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    DOPING OF ZrO2 FOR DRAM APPLICATIONS
    1.
    发明申请
    DOPING OF ZrO2 FOR DRAM APPLICATIONS 审中-公开
    用于DRAM应用的ZrO2的掺杂

    公开(公告)号：US20160343795A1

    公开(公告)日：2016-11-24

    申请号：US15161217

    申请日：2016-05-21

    Applicant: Entegris, Inc.

    Inventor： Julie Cissell ,  Chongying Xu ,  Thomas M. Cameron ,  William Hunks ,  David W. Peters

    IPC: H01L49/02 ,  C23C16/455 ,  H01L21/02

    CPC classification number: H01L28/40 ,  C23C16/45525 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/0228

    Abstract: A method of forming a dielectric material, comprising doping a zirconium oxide material, using a dopant precursor selected from the group consisting of Ti(NMe2)4; Ti(NMeEt)4; Ti(NEt2)4; TiCl4; tBuN=Nb(NEt2)3; tBuN=Nb(NMe2)3; t-BuN=Nb(NEtMe)3; t-AmN=Nb(NEt2)3; t-AmN=Nb(NEtMe)3; t-AmN=Nb(NMe2)3; t-AmN=Nb(OBu-t)3; Nb-13; Nb(NEt2)4; Nb(NEt2)5; Nb(N(CH3)2)5; Nb(OC2H5)5; Nb(thd)(OPr-i)4; SiH(OMe)3; SiCl4; Si(NMe2)4; (Me3Si)2NH; GeRax(ORb)4-x wherein x is from 0 to 4, each Ra is independently selected from H or C1-C8 alkyl and each Rb is independently selected from C1-C8 alkyl; GeCl4; Ge(NRa2)4 wherein each Ra is independently selected from H and C1-C8 alkyl; and (Rb3Ge)2NH wherein each Rb is independently selected from C1-C8 alkyl; bis(N,N′-diisopropyl-1,3-propanediamide) titanium; and tetrakis(isopropylmethylamido) titanium; wherein Me is methyl, Et is ethyl, Pr-i is isopropyl, t-Bu is tertiary butyl, t-Am is tertiary amyl, and thd is 2,2,6,6-tetramethyl-3,5-heptanedionate. Doped zirconium oxide materials of the present disclosure are usefully employed in ferroelectric capacitors and dynamic random access memory (DRAM) devices.

    Abstract translation: 一种形成电介质材料的方法，包括使用选自Ti（NMe 2）4的掺杂剂前体掺杂氧化锆材料; Ti（NMeEt）4; Ti（NEt2）4; TiCl4; tBuN = Nb（NEt2）3; tBuN = Nb（NMe2）3; t-BuN = Nb（NEtMe）3; t-AmN = Nb（NEt2）3; t-AmN = Nb（NEtMe）3; t-AmN = Nb（NMe2）3; t-AmN = Nb（OBu-t）3; Nb-13; Nb（NEt2）4; Nb（NEt2）5; Nb（N（CH 3）2）5; Nb（OC2H5）5; Nb（thd）（OPr-i）4; SiH（OMe）3; SiCl4; Si（NMe2）4; （Me 3 Si）2 NH GeRax（ORb）4-x其中x为0至4，每个R a独立地选自H或C 1 -C 8烷基，并且每个R b独立地选自C 1 -C 8烷基; GeCl4; Ge（NRa 2）4，其中每个R a独立地选自H和C 1 -C 8烷基; 和（Rb 3 Ge）2 NH，其中每个R b独立地选自C 1 -C 8烷基; 双（N，N'-二异丙基-1,3-丙二酰胺）钛; 和四（异丙基甲基氨基）钛; 其中Me是甲基，Et是乙基，Pr-i是异丙基，t-Bu是叔丁基，t-Am是叔戊基，thd是2,2,6,6-四甲基-3,5-庚二酮酸。 本公开的掺杂氧化锆材料有用地用于铁电电容器和动态随机存取存储器（DRAM）器件中。

    Precursors for silicon dioxide gap fill
    2.
    发明授权
    Precursors for silicon dioxide gap fill 有权

    公开(公告)号：US10043658B2

    公开(公告)日：2018-08-07

    申请号：US15862205

    申请日：2018-01-04

    Applicant: Entegris, Inc.

    Inventor： William Hunks ,  Chongying Xu ,  Bryan C. Hendrix ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Weimin Li

    IPC: H01L21/02 ,  H01L29/06

    Abstract: A full fill trench structure is described, including a microelectronic device substrate having a high aspect ratio trench therein and filled with silicon dioxide of a substantially void-free character and substantially uniform density throughout its bulk mass. A method of manufacturing a semiconductor product also is described, involving use of specific silicon precursor compositions for forming substantially void-free and substantially uniform density silicon dioxide material in the trench. The precursor fill composition may include silicon and germanium, to produce a microelectronic device structure including a GeO2/SiO2 trench fill material. A suppressor component may be employed in the precursor fill composition, to eliminate or minimize seam formation in the cured trench fill material.

    TELLURIUM COMPOUNDS USEFUL FOR DEPOSITION OF TELLURIUM CONTAINING MATERIALS
    7.
    发明申请
    TELLURIUM COMPOUNDS USEFUL FOR DEPOSITION OF TELLURIUM CONTAINING MATERIALS 有权
    用于沉积含碲化物材料的细颗粒化合物

    公开(公告)号：US20140329357A1

    公开(公告)日：2014-11-06

    申请号：US14332924

    申请日：2014-07-16

    Applicant: Entegris, Inc.

