公开(公告)号：US09534285B2

公开(公告)日：2017-01-03

申请号：US14301861

申请日：2014-06-11

Applicant: Entegris, Inc.

Inventor： Chongying Xu ,  Tianniu Chen ,  Thomas M. Cameron ,  Jeffrey F. Roeder ,  Thomas H. Baum

IPC: C23C16/40 ,  C23C14/08 ,  C07F17/00 ,  C23C16/455

CPC classification number: C23C14/088 ,  C07F17/00 ,  C23C16/409 ,  C23C16/45553

Abstract: Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp)2, wherein M is strontium, barium, tantalum or lanthanum, and Cp is cyclopentadienyl, of the formula wherein each of R1-R5 is the same as or different from one another, with each being independently selected from among hydrogen, C1-C12 alkyl, C1-C12 amino, C6-C10 aryl, C1-C12 alkoxy, C3-C6 alkylsilyl, C2-C12 alkenyl, R1R2R3NNR3, wherein R1, R2 and R3 may be the same as or different from one another and each is independently selected from hydrogen and C1-C6 alkyl, and pendant ligands including functional group(s) providing further coordination to the metal center M. The precursors of the above formula are useful to achieve uniform coating of high dielectric constant materials in the manufacture of flash memory and other microelectronic devices.

Abstract translation: 用于钛酸盐薄膜的原子层沉积（ALD）和化学气相沉积（CVD）的钡，锶，钽和镧前体组合物。 前体具有式M（Cp）2，其中M是锶，钡，钽或镧，Cp是环戊二烯基，其中R 1 -R 5各自彼此相同或不同，各自独立地 选自氢，C1-C12烷基，C1-C12氨基，C6-C10芳基，C1-C12烷氧基，C3-C6烷基甲硅烷基，C2-C12烯基，R1R2R3NNR3，其中R1，R2和R3可以相同或不同 并且各自独立地选自氢和C 1 -C 6烷基，以及包括提供与金属中心M进一步配位的官能团的侧链配体。上式的前体可用于实现高介电常数的均匀涂布 材料制造闪存等微电子器件。

公开(公告)号：US20150315215A1

公开(公告)日：2015-11-05

申请号：US14798775

申请日：2015-07-14

Applicant: Entegris, Inc.

Inventor： Ziyun Wang ,  Chongying Xu ,  Bryan Hendrix ,  Jeffrey Roeder ,  Tianniu Chen ,  Thomas H. Baum

IPC: C07F7/10 ,  H01L21/02

CPC classification number: C07F7/10 ,  H01L21/02271

Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g.,

Abstract translation: 在制造半导体器件（例如包括碳氮化硅，碳氮化硅和氮化硅（Si 3 N 4）的薄膜）的制造中的硅前体，以及使用低温（例如，550℃）将硅前体沉积在衬底上的方法 ℃）化学气相沉积工艺，用于制造ULSI器件和器件结构。

公开(公告)号：US20140329011A1

公开(公告)日：2014-11-06

申请号：US14333536

申请日：2014-07-17

Applicant: Entegris, Inc.

Inventor： Ziyun Wang ,  Chongying Xu ,  Bryan Hendrix ,  Jeffrey Roeder ,  Tianniu Chen ,  Thomas H. Baum

IPC: C07F7/10 ,  H01L21/02

CPC classification number: C07F7/10 ,  H01L21/02271

Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g.,

Abstract translation: 在制造半导体器件（例如包括碳氮化硅，碳氮化硅和氮化硅（Si 3 N 4）的薄膜）的制造中的硅前体，以及使用低温（例如，550℃）将硅前体沉积在衬底上的方法 ℃）化学气相沉积工艺，用于制造ULSI器件和器件结构。

公开(公告)号：US09783558B2

公开(公告)日：2017-10-10

申请号：US14798775

申请日：2015-07-14

Applicant: Entegris, Inc.

Inventor： Ziyun Wang ,  Chongying Xu ,  Bryan Hendrix ,  Jeffrey Roeder ,  Tianniu Chen ,  Thomas H. Baum

IPC: C07F7/10 ,  H01L21/02

CPC classification number: C07F7/10 ,  H01L21/02271

Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g.,

公开(公告)号：US09731368B2

公开(公告)日：2017-08-15

申请号：US14803962

申请日：2015-07-20

Applicant: Entegris, Inc.

Inventor： Tianniu Chen ,  Michael B. Korzenski ,  Ping Jiang

IPC: B23K31/02 ,  B23K1/018 ,  C25C1/00 ,  C22B3/02 ,  C22B3/00 ,  C22B7/00 ,  C22B1/00 ,  C22B4/00 ,  C22B3/04 ,  B23K3/08 ,  B23K37/00 ,  B09B3/00 ,  B09B5/00 ,  H05K3/22

CPC classification number: B23K1/018 ,  B09B3/00 ,  B09B5/00 ,  B23K3/08 ,  B23K37/00 ,  C22B1/005 ,  C22B3/02 ,  C22B3/04 ,  C22B4/00 ,  C22B7/006 ,  C22B11/046 ,  C25C1/00 ,  H05K3/22 ,  H05K2203/178 ,  Y02P10/234 ,  Y02P70/613 ,  Y02W30/82 ,  Y02W30/821 ,  Y02W30/822

Abstract: Apparatuses and processes for recycling printed wire boards, wherein electronic components, precious metals and base metals may be collected for reuse and recycling. The apparatuses generally include a mechanical solder removal module and/or a thermal module, a chemical solder removal module, and a precious metal leaching module, wherein the modules are attached for continuous passage of the e-waste from module to module.

