公开(公告)号：US20230279545A1

公开(公告)日：2023-09-07

申请号：US18117183

申请日：2023-03-03

Applicant: ENTEGRIS, INC.

Inventor： Philip S. H. Chen ,  Shawn Duc Nguyen ,  Bryan C. Hendrix

IPC: C23C16/455 ,  H01L21/02 ,  C23C16/34

CPC classification number: C23C16/45553 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02271 ,  C23C16/45536 ,  C23C16/345

Abstract: In summary, the invention provides a process for depositing a silicon nitride film onto a microelectronic device substrate. The process utilizes precursors and co-reactants chosen from a halosilane compound, a compound of the formula R2NH, an amino-silane, and hydrogen. The silicon nitride films so formed have increased proportions of silicon, while providing uniform thickness films, i.e., high conformality, even in high aspect 3D NAND structures.

公开(公告)号：US11371138B2

公开(公告)日：2022-06-28

申请号：US16673470

申请日：2019-11-04

Applicant: ENTEGRIS, INC.

Inventor： Philip S. H. Chen ,  Bryan C. Hendrix ,  Thomas H. Baum

IPC: C23C16/18 ,  H01L21/285 ,  C23C18/42 ,  C23C18/44 ,  C23C16/02 ,  C23C16/06

Abstract: Chemical vapor deposition (CVD) processes which use a ruthenium precursor of formula R1R2Ru(0), wherein R1 is an aryl group-containing ligand, and R2 is a diene group-containing ligand and a reducing gas a described. The CVD can include oxygen after an initial deposition period using the ruthenium precursor and reducing gas. The method can provide selective Ru deposition on conductive materials while minimizing deposition on non-conductive or less conductive materials. Further, the subsequent use of oxygen can significantly improve deposition rate while minimizing or eliminating oxidative damage of the substrate material. The method can be used to form Ru-containing layers on integrated circuits and other microelectronic devices.

公开(公告)号：US20240170290A1

公开(公告)日：2024-05-23

申请号：US18387228

申请日：2023-11-06

Applicant: ENTEGRIS, INC.

Inventor： Philip S. H. Chen ,  Shawn Duc Nguyen ,  Bryan Clark Hendrix

IPC: H01L21/28 ,  C23C16/02 ,  C23C16/08 ,  C23C16/42

CPC classification number: H01L21/28079 ,  C23C16/0227 ,  C23C16/08 ,  C23C16/42 ,  H01L29/775

Abstract: Methods for selective deposition of precursor materials and related devices are provided. The methods comprise obtaining a structure. The structure comprises a non-dielectric material, and a dielectric material. The methods comprise contacting the structure with a molybdenum precursor under conditions, so as to obtain a molybdenum material on at least a portion of the non-dielectric material. The molybdenum material is not deposited on the dielectric material under the conditions.

公开(公告)号：US11761081B2

公开(公告)日：2023-09-19

申请号：US16577860

申请日：2019-09-20

Applicant: ENTEGRIS, INC.

Inventor： Robert Wright, Jr. ,  Thomas H. Baum ,  Bryan C. Hendrix ,  Shawn D. Nguyen ,  Han Wang ,  Philip S. H. Chen

IPC: C23C16/455 ,  C23C16/18 ,  H01L21/02 ,  C23C16/56

CPC classification number: C23C16/45534 ,  C23C16/18 ,  C23C16/56 ,  H01L21/0228

Abstract: Described are vapor deposition methods for depositing metal films or layers onto a substrate, wherein the metal is molybdenum or tungsten; the methods involve organometallic precursor compounds that contain the metal and one or more carbon-containing ligands, and include depositing a metal layer formed from the metal of the precursor, onto a substrate, followed by introducing oxidizer to the formed metal layer.

公开(公告)号：US11560625B2

公开(公告)日：2023-01-24

申请号：US16245791

申请日：2019-01-11

Applicant: ENTEGRIS, INC.

Inventor： Robert Wright, Jr. ,  Shuang Meng ,  Bryan C. Hendrix ,  Thomas H. Baum ,  Philip S. H. Chen

IPC: C23C16/455 ,  C23C16/32 ,  C23C16/08

Abstract: Described are vapor deposition methods for depositing molybdenum materials onto a substrate by the use of bis(alkyl-arene) molybdenum, also referred to herein as (alkyl-arene)2Mo, for example bis(ethyl-benzene) molybdenum ((EtBz)2Mo), as a precursor for such deposition, as well as structures that contain the deposited material.

公开(公告)号：US11107675B2

公开(公告)日：2021-08-31

申请号：US15963656

申请日：2018-04-26

Applicant: Entegris, Inc.

Inventor： Thomas H. Baum ,  Philip S. H. Chen ,  Robert L. Wright ,  Bryan Hendrix ,  Shuang Meng ,  Richard Assion

IPC: H01L21/02 ,  C23C16/06 ,  C23C16/455 ,  H01L21/768 ,  H01L21/285 ,  C23C16/02 ,  C23C16/04 ,  H01L23/532

Abstract: A method of forming a molybdenum-containing material on a substrate is described, in which the substrate is contacted with molybdenum oxytetrachloride (MoOCl4) vapor under vapor deposition conditions, to deposit the molybdenum-containing material on the substrate. In various implementations, a diborane contact of the substrate may be employed to establish favorable nucleation conditions for the subsequent bulk deposition of molybdenum, e.g., by chemical vapor deposition (CVD) techniques such as pulsed CVD.

