公开(公告)号：US09219232B2

公开(公告)日：2015-12-22

申请号：US14251475

申请日：2014-04-11

Applicant: Entegris, Inc.

Inventor： William Hunks ,  Tianniu Chen ,  Chongying Xu ,  Jeffrey F. Roeder ,  Thomas H. Baum ,  Matthias Stender ,  Philip S. H. Chen ,  Gregory T. Stauf ,  Bryan C. Hendrix

IPC: H01L21/36 ,  H01L45/00 ,  C07C251/08 ,  C07F7/00 ,  C07F7/10 ,  C07F7/28 ,  C07F9/90 ,  C07F17/00 ,  C23C16/18 ,  C23C16/30

CPC classification number: H01L45/1616 ,  C07C251/08 ,  C07F7/003 ,  C07F7/10 ,  C07F7/28 ,  C07F9/90 ,  C07F9/902 ,  C07F17/00 ,  C23C16/18 ,  C23C16/305 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1683

Abstract: Antimony, germanium and tellurium precursors useful for CVD/ALD of corresponding metal-containing thin films are described, along with compositions including such precursors, methods of making such precursors, and films and microelectronic device products manufactured using such precursors, as well as corresponding manufacturing methods. The precursors of the invention are useful for forming germanium-antimony-tellurium (GST) films and microelectronic device products, such as phase change memory devices, including such films.

Abstract translation: 描述了可用于相应的含金属薄膜的CVD / ALD的锑，锗和碲前体，以及包含这些前体的组合物，制备这些前体的方法，以及使用这种前体制备的膜和微电子器件产品，以及相应的制造 方法。 本发明的前体可用于形成锗 - 锑 - 碲（GST）膜和微电子器件产品，例如包括这种膜的相变存储器件。

公开(公告)号：US09537095B2

公开(公告)日：2017-01-03

申请号：US14332924

申请日：2014-07-16

Applicant: Entegris, Inc.

Inventor： Matthias Stender ,  Chongying Xu ,  Tianniu Chen ,  William Hunks ,  Philip S. H. Chen ,  Jeffrey F. Roeder ,  Thomas H. Baum

IPC: C23C16/00 ,  H01L45/00 ,  C07C333/16 ,  C07C395/00 ,  C07F7/10 ,  C23C16/30

CPC classification number: H01L45/1616 ,  C07C333/16 ,  C07C395/00 ,  C07F7/10 ,  C23C16/305

Abstract: Precursors for use in depositing tellurium-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of Ge2Sb2Te5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM), by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).

Abstract translation: 用于在诸如晶片或其他微电子器件基底的基底上沉积含碲膜的前体，以及制备和使用这些前体的相关工艺以及这些前体的源封装。 前体可用于通过诸如化学气相沉积（CVD）和原子层沉积（ALD）的沉积技术在制造非易失性相变存储器（PCM）中沉积Ge2Sb2Te5硫族化物薄膜。

公开(公告)号：US20140329357A1

公开(公告)日：2014-11-06

申请号：US14332924

申请日：2014-07-16

Applicant: Entegris, Inc.

Inventor： Matthias Stender ,  Chongying Xu ,  Tianniu Chen ,  William Hunks ,  Philip S.H. Chen ,  Jeffrey F. Roeder ,  Thomas H. Baum

IPC: H01L45/00

CPC classification number: H01L45/1616 ,  C07C333/16 ,  C07C395/00 ,  C07F7/10 ,  C23C16/305

Abstract: Precursors for use in depositing tellurium-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of Ge2Sb2Te5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM), by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).

Abstract translation: 用于在诸如晶片或其他微电子器件基底的基底上沉积含碲膜的前体，以及制备和使用这些前体的相关工艺以及这些前体的源封装。 前体可用于通过诸如化学气相沉积（CVD）和原子层沉积（ALD）的沉积技术在制造非易失性相变存储器（PCM）中沉积Ge2Sb2Te5硫族化物薄膜。