公开(公告)号：US20160211137A1

公开(公告)日：2016-07-21

申请号：US14912380

申请日：2014-08-14

Applicant: ENTEGRIS, INC.

Inventor： Ying Tang ,  Joseph D. Sweeney ,  Tianniu Chen ,  James J. Mayer ,  Richard S. Ray ,  Oleg Byl ,  Sharad N. Yedave ,  Robert Kaim

IPC: H01L21/265 ,  H01J37/317

CPC classification number: H01L21/265 ,  H01J37/3171 ,  H01J37/32412 ,  H01J2237/006 ,  H01J2237/08 ,  H01L21/26506 ,  H01L21/26546

Abstract: Compositions, systems, and methods are described for implanting silicon and/or silicon ions in a substrate, involving generation of silicon and/or silicon ions from corresponding silicon precursor compositions, and implantation of the silicon and/or silicon ions in the substrate.

Abstract translation: 描述了用于在衬底中注入硅和/或硅离子的组合物，系统和方法，包括从相应的硅前体组合物产生硅和/或硅离子，以及在衬底中注入硅和/或硅离子。

公开(公告)号：US11062906B2

公开(公告)日：2021-07-13

申请号：US14912380

申请日：2014-08-14

Applicant: Entegris, Inc.

Inventor： Ying Tang ,  Joseph D. Sweeney ,  Tianniu Chen ,  James J. Mayer ,  Richard S. Ray ,  Oleg Byl ,  Sharad N. Yedave ,  Robert Kaim

IPC: H01L21/265 ,  H01J37/317 ,  H01J37/32

Abstract: Compositions, systems, and methods are described for implanting silicon and/or silicon ions in a substrate, involving generation of silicon and/or silicon ions from corresponding silicon precursor compositions, and implantation of the silicon and/or silicon ions in the substrate.

公开(公告)号：US09219232B2

公开(公告)日：2015-12-22

申请号：US14251475

申请日：2014-04-11

Applicant: Entegris, Inc.

Inventor： William Hunks ,  Tianniu Chen ,  Chongying Xu ,  Jeffrey F. Roeder ,  Thomas H. Baum ,  Matthias Stender ,  Philip S. H. Chen ,  Gregory T. Stauf ,  Bryan C. Hendrix

IPC: H01L21/36 ,  H01L45/00 ,  C07C251/08 ,  C07F7/00 ,  C07F7/10 ,  C07F7/28 ,  C07F9/90 ,  C07F17/00 ,  C23C16/18 ,  C23C16/30

CPC classification number: H01L45/1616 ,  C07C251/08 ,  C07F7/003 ,  C07F7/10 ,  C07F7/28 ,  C07F9/90 ,  C07F9/902 ,  C07F17/00 ,  C23C16/18 ,  C23C16/305 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1683

Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.

Abstract translation: 描述了可用于相应的含金属薄膜的CVD / ALD的锑，锗和碲前体，以及包含这些前体的组合物，制备这些前体的方法，以及使用这种前体制备的膜和微电子器件产品，以及相应的制造 方法。 本发明的前体可用于形成锗 - 锑 - 碲（GST）膜和微电子器件产品，例如包括这种膜的相变存储器件。

公开(公告)号：US09537095B2

公开(公告)日：2017-01-03

申请号：US14332924

申请日：2014-07-16

Applicant: Entegris, Inc.

Inventor： Matthias Stender ,  Chongying Xu ,  Tianniu Chen ,  William Hunks ,  Philip S. H. Chen ,  Jeffrey F. Roeder ,  Thomas H. Baum

IPC: C23C16/00 ,  H01L45/00 ,  C07C333/16 ,  C07C395/00 ,  C07F7/10 ,  C23C16/30

CPC classification number: H01L45/1616 ,  C07C333/16 ,  C07C395/00 ,  C07F7/10 ,  C23C16/305

Abstract: Precursors for use in depositing tellurium-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of Ge2Sb2Te5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM), by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).

Abstract translation: 用于在诸如晶片或其他微电子器件基底的基底上沉积含碲膜的前体，以及制备和使用这些前体的相关工艺以及这些前体的源封装。 前体可用于通过诸如化学气相沉积（CVD）和原子层沉积（ALD）的沉积技术在制造非易失性相变存储器（PCM）中沉积Ge2Sb2Te5硫族化物薄膜。

公开(公告)号：US09102693B2

公开(公告)日：2015-08-11

申请号：US14333536

申请日：2014-07-17

Applicant: Entegris, Inc.

Inventor： Ziyun Wang ,  Chongying Xu ,  Bryan Hendrix ,  Jeffrey Roeder ,  Tianniu Chen ,  Thomas H. Baum

IPC: C07F7/10 ,  H01L21/02

CPC classification number: C07F7/10 ,  H01L21/02271

Abstract: Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g.,