-
公开(公告)号：US12094711B2
公开(公告)日：2024-09-17
申请号：US17650551
申请日：2022-02-10
发明人： Jengyi Yu , Samantha S. H. Tan , Yu Jiang , Hui-Jung Wu , Richard Wise , Yang Pan , Nader Shamma , Boris Volosskiy
IPC分类号： H01L21/311 , H01L21/02 , H01L21/027 , H01L21/033 , H01L21/3065 , H01L21/3213 , H01L21/465 , H01L21/467 , H01L21/67 , H01J37/32 , H01L21/68 , H01L21/683
CPC分类号： H01L21/0332 , H01L21/02175 , H01L21/02565 , H01L21/0262 , H01L21/0274 , H01L21/0337 , H01L21/3065 , H01L21/31116 , H01L21/31122 , H01L21/31138 , H01L21/31144 , H01L21/32136 , H01L21/32137 , H01L21/32139 , H01L21/465 , H01L21/467 , H01L21/67069 , H01L21/67167 , H01L21/67207 , H01J37/3211 , H01J37/32651 , H01J2237/186 , H01J2237/3321 , H01J2237/334 , H01L21/02205 , H01L21/02274 , H01L21/0228 , H01L21/68 , H01L21/6833
摘要： Tin oxide film on a semiconductor substrate is etched selectively with an etch selectivity of at least 10 in a presence of silicon (Si), carbon (C), or a carbon-containing material (e.g., photoresist) by exposing the substrate to a process gas comprising hydrogen (H2) and a hydrocarbon (e.g., at a hydrogen/hydrocarbon ratio of at least 5), such that a carbon-containing polymer is formed on the substrate. In some embodiments an apparatus for processing a semiconductor substrate includes a process chamber configured for housing the semiconductor substrate and a controller having program instructions on a non-transitory medium for causing selective etching of a tin oxide layer on a substrate in a presence of silicon, carbon, or a carbon-containing material by exposing the substrate to a plasma formed in a process gas that includes H2 and a hydrocarbon.
-
公开(公告)号：US12062567B2
公开(公告)日：2024-08-13
申请号：US16844764
申请日：2020-04-09
发明人： Zubin Huang , Rui Cheng , Diwakar Kedlaya , Satish Radhakrishnan , Anton V. Baryshnikov , Venkatanarayana Shankaramurthy , Karthik Janakiraman , Paul L. Brillhart , Badri N. Ramamurthi
IPC分类号： H01L21/683 , H01J37/32 , H01L21/67
CPC分类号： H01L21/6838 , H01J37/32724 , H01L21/67017 , H01L21/67167 , H01L21/67253 , H01J2237/186 , H01J2237/24585
摘要： Exemplary methods of semiconductor processing may include coupling a fluid conduit within a substrate support in a semiconductor processing chamber to a system foreline. The coupling may vacuum chuck a substrate with the substrate support. The methods may include flowing a gas into the fluid conduit. The methods may include maintaining a pressure between the substrate and the substrate support at a pressure higher than the pressure at the system foreline.
-
公开(公告)号：US12020895B2
公开(公告)日：2024-06-25
申请号：US17666385
申请日：2022-02-07
申请人： FEI Company
发明人： Jakub Kuba , John M. Mitchels , Jakub Drahotský , Michal Valík
CPC分类号： H01J37/185 , H01J37/28 , G01N1/42 , H01J2237/184 , H01J2237/186
摘要： Various approaches are provided for contamination-free vacuum transfer of samples. As one example, an apparatus includes a compartment configured to store multiple samples held by a cartridge removably coupled to the compartment, a sample port for transferring the cartridge between a charged particle system and a position within the compartment, and a valve configured to seal the compartment at vacuum pressure during transport of the multiple samples between charged particle systems. In this way, samples such as lamellae may be transferred between charged particle systems while maintaining the samples at vacuum pressure, thereby reducing the possibility of sample contamination during sample transfer.
