公开(公告)日：2017-02-28

申请号：US14837610

申请日：2015-08-27

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： William Davis Lee

IPC: H01J37/317 ,  H01J37/08 ,  H01J37/147

CPC classification number: H01J37/08 ,  H01J37/05 ,  H01J37/1472 ,  H01J37/3171 ,  H01J2237/053 ,  H01J2237/0815 ,  H01J2237/31701 ,  H01J2237/31705

Abstract: An apparatus, referred to as a light bath, is disposed in a beamline ion implantation system and is used to photoionize particles in the ion beam into positively charged particles. Once positively charged, these particles can be manipulated by the various components in the beamline ion implantation system. In certain embodiments, a positively biased electrode is disposed downstream from the light bath to repel the formerly non-positively charged particles away from the workpiece. In certain embodiments, the light bath is disposed within an existing component in the beamline ion implantation system, such as a deceleration stage or a Vertical Electrostatic Energy Filter. The light source emits light at a wavelength sufficiently short so as to ionize the non-positively charged particles. In certain embodiments, the wavelength is less than 250 nm.

Abstract translation: 称为光浴的装置设置在束线离子注入系统中，用于将离子束中的颗粒光电离成带正电的颗粒。 一旦带正电，这些颗粒可以通过束线离子注入系统中的各种组分来操纵。 在某些实施例中，正偏置的电极设置在光浴的下游，以将以前不带正电的颗粒排斥离开工件。 在某些实施例中，光浴设置在束线离子注入系统中的现有部件内，例如减速阶段或垂直静电能量过滤器。 光源以足够短的波长发射光，以使非正电荷的粒子离子化。 在某些实施方案中，波长小于250nm。

公开(公告)号：US20160071691A1

公开(公告)日：2016-03-10

申请号：US14437046

申请日：2014-12-05

Applicant: BOE Technology Group Co., Ltd.

Inventor： Hui TIAN

IPC: H01J37/30 ,  H01J37/317

CPC classification number: H01J37/3005 ,  H01J37/3171 ,  H01J2237/2445 ,  H01J2237/31703 ,  H01J2237/31705 ,  H01J2237/31711

Abstract: A method for monitoring ion implantation, comprising: a), providing a control piece and forming a mask layer; b), performing ion implantation process to implant a predetermined dose of impurity ions into the control piece, an area on the control piece uncovered by the mask layer being an impurity implantation area and an area on the control piece covered by the mask layer being an impurity non-implantation area; c), peeling off the mask layer from the control piece; d), performing oxidation treatment on the control piece; and e), respectively measuring thicknesses of the oxide layers on the impurity implantation area and the impurity non-implantation area of the control piece, and monitoring the impurity dose of the ion implantation on the basis of a ratio of the thickness of the oxide layer in the impurity implantation area to the thickness of the oxide layer in the impurity non-implantation area. By this method, it is possible to accurately monitor whether or not the dose of the implanted ions meets the predetermined requirement, and it is possible to effectively avoid the defects of incorrect monitor result caused by the variation of the intrinsic resistance of the semiconductor, improve the accuracy of the monitoring, and thus improve the performance and yield rate of the device.

Abstract translation: 一种用于监测离子注入的方法，包括：a）提供控制件并形成掩模层; b），执行离子注入工艺以将预定剂量的杂质离子注入到控制件中，由掩模层未覆盖的作为杂质注入区域的控制片上的区域和由掩模层覆盖的控制片上的区域是 杂质非植入区; c）从掩模层剥离掩模层; d）对控制件执行氧化处理; 和e），分别测量所述杂质注入区域上的氧化物层的厚度和所述控制件的杂质非注入区域，并且基于所述氧化物层的厚度的比率来监测所述离子注入的杂质剂量 在杂质注入区域中的杂质非注入区域中的氧化物层的厚度。 通过该方法，可以准确地监视注入离子的剂量是否满足规定的要求，能够有效地避免半导体固有电阻的变化引起的监视结果不正确的缺陷，提高 监控的准确性，从而提高设备的性能和产出率。

公开(公告)号：US20150129775A1

公开(公告)日：2015-05-14

申请号：US14536946

申请日：2014-11-10

Applicant: SEN Corporation

Inventor： Masateru Sato

IPC: H01J27/08 ,  H01J37/317

CPC classification number: H01J27/08 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/31705

Abstract: An ion generator is provided with: an arc chamber that is at least partially made up of a material containing carbon; a thermal electron emitter that emits thermal electrons into the arc chamber; and a gas introducer that introduces a source gas and a compound gas into the arc chamber. The source gas to be introduced into the arc chamber contains a halide gas, and the compound gas to be introduced into the arc chamber contains a compound having carbon atoms and hydrogen atoms.

