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公开(公告)号:US20230402268A1
公开(公告)日:2023-12-14
申请号:US17836657
申请日:2022-06-09
Applicant: Applied Materials, Inc.
Inventor: Songjae LEE , Masato ISHII , Martin TRUEMPER , Richard O. COLLINS , Martin Jeffrey SALINAS , Yong ZHENG , Anita ZHAO , Adele MARIADASS , Christophe MARCADAL , Henry BARANDICA , Ernesto J. ULLOA
CPC classification number: H01J37/32834 , H01J37/32449 , H01J37/32357 , H01J37/32899 , C23C14/022 , B08B7/0035 , B08B13/00 , H01J37/32825 , H01J2237/335 , H01J2237/186 , H01J2237/182
Abstract: A plasma processing system for cleaning a substrate is provided. The plasma processing system includes a process chamber that includes: a chamber body enclosing an interior volume; and a substrate support disposed in the interior volume. The plasma processing system includes a vacuum pump; a first exhaust line fluidly coupled between the interior volume of the process chamber and the vacuum pump; and a second exhaust line fluidly coupled between the interior volume of the process chamber and the vacuum pump. The first exhaust line and the second exhaust line are arranged to provide alternative paths for the exhaust between the interior volume and the vacuum pump, and the first exhaust line has an internal diameter that is at least 50% smaller than the internal diameter of the second exhaust line.