-
公开(公告)号：US20230402268A1
公开(公告)日：2023-12-14
申请号：US17836657
申请日：2022-06-09
发明人： Songjae LEE , Masato ISHII , Martin TRUEMPER , Richard O. COLLINS , Martin Jeffrey SALINAS , Yong ZHENG , Anita ZHAO , Adele MARIADASS , Christophe MARCADAL , Henry BARANDICA , Ernesto J. ULLOA
CPC分类号： H01J37/32834 , H01J37/32449 , H01J37/32357 , H01J37/32899 , C23C14/022 , B08B7/0035 , B08B13/00 , H01J37/32825 , H01J2237/335 , H01J2237/186 , H01J2237/182
摘要： A plasma processing system for cleaning a substrate is provided. The plasma processing system includes a process chamber that includes: a chamber body enclosing an interior volume; and a substrate support disposed in the interior volume. The plasma processing system includes a vacuum pump; a first exhaust line fluidly coupled between the interior volume of the process chamber and the vacuum pump; and a second exhaust line fluidly coupled between the interior volume of the process chamber and the vacuum pump. The first exhaust line and the second exhaust line are arranged to provide alternative paths for the exhaust between the interior volume and the vacuum pump, and the first exhaust line has an internal diameter that is at least 50% smaller than the internal diameter of the second exhaust line.
-
公开(公告)号：US20230317480A1
公开(公告)日：2023-10-05
申请号：US18129473
申请日：2023-03-31
发明人： Masahiro DOGOME
IPC分类号： H01L21/67 , H01L21/677 , H01L21/687 , H01J37/32
CPC分类号： H01L21/67196 , H01L21/67739 , H01L21/68792 , H01J37/32513 , H01J37/32899 , H01J2237/166 , H01J2237/186
摘要： A gate valve apparatus and a semiconductor manufacturing apparatus, in which a volume of a drive portion for driving a valve body is reduced, are provided. The gate valve apparatus includes a housing having an opening, a valve body configured to open and close the opening, and a drive portion configured to drive the valve body, in which the drive portion includes a first crankshaft including a first input shaft rotatably supported by a side wall of the housing and a first output shaft rotatably supported by the valve body, a second crankshaft including a second input shaft rotatably supported by the side wall of the housing and a second output shaft rotatably supported by the valve body, a rotation transmission portion configured to transmit rotation of the first input shaft to the second input shaft, and an actuator configured to rotate the first input shaft.
-
公开(公告)号：US20230227971A1
公开(公告)日：2023-07-20
申请号：US18080935
申请日：2022-12-14
发明人： JONGBUN HAN , JUHEE LEE , Suk Won JUNG , Sang Jin HAN
CPC分类号： C23C16/4405 , H01J37/32449 , H01J37/32862 , H01J37/32816 , B08B5/00 , B08B13/00 , H01J2237/24585 , H01J2237/186 , H01J37/32633 , H01J2237/182
摘要： An embodiment provides a deposition apparatus, including: a process chamber; a residual gas analyzer connected to the process chamber; a cleansing gas supplier connected to the process chamber; and a driver that is connected to the residual gas analyzer and the cleansing gas supplier and controls the residual gas analyzer and the cleansing gas supplier.
-
7.发明申请公开(公告)号：US20170140894A1
公开(公告)日：2017-05-18
申请号：US15322623
申请日：2015-07-02
发明人： Gianpiero MENSA , Raffaele CORREALE
CPC分类号： H01J37/08 , F16K99/0005 , F16K99/0028 , F16K99/0042 , H01J27/205 , H01J37/18 , H01J2237/006 , H01J2237/182 , H01J2237/186
摘要： A device 1 for generating a controlled ionic flow I is described. The device 1 is portable and comprises an ionization chamber 6, at least one inlet member 2 and at least one ion outlet member 3. The ionization chamber 6 is suitable to be kept at a vacuum pressure, and configured to ionize gaseous particles contained therein. The at least one inlet member 2 is configured to inhibit or allow and/or adjust an inlet in the ionization chamber of a gaseous flow Fi of said gaseous particles. In addition, the at least one inlet member 2 comprises a gaseous flow adjusting interface 22, having a plurality of nano-holes 20, of sub-micrometric dimensions, suitable to be opened or closed, in a controlled manner, to inhibit or allow a respective plurality of gas micro-flows through the at least one inlet member 2.
