公开(公告)号：US20240360554A1

公开(公告)日：2024-10-31

申请号：US18648094

申请日：2024-04-26

Applicant: ASM IP Holding B.V.

Inventor： Davide Proserpio ,  Theodorus G.M. Oosterlaken ,  Herbert Terhorst ,  Didem Ernur

IPC: C23C16/448 ,  C23C16/08 ,  C23C16/458 ,  C23C16/54

CPC classification number: C23C16/4481 ,  C23C16/08 ,  C23C16/4587 ,  C23C16/54

Abstract: A solid source chemical vaporizer, an assembly of solid source chemical vaporizers, a substrate processing system comprising the solid source chemical vaporizer or the assembly and a method of forming a layer is disclosed. Embodiments of the presently described solid source chemical vaporizer comprise a vessel, a gas inlet, a gas outlet and a channel.

公开(公告)号：US12128395B2

公开(公告)日：2024-10-29

申请号：US17411640

申请日：2021-08-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongsik Yang ,  Hyukjae Kwon ,  Minseok Koo ,  Sukeun Kuk ,  Sehyeong Oh ,  Hyun Chul Lee ,  Sangmin Ji

IPC: C23C16/52 ,  B01J7/00 ,  C23C16/448 ,  H01L21/67

CPC classification number: B01J7/00 ,  C23C16/448 ,  C23C16/4481 ,  H01L21/67017 ,  H01L21/67253

Abstract: A process apparatus includes a gas supplier which supplies a reaction gas having a constant concentration, and a processor which performs a predetermined process by the reaction gas supplied from the gas supplier, where the gas supplier includes a reactor which accommodates a solid phase reactant, a heater which applies heat to the solid phase reactant to convert the solid phase reactant to a reaction gas in a gas phase, a gas pump which applies a predetermined pumping pressure to the reactor, and a gas outlet which discharges the reaction gas to the processor.

公开(公告)号：US12104252B2

公开(公告)日：2024-10-01

申请号：US17493278

申请日：2021-10-04

Applicant: CeeVeeTech, LLC

Inventor： Egbert G. Woelk

IPC: C23C16/448 ,  C23C16/52 ,  C23C16/455

CPC classification number: C23C16/52 ,  C23C16/4481 ,  C23C16/45506

Abstract: Techniques for controlling a solid precursor vapor source are provided. An example method of controlling a solid precursor vapor source includes providing a carrier gas to a sublimation vessel containing a solid precursor material, wherein the carrier gas is heated with a carrier gas temperature control device prior to entering the sublimation vessel, measuring a temperature of a vapor exiting the sublimation vessel, and controlling a temperature of the carrier gas with the carrier gas temperature control device based at least in part on the temperature of the vapor exiting the sublimation vessel.

公开(公告)号：US12077437B2

公开(公告)日：2024-09-03

申请号：US17445896

申请日：2021-08-25

Applicant: Energy and Environmental Research Center Foundation

Inventor： Alexander Azenkeng ,  James Tibbetts ,  Jason Laumb

IPC: B32B9/00 ,  C01B32/182 ,  C01B32/186 ,  C23C16/26 ,  C23C16/448

CPC classification number: C01B32/186 ,  C01B32/182 ,  C23C16/26 ,  C23C16/4481 ,  C01P2002/82 ,  C01P2002/85 ,  C01P2004/02 ,  C01P2004/03

Abstract: Methods and apparatuses for forming a graphene film, and graphene films produced thereby. A method of forming a graphene film includes depositing a carbon source onto a substrate within a deposition environment including a vacuum to form the graphene film on the substrate. The carbon source includes coal, a coal component, or a combination thereof.

公开(公告)号：US12054825B2

公开(公告)日：2024-08-06

申请号：US17355119

申请日：2021-06-22

Applicant: Applied Materials, Inc.

Inventor： Carl White ,  David Marquardt ,  Mohith Verghese

IPC: C23C16/448

CPC classification number: C23C16/4481 ,  C23C16/4482

Abstract: Ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules include a container with an inlet port an outlet port, a manifold having a serpentine base creating a tortuous flow path and a filter media assembly in a bottom-fed configuration. The torturous flow path is defined by a plurality of elongate walls and a plurality of openings of the serpentine base ampoule, through which a carrier gas flows in contact with the precursor.

公开(公告)号：US20240117194A1

公开(公告)日：2024-04-11

申请号：US18542286

申请日：2023-12-15

Applicant: VIAVI SOLUTIONS INC.

Inventor： Alberto ARGOITIA ,  Larry MEREDITH ,  Carole THORAVAL ,  Vladimir RAKSHA

IPC: C09C1/62 ,  C09B67/00 ,  C09B67/08 ,  C09C1/00 ,  C09C1/64 ,  C09C1/66 ,  C09C3/10 ,  C09D11/037 ,  C23C16/442 ,  C23C16/448

CPC classification number: C09C1/627 ,  C09B67/0008 ,  C09B67/0098 ,  C09C1/00 ,  C09C1/0021 ,  C09C1/0051 ,  C09C1/64 ,  C09C1/66 ,  C09C3/10 ,  C09D11/037 ,  C23C16/442 ,  C23C16/4481 ,  C01P2004/20 ,  C01P2004/86 ,  C09C2200/1058 ,  C09C2220/20

Abstract: A particle including a core particle; and a vapor deposited colorant including an organic colored material that encapsulates the core particle. The particle can be a special effect pigment or a thin film interference pigment. Methods of making the particle are also disclosed.