公开(公告)号：US10186570B2

公开(公告)日：2019-01-22

申请号：US14765161

申请日：2014-02-05

Applicant: Entegris, Inc. ,  ATMI Korea Co., Ltd

Inventor： Bryan C. Hendrix ,  Philip S. H. Chen ,  Weimin Li ,  Woosung Jang ,  Dingkai Guo

IPC: H01L29/94 ,  H01L49/02 ,  C23C16/40 ,  C23C16/455 ,  H01L21/02 ,  C01G23/00 ,  C01G25/00 ,  C01G35/00 ,  C23C16/18

Abstract: A high dielectric constant (k≥40), low leakage current (≤10−6 A/cm2 at 0.6 nm or lower equivalent oxide thickness) non-crystalline metal oxide is described, including an oxide of two or more compatible metals selected from the group consisting of bismuth, tantalum, niobium, barium, strontium, calcium, magnesium, titanium, zirconium, hafnium, tin, and lanthanide series metals. Metal oxides of such type may be formed with relative proportions of constituent metals being varied along a thickness of such oxides, to enhance their stability. The metal oxide may be readily made by a disclosed atomic layer deposition process, to provide a metal oxide dielectric material that is usefully employed in DRAM and other microelectronic devices.

公开(公告)号：US11987878B2

公开(公告)日：2024-05-21

申请号：US17744240

申请日：2022-05-13

Applicant: ENTEGRIS, INC.

Inventor： Philip S. H. Chen ,  Bryan C. Hendrix ,  Thomas H. Baum

IPC: C23C16/06 ,  C23C16/02 ,  C23C16/18 ,  C23C18/42 ,  C23C18/44 ,  H01L21/285

CPC classification number: C23C16/18 ,  C23C16/02 ,  C23C16/06 ,  C23C18/42 ,  C23C18/44 ,  H01L21/28568

Abstract: Chemical vapor deposition (CVD) processes which use a ruthenium precursor of formula R1R2Ru(0), wherein R1 is an aryl group-containing ligand, and R2 is a diene group-containing ligand and a reducing gas a described. The CVD can include oxygen after an initial deposition period using the ruthenium precursor and reducing gas. The method can provide selective Ru deposition on conductive materials while minimizing deposition on non-conductive or less conductive materials. Further, the subsequent use of oxygen can significantly improve deposition rate while minimizing or eliminating oxidative damage of the substrate material. The method can be used to form Ru-containing layers on integrated circuits and other microelectronic devices.

公开(公告)号：US20220267895A1

公开(公告)日：2022-08-25

申请号：US17744240

申请日：2022-05-13

Applicant: ENTEGRIS, INC.

Inventor： Philip S. H. Chen ,  Bryan C. Hendrix ,  Thomas H. Baum

IPC: C23C16/18 ,  H01L21/285 ,  C23C18/42 ,  C23C18/44 ,  C23C16/02 ,  C23C16/06

Abstract: Chemical vapor deposition (CVD) processes which use a ruthenium precursor of formula R1R2Ru(0), wherein R1 is an aryl group-containing ligand, and R2 is a diene group-containing ligand and a reducing gas a described. The CVD can include oxygen after an initial deposition period using the ruthenium precursor and reducing gas. The method can provide selective Ru deposition on conductive materials while minimizing deposition on non-conductive or less conductive materials. Further, the subsequent use of oxygen can significantly improve deposition rate while minimizing or eliminating oxidative damage of the substrate material. The method can be used to form Ru-containing layers on integrated circuits and other microelectronic devices.

公开(公告)号：US09537095B2

公开(公告)日：2017-01-03

申请号：US14332924

申请日：2014-07-16

Applicant: Entegris, Inc.

Inventor： Matthias Stender ,  Chongying Xu ,  Tianniu Chen ,  William Hunks ,  Philip S. H. Chen ,  Jeffrey F. Roeder ,  Thomas H. Baum

IPC: C23C16/00 ,  H01L45/00 ,  C07C333/16 ,  C07C395/00 ,  C07F7/10 ,  C23C16/30

CPC classification number: H01L45/1616 ,  C07C333/16 ,  C07C395/00 ,  C07F7/10 ,  C23C16/305

Abstract: Precursors for use in depositing tellurium-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of Ge2Sb2Te5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM), by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).

Abstract translation: 用于在诸如晶片或其他微电子器件基底的基底上沉积含碲膜的前体，以及制备和使用这些前体的相关工艺以及这些前体的源封装。 前体可用于通过诸如化学气相沉积（CVD）和原子层沉积（ALD）的沉积技术在制造非易失性相变存储器（PCM）中沉积Ge2Sb2Te5硫族化物薄膜。