公开(公告)号：US12131881B2

公开(公告)日：2024-10-29

申请号：US17718976

申请日：2022-04-12

Applicant: JEOL Ltd.

Inventor： Takeshi Kaneko ,  Norihiro Okoshi ,  Yu Jimbo ,  Sang Tae Park

IPC: H01J37/22 ,  H01J37/244 ,  H01J37/28

CPC classification number: H01J37/22 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/022 ,  H01J2237/2802

Abstract: A contamination prevention irradiation device includes a generation unit and a mirror unit. The generation unit generates a laser beam. The mirror unit has a mirror surface for reflecting a laser beam. The laser beam reflected on the mirror surface is applied to a specimen disposed inside an objective lens. The laser beam is composed of a pulse train. Once a laser beam is applied to the specimen before observation of the specimen, deposition of contaminants on the specimen can be prevented for a predetermined subsequent period.

公开(公告)号：US20240274396A1

公开(公告)日：2024-08-15

申请号：US18110284

申请日：2023-02-15

Applicant: ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH

Inventor： John Breuer ,  Dominik Patrick Ehberger ,  Kathrin Mohler ,  Ivo Liska

IPC: H01J37/147 ,  H01J37/09 ,  H01J37/153 ,  H01J37/28

CPC classification number: H01J37/1472 ,  H01J37/09 ,  H01J37/153 ,  H01J37/28 ,  H01J2237/022 ,  H01J2237/1516 ,  H01J2237/1534 ,  H01J2237/24514

Abstract: A method of forming a multipole device (100) for influencing an electron beam (11) is provided. The method is carried out in an electron beam apparatus (200) that comprises an aperture body (110) having at least one aperture opening (112). The method comprises directing the electron beam (11) onto two or more surface portions of the aperture body (110) on two or more sides of the at least one aperture opening (112) to generate an electron beam-induced deposition pattern (120) configured to act as a multipole in a charged state, particularly configured to act as a quadrupole, a hexapole and/or an octupole. The electron beam-induced deposition pattern (120) can be an electron beam-induced carbon or carbonaceous pattern. Further provided are methods of influencing an electron beam in an electron beam apparatus, particularly with a multipole device as described herein. Further provided is a multipole device for influencing an electron beam in an electron beam apparatus in a predetermined manner.

公开(公告)号：US20240222068A1

公开(公告)日：2024-07-04

申请号：US18092103

申请日：2022-12-30

Applicant: FEI Company

Inventor： Jing Wang ,  Chad Rue ,  Aurelien Philippe Jean Maclou Botman

IPC: H01J37/26 ,  C23C16/06 ,  C23C16/44 ,  C23C16/455

CPC classification number: H01J37/261 ,  C23C16/06 ,  C23C16/4408 ,  C23C16/45559 ,  H01J2237/022 ,  H01J2237/186 ,  H01J2237/2001

Abstract: Methods include arranging a substrate in a vacuum chamber of a charged particle beam microscope, wherein the substrate is held at a cryogenic temperature, and depositing on the substrate at the cryogenic temperature a condensate precursor that is stored in a crucible, wherein the deposited condensate precursor forms a deposition layer on the substrate. An apparatus include a vacuum chamber configured to support a substrate, a condensate precursor system coupled to the vacuum chamber, wherein a vacuum pump is configured to draw a vacuum on a storage reservoir to reduce a vapor pressure build-up of a one or more volatile contaminants in the storage reservoir and thereby reduce a deposition of the one or more contaminants on the substrate during the condensing of the condensate precursor on the substrate. A condensate precursor can comprise a transition metal center comprising hafnium or osmium. Related deposition and cap layers are disclosed.

公开(公告)号：US11827973B2

公开(公告)日：2023-11-28

申请号：US17688613

申请日：2022-03-07

Applicant: ENTEGRIS, INC.

Inventor： Oleg Byl ,  Ying Tang ,  Joseph R. Despres ,  Joseph D. Sweeney ,  Sharad N. Yedave

IPC: C23C14/48 ,  C23C14/56 ,  H01J37/08 ,  H01J37/317

CPC classification number: C23C14/48 ,  C23C14/564 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/022

Abstract: The current disclosure is directed to methods and assemblies configured to deliver a mixture of germanium tetrafluoride (GeF4) and hydrogen (H2) gases to an ion implantation apparatus, so H2 is present in an amount in the range of 25%-67% (volume) of the gas mixture, or the GeF4 and H2 are present in a volume ratio (GeF4:H2) in the range of 3:1 to 33:67. The use of the H2 gas in an amount in mixture or relative to the GeF4 gas prevents the volatilization of cathode material, thereby improving performance and lifetime of the ion implantation apparatus. Gas mixtures according to the disclosure also result in a significant Ge+ current gain and W+ peak reduction during au ion implantation procedure.

公开(公告)号：US20230260738A1

公开(公告)日：2023-08-17

申请号：US18306381

申请日：2023-04-25

Applicant: Varian Medical Systems, Inc.

Inventor： Amir SHOJAEI ,  Philip ADAMSON ,  Flavio POEHLMANN-MARTINS

IPC: H01J37/08 ,  H01J37/16

CPC classification number: H01J37/08 ,  H01J37/16 ,  H01J2237/022 ,  H01J2237/166 ,  H01J2237/186 ,  H01J2237/1825

Abstract: An apparatus includes an ion chamber and a valve assembly. The ion chamber may include a housing enclosing a gas and one or more electrodes. The valve assembly is coupled to the ion chamber allowing control of replacement of the gas within the housing.

