公开(公告)号：US11538687B2

公开(公告)日：2022-12-27

申请号：US16713189

申请日：2019-12-13

Applicant: ENTEGRIS, INC.

Inventor： Ying Tang ,  Sharad N. Yedave ,  Joseph R. Despres ,  Joseph D. Sweeney

IPC: H01L21/265 ,  H01J37/317 ,  H01J37/32

Abstract: A system and method for fluorine ion implantation is described, which includes a fluorine gas source used to generate a fluorine ion species for implantation to a subject, and an arc chamber that includes one or more non-tungsten materials (graphite, carbide, fluoride, nitride, oxide, ceramic). The system minimizes formation of tungsten fluoride during system operation, thereby extending source life and promoting improved system performance. Further, the system can include a hydrogen and/or hydride gas source, and these gases can be used along with the fluorine gas to improve source lifetime and/or beam current.

公开(公告)号：US20220186358A1

公开(公告)日：2022-06-16

申请号：US17688613

申请日：2022-03-07

Applicant: ENTEGRIS, INC.

Inventor： Oleg Byl ,  Ying Tang ,  Joseph R. Despres ,  Joseph D. Sweeney ,  Sharad N. Yedave

IPC: C23C14/48 ,  C23C14/56 ,  H01J37/08 ,  H01J37/317

Abstract: The current disclosure is directed to methods and assemblies configured to deliver a mixture of germanium tetrafluoride (GeF4) and hydrogen (H2) gases to an ion implantation apparatus, so H2 is present in an amount in the range of 25%-67% (volume) of the gas mixture, or the GeF4 and H2 are present in a volume ratio (GeF4:H2) in the range of 3:1 to 33:67. The use of the H2 gas in an amount in mixture or relative to the GeF4 gas prevents the volatilization of cathode material, thereby improving performance and lifetime of the ion implantation apparatus. Gas mixtures according to the disclosure also result in a significant Ge+ current gain and W+ peak reduction during au ion implantation procedure.

公开(公告)号：US10354877B2

公开(公告)日：2019-07-16

申请号：US15928645

申请日：2018-03-22

Applicant: Entegris, Inc.

Inventor： Oleg Byl ,  Edward A. Sturm ,  Ying Tang ,  Sharad N. Yedave ,  Joseph D. Sweeney ,  Steven G. Sergi ,  Barry Lewis Chambers

IPC: H01J37/08 ,  H01L31/18 ,  H01L33/00 ,  H01J37/317 ,  H01L21/265

Abstract: Ion implantation processes and systems are described, in which carbon dopant source materials are utilized to effect carbon doping. Various gas mixtures are described, including a carbon dopant source material, as well as co-flow combinations of gases for such carbon doping. Provision of in situ cleaning agents in the carbon dopant source material is described, as well as specific combinations of carbon dopant source gases, hydride gases, fluoride gases, noble gases, oxide gases and other gases.

公开(公告)号：US20190103275A1

公开(公告)日：2019-04-04

申请号：US16149792

申请日：2018-10-02

Applicant: Entegris, Inc.

Inventor： Oleg Byl ,  Sharad N. Yedave ,  Joseph D. Sweeney ,  Barry Lewis Chambers ,  Ying Tang

IPC: H01L21/265 ,  H01L31/18 ,  H01J37/244 ,  H01J37/08 ,  H01J37/317

Abstract: Apparatus and method for use of solid dopant phosphorus and arsenic sources and higher order phosphorus or arsenic implant source material are described. In various implementations, solid phosphorus-comprising or arsenic-comprising materials are provided in the ion source chamber for generation of dimer or tetramer implant species. In other implementations, the ion implantation is augmented by use of a reactor for decomposing gaseous phosphor-us-comprising or arsenic-comprising materials to form gas phase dimers and tetramers for ion implantation.

公开(公告)号：US11827973B2

公开(公告)日：2023-11-28

申请号：US17688613

申请日：2022-03-07

Applicant: ENTEGRIS, INC.

Inventor： Oleg Byl ,  Ying Tang ,  Joseph R. Despres ,  Joseph D. Sweeney ,  Sharad N. Yedave

IPC: C23C14/48 ,  C23C14/56 ,  H01J37/08 ,  H01J37/317

CPC classification number: C23C14/48 ,  C23C14/564 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/022

Abstract: The current disclosure is directed to methods and assemblies configured to deliver a mixture of germanium tetrafluoride (GeF4) and hydrogen (H2) gases to an ion implantation apparatus, so H2 is present in an amount in the range of 25%-67% (volume) of the gas mixture, or the GeF4 and H2 are present in a volume ratio (GeF4:H2) in the range of 3:1 to 33:67. The use of the H2 gas in an amount in mixture or relative to the GeF4 gas prevents the volatilization of cathode material, thereby improving performance and lifetime of the ion implantation apparatus. Gas mixtures according to the disclosure also result in a significant Ge+ current gain and W+ peak reduction during au ion implantation procedure.