-
公开(公告)号：US08742362B2
公开(公告)日：2014-06-03
申请号：US13771584
申请日：2013-02-20
发明人： Kazuo Hayashi , Akiko Kakutani , Akihiro Osanai , Kiyokazu Sato , Tsutomu Kurusu , Takeshi Yoshiyuki
CPC分类号： H01J37/08 , H01J27/24 , H01J2237/022 , H01J2237/08 , H01J2237/186 , H01J2237/31701
摘要： According to one embodiment, a laser ion source is configured to generate ions by application of a laser beam, the laser ion source including a case to be evacuated, an irradiation box disposed in the case and including a target which generates ions by irradiation of laser light, an ion beam extraction mechanism which electrostatically extracts ions from the irradiation box and guides the ions outside the case as an ion beam, a valve provided to an ion beam outlet of the case, the valve being opened at ion beam emission and being closed at other times, and a shutter provided between the valve and the irradiation box, the shutter being intermittently opened at ion beam emission and being closed at other times.
摘要翻译： 根据一个实施例，激光离子源被配置为通过施加激光束产生离子，激光离子源包括要抽真空的壳体，设置在壳体中的照射盒，并且包括通过照射激光产生离子的靶 光，离子束提取机构，其从照射箱静电提取离子并将离子引导到壳体外部作为离子束;阀设置在壳体的离子束出口处，阀门以离子束发射打开并被封闭 在其他时间，以及设置在阀和照射箱之间的闸门，闸门以离子束发射间歇地打开并且在其它时间被关闭。
-
公开(公告)号：US20130161511A1
公开(公告)日：2013-06-27
申请号：US13665623
申请日：2012-10-31
申请人： Ebara Corporation
IPC分类号： H01J37/26
CPC分类号： H01J37/261 , H01J37/073 , H01J37/12 , H01J37/265 , H01J37/28 , H01J2237/036 , H01J2237/062 , H01J2237/06333 , H01J2237/1205 , H01J2237/1518 , H01J2237/186 , H01J2237/2443 , H01J2237/2817
摘要： An electron beam inspection device observes a sample by irradiating the sample set on a stage with electron beams and detecting the electron beams from the sample. The electron beam inspection device has one electron column which irradiates the sample with the electron beams, and detects the electron beams from the sample. In this one electron column, a plurality of electron beam irradiation detecting systems are formed which each form electron beam paths in which the electron beams with which the sample is irradiated and the electron beams from the sample pass. The electron beam inspection device inspects the sample by simultaneously using a plurality of electron beam irradiation detecting systems and simultaneously irradiating the sample with the plurality of electron beams.
摘要翻译： 电子束检查装置通过用电子束照射载物台上的样品并检测来自样品的电子束来观察样品。 电子束检查装置具有一个电子管，用电子束照射样品，并检测来自样品的电子束。 在该一个电子柱中，形成多个电子束照射检测系统，每个电子束照射检测系统形成电子束路径，其中照射样品的电子束和来自样品的电子束通过。 电子束检查装置通过同时使用多个电子束照射检测系统来检查样品，同时用多个电子束照射样品。
-
10.发明授权公开(公告)号：US08302420B2
公开(公告)日：2012-11-06
申请号：US12430453
申请日：2009-04-27
申请人： You-Jin Wang
发明人： You-Jin Wang
IPC分类号： B01F3/04
CPC分类号： G05D16/2013 , H01J37/185 , H01J37/28 , H01J2237/006 , H01J2237/182 , H01J2237/184 , H01J2237/186 , Y10T137/0396
摘要： A method for venting a gas into a closed space is disclosed. At the beginning of the venting process the flow rate of the venting gas starts from zero and then increases at a substantially differential incremental rate for at least a certain period of time. When a predefined saturation pressure inside the closed space is reached, the flow rate of the venting gas is maintained or increased to speed up the venting process.
摘要翻译： 公开了一种将气体排放到封闭空间中的方法。 在排气过程开始时，排放气体的流量从零开始，然后以基本上不同的增量速率增加至少一段时间。 当达到封闭空间内的预定饱和压力时，排气的流量被维持或增加，以加速排气过程。
-
-
-
-
-
-
-
-
-
搜索结果
68 条记录 (耗时 0.025 秒)