公开(公告)号：US20230175127A1

公开(公告)日：2023-06-08

申请号：US18074629

申请日：2022-12-05

Applicant: ASM IP Holding B.V.

Inventor： Todd Dunn ,  Paul Ma

IPC: C23C16/448 ,  C23C16/455 ,  C23C16/52

CPC classification number: C23C16/4481 ,  C23C16/45561 ,  C23C16/52

Abstract: Herein disclosed are systems and methods related to remote delivery systems using solid source chemical bulk fill vessels. The delivery system can include a vapor deposition reactor, two or more bulk fill vessels remote from the vapor deposition reactor, an interconnect line, a line heater, and a gas panel comprising one or more valves. Each bulk fill vessel is configured to hold solid source chemical reactant therein. The bulk fill vessels can each include fluid outlets. The interconnect line can fluidly connect the vapor deposition reactor with each bulk fill vessel. The line heater can heat at least a portion of the interconnect line to at least a minimum line temperature. The one or more valves of the gas panel can switch a flow of vaporized chemical reactant through the interconnect line from being from one fluid outlet to being from another fluid outlet.

公开(公告)号：US11670688B2

公开(公告)日：2023-06-06

申请号：US16764615

申请日：2018-11-15

Applicant: FLOSFIA INC.

Inventor： Tokiyoshi Matsuda ,  Masahiro Sugimoto ,  Takashi Shinohe

IPC: H01L29/24 ,  C23C16/448 ,  H01L21/02 ,  H01L21/443 ,  H01L21/465 ,  H01L29/66 ,  H01L29/739 ,  H01L29/78 ,  H02M3/335

CPC classification number: H01L29/24 ,  C23C16/4481 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/443 ,  H01L21/465 ,  H01L29/66969 ,  H01L29/7397 ,  H01L29/7806 ,  H01L29/7813 ,  H02M3/33576

Abstract: The disclosure provides a semiconductor apparatus capable of keeping a semiconductor characteristics and realizing excellent semiconductor properties even when using an n type semiconductor (gallium oxide, for example) having a low loss at a high voltage and having much higher dielectric breakdown electric field strength than SiC. A semiconductor apparatus includes a gate electrode and a channel layer formed of a channel directly or through other layers on a side wall of the gate electrode, and wherein a portion of or whole the channel layer may be a p type oxide semiconductor (iridium oxide, for example).

公开(公告)号：US20180355478A1

公开(公告)日：2018-12-13

申请号：US15778274

申请日：2016-11-24

Applicant: Umicore AG & Co. KG

Inventor： Jörg KOCH ,  Oliver BRIEL

IPC: C23C16/40 ,  C30B25/02 ,  C23C16/448 ,  C07F5/00

CPC classification number: C23C16/407 ,  C07F5/00 ,  C23C16/301 ,  C23C16/4481 ,  C30B25/02 ,  C30B29/02 ,  C30B29/16 ,  C30B35/007

Abstract: The invention relates to methods for producing an indium-containing layer by metal-organic vapor phase deposition, wherein the indium-containing layer is generated on a substrate in a reaction chamber, wherein the indium is delivered to the process in the form of an indium-containing precursor compound with the formula InR3, wherein the radicals R, independently of one another, are selected from alkyl radicals with 1 to 6 C atoms, characterized in that the delivery of the indium-containing precursor compound takes place in a solution that contains a solvent and the indium-containing precursor compound dissolved therein, wherein the solvent has at least one hydrocarbon with 1 to 8 carbon atoms.The invention also relates to a solution consisting of a compound of formula InR3, wherein R are selected independently of one another from alkyl radicals with 1 to 6 C atoms, and at least one hydrocarbon having 1 to 8 carbon atoms, uses of the solution for producing an indium-containing layer by metal-organic vapor deposition, and devices for executing the method.

公开(公告)号：US20180233296A1

公开(公告)日：2018-08-16

申请号：US15944694

申请日：2018-04-03

Applicant: Hangzhou Microquanta Semiconductor Co., Ltd.

Inventor： Buyi Yan ,  Jizhong Yao

IPC: H01G9/20 ,  C23C16/30 ,  C23C16/455 ,  C23C16/52 ,  C23C16/56 ,  H01L51/00

CPC classification number: H01G9/2059 ,  C23C16/30 ,  C23C16/4481 ,  C23C16/455 ,  C23C16/45502 ,  C23C16/45591 ,  C23C16/52 ,  C23C16/56 ,  C30B25/14 ,  C30B29/12 ,  H01G9/2031 ,  H01G9/204 ,  H01L51/0002 ,  H01L51/4246

Abstract: The present disclosure relates to perovskite thin film low-pressure chemical deposition equipment and a usage method thereof, and application of the usage method. The equipment comprises a main chamber, wherein two precursor heating plates and a substrate holddown groove are respectively arranged in the main chamber, the precursor heating plates are respectively provided with precursor containers, a plurality of groups of substrates on which a thin film is to be deposited are arranged on the substrate holddown groove, each group is provided with two substrates which are tightly attached back to back, and the surface of each of the two substrates on which a thin film is to be deposited faces towards one end of the main chamber; the left and right ends of the main chamber respectively communicate with carrier gas pipelines provided with carrier gas inlet mass flow control valves, the main chamber also communicates with a vacuum providing unit, and the main chamber is also provided with a main chamber heater for heating the substrates; and the carrier gas pipelines on the two ends respectively communicate with solvent evaporators. By adopting simultaneous introduction of the gas from the two ends of the main chamber and the substrate back-to-back configuration mode, the rate of preparing the perovskite thin film by the method is doubled as compared with the existing methods.