公开(公告)号：US11062906B2

公开(公告)日：2021-07-13

申请号：US14912380

申请日：2014-08-14

Applicant: Entegris, Inc.

Inventor： Ying Tang ,  Joseph D. Sweeney ,  Tianniu Chen ,  James J. Mayer ,  Richard S. Ray ,  Oleg Byl ,  Sharad N. Yedave ,  Robert Kaim

IPC: H01L21/265 ,  H01J37/317 ,  H01J37/32

Abstract: Compositions, systems, and methods are described for implanting silicon and/or silicon ions in a substrate, involving generation of silicon and/or silicon ions from corresponding silicon precursor compositions, and implantation of the silicon and/or silicon ions in the substrate.

公开(公告)号：US20170330756A1

公开(公告)日：2017-11-16

申请号：US15664554

申请日：2017-07-31

Applicant: Entegris, Inc.

Inventor： Robert Kaim ,  Joseph D. Sweeney ,  Anthony M. Avila ,  Richard S. Ray

IPC: H01L21/22 ,  H01J37/08 ,  H01J37/317 ,  H01L21/265 ,  H01L21/223 ,  F17C7/00 ,  H01J37/30

CPC classification number: H01L21/2225 ,  F17C7/00 ,  H01J37/08 ,  H01J37/3002 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/304 ,  H01L21/223 ,  H01L21/26506 ,  Y02E60/321 ,  Y10T428/13

Abstract: An ion implantation system and process, in which the performance and lifetime of the ion source of the ion implantation system are enhanced, by utilizing isotopically enriched dopant materials, or by utilizing dopant materials with supplemental gas(es) effective to provide such enhancement.

公开(公告)号：US09754786B2

公开(公告)日：2017-09-05

申请号：US14691904

申请日：2015-04-21

Applicant: Entegris, Inc.

Inventor： Robert Kaim ,  Joseph D. Sweeney ,  Anthony M. Avila ,  Richard S. Ray

IPC: H01J27/22 ,  H01L21/22 ,  H01J37/08 ,  H01J37/317 ,  F17C7/00 ,  H01L21/265 ,  H01J37/30 ,  H01L21/223

CPC classification number: H01L21/2225 ,  F17C7/00 ,  H01J37/08 ,  H01J37/3002 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/304 ,  H01L21/223 ,  H01L21/26506 ,  Y02E60/321 ,  Y10T428/13

Abstract: An ion implantation system and process, in which the performance and lifetime of the ion source of the ion implantation system are enhanced, by utilizing isotopically enriched dopant materials, or by utilizing dopant materials with supplemental gas(es) effective to provide such enhancement.

公开(公告)号：US09171725B2

公开(公告)日：2015-10-27

申请号：US14331092

申请日：2014-07-14

Applicant: Entegris, Inc.

Inventor： James J. Mayer ,  Richard S. Ray ,  Robert Kaim ,  Joseph D. Sweeney

IPC: H01L21/265 ,  H01L21/302 ,  H01J37/08 ,  H01J37/317

CPC classification number: H01L21/2658 ,  C09K3/00 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/304 ,  H01L21/26506 ,  H01L21/302

Abstract: Isotopically enriched silicon precursor compositions are disclosed, as useful in ion implantation to enhance performance of the ion implantation system, in relation to corresponding ion implantation lacking such isotopic enrichment of the silicon precursor composition. The silicon dopant composition includes at least one silicon compound that is isotopically enriched above natural abundance in at least one of 28Si, 29Si, and 30Si, and may include a supplemental gas including at least one of a co-species gas and a diluent gas. Dopant gas supply apparatus for providing such silicon dopant compositions to an ion implanter are described, as well as ion implantation systems including such dopant gas supply apparatus.

Abstract translation: 公开了同位素富集的硅前体组合物，用于离子注入以提高离子注入系统的性能，与相对于缺乏硅前体组合物的同位素富集的离子注入相关。 所述硅掺杂剂组合物包括在28Si，29Si和30Si中的至少一种中同位素富集的至少一种硅化合物，并且可以包括包括共同种类气体和稀释气体中的至少一种的补充气体。 描述了用于将离子注入机提供这种硅掺杂剂组合物的掺杂气体供应装置，以及包括这种掺杂剂气体供应装置的离子注入系统。

公开(公告)号：US20140326896A1

公开(公告)日：2014-11-06

申请号：US14338132

申请日：2014-07-22

Applicant: Entegris, Inc.

Inventor： Robert Kaim ,  Joseph D. Sweeney ,  Anthony M. Avila ,  Richard S. Ray

IPC: H01J37/08 ,  H01J37/30

CPC classification number: H01L21/2225 ,  F17C7/00 ,  H01J37/08 ,  H01J37/3002 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/304 ,  H01L21/223 ,  H01L21/26506 ,  Y02E60/321 ,  Y10T428/13

Abstract: An ion implantation system and process, in which the performance and lifetime of the ion source of the ion implantation system are enhanced, by utilizing isotopically enriched dopant materials, or by utilizing dopant materials with supplemental gas(es) effective to provide such enhancement.

Abstract translation: 通过利用同位素富集的掺杂剂材料，或通过利用具有有效提供这种增强作用的补充气体的掺杂剂材料，离子注入系统和工艺，离子注入系统的离子源的性能和寿命得到增强。

公开(公告)号：US09831063B2

公开(公告)日：2017-11-28

申请号：US14768758

申请日：2014-03-03

Applicant: Entegris, Inc.