    Inventor： Matthias Stender ,  Chongying Xu ,  Tianniu Chen ,  William Hunks ,  Philip S.H. Chen ,  Jeffrey F. Roeder ,  Thomas H. Baum

    IPC: H01L45/00

    CPC classification number: H01L45/1616 ,  C07C333/16 ,  C07C395/00 ,  C07F7/10 ,  C23C16/305

    Abstract: Precursors for use in depositing tellurium-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of Ge2Sb2Te5 chalcogenide thin films in the manufacture of nonvolatile Phase Change Memory (PCM), by deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD).

    Abstract translation: 用于在诸如晶片或其他微电子器件基底的基底上沉积含碲膜的前体，以及制备和使用这些前体的相关工艺以及这些前体的源封装。 前体可用于通过诸如化学气相沉积（CVD）和原子层沉积（ALD）的沉积技术在制造非易失性相变存储器（PCM）中沉积Ge2Sb2Te5硫族化物薄膜。

    SOLID PRECURSOR-BASED DELIVERY OF FLUID UTILIZING CONTROLLED SOLIDS MORPHOLOGY
    8.
    发明申请
    SOLID PRECURSOR-BASED DELIVERY OF FLUID UTILIZING CONTROLLED SOLIDS MORPHOLOGY 审中-公开
    使用固体前驱体的流体利用控制固体物质的流体

    公开(公告)号：US20140329025A1

    公开(公告)日：2014-11-06

    申请号：US14335897

    申请日：2014-07-19

    Applicant: Entegris, Inc.

    Inventor： John M. Cleary ,  Jose I. Arno ,  Bryan C. Hendrix ,  Donn Naito ,  Scott Battle ,  John N. Gregg ,  Michael J. Wodjenski ,  Chongying Xu

    IPC: C23C16/448 ,  C23C16/455 ,  C23C14/48

    CPC classification number: C23C16/4481 ,  C23C14/48 ,  C23C16/08 ,  C23C16/16 ,  C23C16/18 ,  C23C16/30 ,  C23C16/4402 ,  C23C16/45525 ,  C23C16/45544

    Abstract: Apparatus and method for volatilizing a source reagent susceptible to particle generation or presence of particles in the corresponding source reagent vapor, in which such particle generation or presence is suppressed by structural or processing features of the vapor generation system. Such apparatus and method are applicable to liquid and solid source reagents, particularly solid source reagents such as metal halides, e.g., hafnium chloride. The source reagent in one specific implementation is constituted by a porous monolithic bulk form of the source reagent material. The apparatus and method of the invention are usefully employed to provide source reagent vapor for applications such as atomic layer deposition (ALD) and ion implantation.

    Abstract translation: 挥发易于产生颗粒的源试剂的源试剂的装置和方法，其中通过蒸气发生系统的结构或加工特征抑制了这种颗粒产生或存在的相应源试剂蒸气。 这种装置和方法适用于液体和固体源试剂，特别是固体源试剂如金属卤化物，例如氯化铪。 一种具体实施方案中的源试剂由源试剂材料的多孔整体块形式构成。 本发明的装置和方法有用地用于提供用于例如原子层沉积（ALD）和离子注入的应用的源试剂蒸气。

    SOLID PRECURSOR-BASED DELIVERY OF FLUID UTILIZING CONTROLLED SOLIDS MORPHOLOGY
    10.
    发明申请
    SOLID PRECURSOR-BASED DELIVERY OF FLUID UTILIZING CONTROLLED SOLIDS MORPHOLOGY 审中-公开
    使用固体前驱体的流体利用控制固体物质的流体

    公开(公告)号：US20170037511A1

    公开(公告)日：2017-02-09

    申请号：US15334040

    申请日：2016-10-25

    Applicant: Entegris, Inc.

    Inventor： John M. Cleary ,  Jose I. Arno ,  Bryan C. Hendrix ,  Donn Naito ,  Scott Battle ,  John N. Gregg ,  Michael J. Wodjenski ,  Chongying Xu

    IPC: C23C16/448 ,  C23C16/455 ,  C23C16/30 ,  C23C16/16 ,  C23C16/18 ,  C23C14/48 ,  C23C16/08

    CPC classification number: C23C16/4481 ,  C23C14/48 ,  C23C16/08 ,  C23C16/16 ,  C23C16/18 ,  C23C16/30 ,  C23C16/4402 ,  C23C16/45525 ,  C23C16/45544

    Abstract: Apparatus and method for volatilizing a source reagent susceptible to particle generation or presence of particles in the corresponding source reagent vapor, in which such particle generation or presence is suppressed by structural or processing features of the vapor generation system. Such apparatus and method are applicable to liquid and solid source reagents, particularly solid source reagents such as metal halides, e.g., hafnium chloride. The source reagent in one specific implementation is constituted by a porous monolithic bulk form of the source reagent material. The apparatus and method of the invention are usefully employed to provide source reagent vapor for applications such as atomic layer deposition (ALD) and ion implantation.

    Abstract translation: 挥发易于产生颗粒的源试剂的源试剂的装置和方法，其中通过蒸气发生系统的结构或加工特征抑制了这种颗粒产生或存在的相应源试剂蒸气。 这种装置和方法适用于液体和固体源试剂，特别是固体源试剂如金属卤化物，例如氯化铪。 一种具体实施方案中的源试剂由源试剂材料的多孔整体块形式构成。 本发明的装置和方法有用地用于提供用于例如原子层沉积（ALD）和离子注入的应用的源试剂蒸气。

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