Abstract translation: 离子发生器具有：至少部分由含碳材料组成的电弧室; 将热电子发射到电弧室中的热电子发射体; 以及将源气体和复合气体引入电弧室的气体导入器。 被引入电弧室的源气体含有卤化物气体，导入电弧室的化合物气体含有具有碳原子和氢原子的化合物。

公开(公告)号：US20150079705A1

公开(公告)日：2015-03-19

申请号：US14314642

申请日：2014-06-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sooman Kim ,  Wonseok Yang

IPC: H01L21/66

CPC classification number: H01J37/3171 ,  H01J2237/31705 ,  H01L21/265 ,  H01L22/12 ,  H01L22/14

Abstract: A method of measuring a contamination level of an ion implanting apparatus is disclosed. The method may include the steps of providing a wafer, forming a first layer on the wafer, injecting impurities into the first layer, preparing an analysis sample by removing the first layer and concurrently collecting the impurities captured in the first layer from the wafer, and analyzing the analysis sample.

Abstract translation: 公开了一种测量离子注入装置的污染水平的方法。 该方法可以包括以下步骤：提供晶片，在晶片上形成第一层，将杂质注入到第一层中，通过去除第一层并同时从晶片中收集在第一层中捕获的杂质来制备分析样品;以及 分析样本。

公开(公告)号：US20140034846A1

公开(公告)日：2014-02-06

申请号：US13566013

申请日：2012-08-03

Applicant: William D. Lee ,  William P. Reynolds ,  Stanley W. Stone

Inventor： William D. Lee ,  William P. Reynolds ,  Stanley W. Stone

IPC: G21K5/08

CPC classification number: H01J37/18 ,  H01J37/20 ,  H01J37/3171 ,  H01J2237/2001 ,  H01J2237/2002 ,  H01J2237/2007 ,  H01J2237/201 ,  H01J2237/204 ,  H01J2237/31705 ,  H01L21/02002 ,  H01L21/67109 ,  H01L21/67201 ,  H01L21/67213 ,  H01L21/67742 ,  H01L21/67766

Abstract: An ion implantation system provides ions to a workpiece positioned in a vacuum environment of a process chamber on a cooled chuck. A pre-chill station within the process chamber has a chilled workpiece support configured to cool the workpiece to a first temperature, and a post-heat station within the process chamber, has a heated workpiece support configured to heat the workpiece to a second temperature. The first temperature is lower than a process temperature, and the second temperature is greater than an external temperature. A workpiece transfer arm is further configured to concurrently transfer two or more workpieces between two or more of the chuck, a load lock chamber, the pre-chill station, and the post-heat station.

Abstract translation: 离子注入系统向位于冷却卡盘上的处理室的真空环境中的工件提供离子。 处理室内的预冷站具有构造成将工件冷却到第一温度的冷冻工件支撑件，并且处理室内的后加热站具有被配置为将工件加热到第二温度的加热工件支撑件。 第一温度低于处理温度，第二温度大于外部温度。 工件传送臂还被构造成在卡盘，加载锁定室，预冷站和后加热站之间的两个或更多个之间同时传送两个或更多个工件。

公开(公告)号：US20130181139A1

公开(公告)日：2013-07-18

申请号：US13348855

申请日：2012-01-12

Applicant: Edward C. EISNER ,  Bo H. VANDERBERG

Inventor： Edward C. EISNER ,  Bo H. VANDERBERG

IPC: G21K5/04 ,  G21K5/00 ,  G21K1/10

CPC classification number: H01J37/147 ,  G01K5/00 ,  H01J37/05 ,  H01J37/16 ,  H01J37/3171 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/31705

Abstract: Methods and apparatus for reducing energy contamination can be provided to a beam line assembly for ion implantation. Protrusions comprising surface areas and grooves therebetween can face neutral trajectories within a line of sight view from the workpiece within the beam line assembly. The protrusions can alter the course of the neutral trajectories away from the workpiece or cause alternate trajectories for further impacting before hitting a workpiece, and thereby, further reduce energy contamination for more sensitive implants.

Abstract translation: 可以将用于减少能量污染的方法和装置提供给用于离子注入的束线组件。 包括其间的表面区域和凹槽的突起可以在来自光束线组件内的工件的视线范围内面对中性轨迹。 突起可以改变中性轨迹离开工件的过程，或者在撞击工件之前引起交替的轨迹以进一步冲击，从而进一步减少更敏感的植入物的能量污染。