Inventor： Oleg Byl ,  Joseph D. Sweeney ,  Ying Tang ,  Richard S. Ray

IPC: H01J37/00 ,  H01J37/317 ,  H01J37/08 ,  H01L21/22 ,  C23C14/48

CPC classification number: H01J37/3171 ,  C23C14/48 ,  H01J37/08 ,  H01J2237/006 ,  H01J2237/08 ,  H01L21/2225

Abstract: Ion implantation compositions, systems and methods are described, for implantation of dopant species. Specific selenium dopant source compositions are described, as well as the use of co-flow gases to achieve advantages in implant system characteristics such as recipe transition, beam stability, source life, beam uniformity, beam current, and cost of ownership.

公开(公告)号：US09812291B2

公开(公告)日：2017-11-07

申请号：US14378652

申请日：2013-02-14

Applicant: Entegris, Inc.

Inventor： Richard S. Ray

IPC: H01J37/317 ,  H01J37/08 ,  C23C14/06 ,  C23C14/48 ,  C23C14/52 ,  C23C14/54

CPC classification number: H01J37/3171 ,  C23C14/0694 ,  C23C14/48 ,  C23C14/52 ,  C23C14/54 ,  H01J37/08 ,  H01J2237/006 ,  H01J2237/022

Abstract: Systems and processes for utilizing phosphorus fluoride in place of or in combination with, phosphine as a phosphorus dopant source composition, to reduce buildup of unwanted phosphorus deposits in ion implanter systems. The phosphorus fluoride may comprise PF3 and/or PF5. Phosphorus fluoride and phosphine may be co-flowed to the ion implanter, or each of such phosphorus dopant source materials can be alternatingly and sequentially flowed separately to the ion implanter, to achieve reduction in unwanted buildup of phosphorus solids in the implanter, relative to a corresponding process system utilizing only phosphine as the phosphorus dopant source material.

公开(公告)号：US09012874B2

公开(公告)日：2015-04-21

申请号：US14338132

申请日：2014-07-22

Applicant: Entegris, Inc.

Inventor： Robert Kaim ,  Joseph D. Sweeney ,  Anthony M. Avila ,  Richard S. Ray

IPC: H01J37/317 ,  H01L21/265 ,  H01J37/08 ,  F17C7/00 ,  H01J37/30

CPC classification number: H01L21/2225 ,  F17C7/00 ,  H01J37/08 ,  H01J37/3002 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/304 ,  H01L21/223 ,  H01L21/26506 ,  Y02E60/321 ,  Y10T428/13

Abstract: An ion implantation system and process, in which the performance and lifetime of the ion source of the ion implantation system are enhanced, by utilizing isotopically enriched dopant materials, or by utilizing dopant materials with supplemental gas(es) effective to provide such enhancement.

Abstract translation: 通过利用同位素富集的掺杂剂材料或通过利用具有有效提供这种增强作用的补充气体的掺杂剂材料，离子注入系统和工艺，离子注入系统的离子源的性能和寿命得到增强。

公开(公告)号：US20140322903A1

公开(公告)日：2014-10-30

申请号：US14331092

申请日：2014-07-14

Applicant: Entegris, Inc.

Inventor： James J. Mayer ,  Richard S. Ray ,  Robert Kaim ,  Joseph D. Sweeney

IPC: H01L21/265

CPC classification number: H01L21/2658 ,  C09K3/00 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/304 ,  H01L21/26506 ,  H01L21/302

Abstract: Isotopically enriched silicon precursor compositions are disclosed, as useful in ion implantation to enhance performance of the ion implantation system, in relation to corresponding ion implantation lacking such isotopic enrichment of the silicon precursor composition. The silicon dopant composition includes at least one silicon compound that is isotopically enriched above natural abundance in at least one of 28Si, 29Si, and 30Si, and may include a supplemental gas including at least one of a co-species gas and a diluent gas. Dopant gas supply apparatus for providing such silicon dopant compositions to an ion implanter are described, as well as ion implantation systems including such dopant gas supply apparatus.

Abstract translation: 公开了同位素富集的硅前体组合物，用于离子注入以提高离子注入系统的性能，与相对于缺乏硅前体组合物的同位素富集的离子注入相关。 所述硅掺杂剂组合物包括在28Si，29Si和30Si中的至少一种中同位素富集的至少一种硅化合物，并且可以包括包括共同种类气体和稀释气体中的至少一种的补充气体。 描述了用于将离子注入机提供这种硅掺杂剂组合物的掺杂气体供应装置，以及包括这种掺杂剂气体供应装置的离子注入系统。

公开(公告)号：US10508773B2

公开(公告)日：2019-12-17

申请号：US16271339

申请日：2019-02-08

Applicant: ENTEGRIS, INC.

Inventor： Joseph D. Sweeney ,  Edward Edmiston Jones ,  Joseph Robert Despres ,  Richard S. Ray ,  Peter C. Van Buskirk ,  Edward A. Sturm ,  Christopher Scannell

IPC: G06K19/06 ,  F17C13/02 ,  F17C11/00 ,  F17C13/00 ,  G06K19/07

Abstract: A fluid supply package is described, which includes a fluid storage and dispensing vessel, and a fluid dispensing assembly coupled to the vessel and configured to enable discharge of fluid from the vessel under dispensing conditions, wherein the fluid supply package includes an informational augmentation device thereon, e.g., at least one of a quick read (QR) code and an RFID tag, for informational augmentation of the package. Process systems are described including process tools and one or more fluid supply packages of the foregoing type, wherein the process tool is configured for communicative interaction with the fluid supply package(s). Various communicative arrangements are described, which are usefully employed to enhance the efficiency and operation of process systems in which fluid supply packages of the foregoing type are employed.