公开(公告)号：US20230245871A1

公开(公告)日：2023-08-03

申请号：US18103609

申请日：2023-01-31

Applicant: Tokyo Electron Limited

Inventor： Hiroshi NAGAIKE ,  Naoki SATO ,  Masato OBARA ,  Hideyuki OSADA

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/687 ,  B08B6/00 ,  B08B13/00 ,  B25J15/06

CPC classification number: H01J37/32871 ,  H01L21/67167 ,  H01L21/68707 ,  H01J37/32816 ,  B08B6/00 ,  B08B13/00 ,  B25J15/0616 ,  H01J2237/022 ,  H01J2237/184

Abstract: A substrate processing system includes a vacuum transfer module, a substrate processing module, an atmospheric transfer module, a load-lock module, at least one substrate transfer robot disposed in the vacuum transfer module and the atmospheric transfer module, and having at least one end effector, and a controller configured to control a particle removal operation. The particle removal operation includes transferring said at least one end effector in any one of the vacuum transfer module, the substrate processing module, the load-lock module, and the atmospheric transfer module in a state where at least one charging member that is charged is placed on said at least one end effector.

公开(公告)号：US20190108972A1

公开(公告)日：2019-04-11

申请号：US16152439

申请日：2018-10-05

Applicant: Axcelis Technologies, Inc.

Inventor： Teng-Chao David Tao ,  David Allen Kirkwood

IPC: H01J37/305 ,  H01J37/317 ,  H01J37/05

CPC classification number: H01J37/3053 ,  H01J37/05 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/022 ,  H01J2237/057 ,  H01J2237/31701

Abstract: An ion implantation system has an ion source configured form an ion beam and an angular energy filter (AEF) having an AEF region. A gas source passivates and/or etches a film residing on the AEF by a reaction of the film with a gas. The gas can be an oxidizing gas or a fluorine-containing gas. The gas source can selectively supply the gas to the AEF region concurrent with a formation of the ion beam. The AEF is heated to assist in the passivation and/or etching of the film by the gas. The heat can originate from the ion beam, and/or from an auxiliary heater associated with the AEF. A manifold distributor can be operably coupled to the gas source and configured to supply the gas to one or more AEF electrodes.

公开(公告)号：US10053773B2

公开(公告)日：2018-08-21

申请号：US14635978

申请日：2015-03-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroki Kishi ,  Mitsuru Hashimoto ,  Keiichi Shimoda ,  Eiichi Nishimura ,  Akitaka Shimizu

IPC: C23C14/00 ,  C23C14/32 ,  C23C16/44 ,  H01J37/305 ,  H01J37/32

CPC classification number: C23C16/4405 ,  C23C16/4401 ,  H01J37/3053 ,  H01J37/32091 ,  H01J37/32862 ,  H01J2237/022

Abstract: There is provided a cleaning method for removing a first deposit, formed on an upper electrode through an etching of a metal layer containing a metal, by using a plasma generated between a lower electrode of a lower structure and the upper electrode in a processing chamber of a plasma processing apparatus. The method includes a step of colliding ions with the first deposit formed on the upper electrode and a step of removing a second deposit, which is generated by said colliding and formed on the lower structure. Further, a cycle including the step of colliding and the step of removing is repeated multiple times.

公开(公告)号：US20180166261A1

公开(公告)日：2018-06-14

申请号：US15427336

申请日：2017-02-08

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Kevin Anglin ,  Brant S. Binns ,  Peter F. Kurunczi ,  Jay T. Scheuer ,  Eric Hermanson ,  Alexandre Likhanskii

IPC: H01J37/36 ,  B08B7/00 ,  B08B5/00

CPC classification number: H01J37/32862 ,  B08B5/00 ,  B08B7/0035 ,  H01J37/3171 ,  H01J37/36 ,  H01J2237/022 ,  H01J2237/057 ,  H01J2237/335

Abstract: Provided herein are approaches for in-situ plasma cleaning of one or more components of an ion implantation system. In one approach, the component may include a beam-line component, such as an energy purity module, having a plurality of conductive beam optics contained therein. The system further includes a power supply system for supplying a voltage and a current to the beam-line component during a cleaning mode, wherein the power supply system may include a first power plug coupled to a first subset of the plurality of conductive beam optics and a second power plug coupled to a second subset of the plurality of conductive beam optics. During a cleaning mode, the voltage and current may be simultaneously supplied and split between each of the first and second power plugs.

公开(公告)号：US09875877B2

公开(公告)日：2018-01-23

申请号：US15111907

申请日：2015-02-10

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Shinsuke Kawanishi ,  Yuusuke Oominami

IPC: G01N23/00 ,  H01J37/18 ,  H01J37/16 ,  H01J37/28

CPC classification number: H01J37/18 ,  H01J37/16 ,  H01J37/28 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/164 ,  H01J2237/182 ,  H01J2237/2605

Abstract: In a scanning electron microscope, an atmospheric pressure space having a specimen arranged therein and a vacuum space arranged on a charged particle optical system side are isolated from each other using an isolation film that transmits charged particle beams. The scanning electron microscope has an electron optical lens barrel, a chassis, and an isolation film. The electron optical lens barrel radiates a primary electron beam onto a specimen. The chassis is directly bonded to the inside of the electron optical lens barrel and has an inside that turns into a lower vacuum state than the inside of the electron optical lens barrel at least during the radiation of the primary electron beam. The isolation film isolates a space in an atmospheric pressure atmosphere having a specimen mounted therein and the inside of the chassis in a lower vacuum state, and transmits the primary charged particle beam.