公开(公告)号：US11923169B2

公开(公告)日：2024-03-05

申请号：US17168897

申请日：2021-02-05

Applicant: Axcelis Technologies, Inc.

Inventor： Causon Ko-Chuan Jen ,  Shu Satoh ,  Genise Bonacorsi ,  William Bintz

IPC: H01J37/317 ,  H01J37/08

CPC classification number: H01J37/3171 ,  H01J37/08 ,  H01J2237/0048 ,  H01J2237/022 ,  H01J2237/055 ,  H01J2237/31705

Abstract: A method for implanting high charge state ions into a workpiece while mitigating trace metal contamination includes generating desired ions at a first charge state from a desired species in an ion source, as well as generating trace metal ions of a contaminant species in a first ion beam. A charge-to-mass ratio of the desired ions and the trace metal ions is equal. The desired ions and trace metal ions are extracted from the ion source. At least one electron stripped from the desired ions to define a second ion beam of the desired ions at a second charge state and the trace metal ions. Only the desired ions from the second ion beam are selectively passed only through a charge selector to define a final ion beam of the desired ions at the second charge state and no trace metal ions, and the desired ions of the second charge state are implanted into a workpiece.

公开(公告)号：US20210249222A1

公开(公告)日：2021-08-12

申请号：US17168897

申请日：2021-02-05

Applicant: Axcelis Technologies, Inc.

Inventor： Causon Ko-Chuan Jen ,  Shu Satoh ,  Genise Bonacorsi ,  William Bintz

IPC: H01J37/317 ,  H01J37/08

Abstract: A method for implanting high charge state ions into a workpiece while mitigating trace metal contamination includes generating desired ions at a first charge state from a desired species in an ion source, as well as generating trace metal ions of a contaminant species in a first ion beam. A charge-to-mass ratio of the desired ions and the trace metal ions is equal. The desired ions and trace metal ions are extracted from the ion source. At least one electron stripped from the desired ions to define a second ion beam of the desired ions at a second charge state and the trace metal ions. Only the desired ions from the second ion beam are selectively passed only through a charge selector to define a final ion beam of the desired ions at the second charge state and no trace metal ions, and the desired ions of the second charge state are implanted into a workpiece.