公开(公告)号：US11621148B2

公开(公告)日：2023-04-04

申请号：US17024261

申请日：2020-09-17

Applicant: ENTEGRIS, INC.

Inventor： Ying Tang ,  Bryan C. Hendrix ,  Oleg Byl ,  Sharad N. Yedave

IPC: H01J37/32 ,  C23C14/48 ,  C23C14/06

Abstract: Described are plasma immersion ion implantation methods that use multiple precursor gases, particularly for the purpose of controlling an amount of a specific atomic dopant species that becomes implanted into a workpiece relative to other atomic species that also become implanted into the workpiece during the implantation process.

公开(公告)号：US11062906B2

公开(公告)日：2021-07-13

申请号：US14912380

申请日：2014-08-14

Applicant: Entegris, Inc.

Inventor： Ying Tang ,  Joseph D. Sweeney ,  Tianniu Chen ,  James J. Mayer ,  Richard S. Ray ,  Oleg Byl ,  Sharad N. Yedave ,  Robert Kaim

IPC: H01L21/265 ,  H01J37/317 ,  H01J37/32

Abstract: Compositions, systems, and methods are described for implanting silicon and/or silicon ions in a substrate, involving generation of silicon and/or silicon ions from corresponding silicon precursor compositions, and implantation of the silicon and/or silicon ions in the substrate.

公开(公告)号：US20190078696A1

公开(公告)日：2019-03-14

申请号：US15743109

申请日：2016-07-08

Applicant: Entegris, Inc.

Inventor： Glenn M. Tom ,  Karl W. Olander ,  James A. Dietz ,  Michael J. Wodjenski ,  Edward A. Sturm ,  Susan K. Dimascio ,  Luping Wang ,  James V. McManus ,  Steven M. Lurcott ,  Jose I. Amo ,  Paul J. Marganski ,  Joseph D. Sweeney ,  Shaun M. Wilson ,  Steven E. Bishop ,  Greg Nelson ,  Donald J. Carruthers ,  Sharad N. Yedave ,  Ying Tang ,  Joseph Despres ,  Barry Chambers ,  Richard Ray ,  Daniel Elzer

IPC: F16K17/00 ,  F16K17/04 ,  F16K31/00 ,  F16K31/06 ,  F17C13/04

Abstract: Fluid supply packages of varying types are described, which are useful for delivery of fluids to fluid-utilizing facilities such as semiconductor manufacturing facilities, solar panel manufacturing facilities, and flat-panel display manufacturing facilities. The fluid supply packages include fluid supply vessels and valve heads of varied configuration, as useful to constitute fluid supply packages that are pressure-regulated and/or adsorbent-based in character.

公开(公告)号：US10109488B2

公开(公告)日：2018-10-23

申请号：US15507859

申请日：2015-08-19

Applicant: Entegris, Inc.

Inventor： Oleg Byl ,  Sharad N. Yedave ,  Joseph D. Sweeney ,  Barry Lewis Chambers ,  Ying Tang

IPC: H01J37/00 ,  H01L21/265 ,  H01J37/08 ,  H01J37/317 ,  H01J37/244 ,  H01L31/18

Abstract: Apparatus and method for use of solid dopant phosphorus and arsenic sources and higher order phosphorus or arsenic implant source material are described. In various implementations, solid phosphorus-comprising or arsenic-comprising materials are provided in the ion source chamber for generation of dimer or tetramer implant species. In other implementations, the ion implantation is augmented by use of a reactor for decomposing gaseous phosphorus-comprising or arsenic-comprising materials to form gas phase dimers and tetramers for ion implantation.

公开(公告)号：US11315791B2

公开(公告)日：2022-04-26

申请号：US16713381

申请日：2019-12-13

Applicant: ENTEGRIS, INC.

Inventor： Ying Tang ,  Sharad N. Yedave

IPC: H01L21/265 ,  H01J37/317 ,  H01J37/32

Abstract: A method and system for fluorine ion implantation is described, where a fluorine compound capable of forming multiple fluorine ionic species is introduced into an ion implanter at a predetermined flow rate. Fluorine ionic species are generated at a predetermined arc power and source magnetic field, providing an optimized beam current for the desired fluorine ionic specie. The desired fluorine ionic specie, such as one having multiple fluorine atoms, is implanted into the substrate under the selected operating conditions.