公开(公告)号：US11670688B2

公开(公告)日：2023-06-06

申请号：US16764615

申请日：2018-11-15

Applicant: FLOSFIA INC.

Inventor： Tokiyoshi Matsuda ,  Masahiro Sugimoto ,  Takashi Shinohe

IPC: H01L29/24 ,  C23C16/448 ,  H01L21/02 ,  H01L21/443 ,  H01L21/465 ,  H01L29/66 ,  H01L29/739 ,  H01L29/78 ,  H02M3/335

CPC classification number: H01L29/24 ,  C23C16/4481 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/443 ,  H01L21/465 ,  H01L29/66969 ,  H01L29/7397 ,  H01L29/7806 ,  H01L29/7813 ,  H02M3/33576

Abstract: The disclosure provides a semiconductor apparatus capable of keeping a semiconductor characteristics and realizing excellent semiconductor properties even when using an n type semiconductor (gallium oxide, for example) having a low loss at a high voltage and having much higher dielectric breakdown electric field strength than SiC. A semiconductor apparatus includes a gate electrode and a channel layer formed of a channel directly or through other layers on a side wall of the gate electrode, and wherein a portion of or whole the channel layer may be a p type oxide semiconductor (iridium oxide, for example).

公开(公告)号：US11152472B2

公开(公告)日：2021-10-19

申请号：US16724494

申请日：2019-12-23

Applicant: FLOSFIA INC. ,  DENSO CORPORATION

Inventor： Isao Takahashi ,  Tatsuya Toriyama ,  Masahiro Sugimoto ,  Takashi Shinohe ,  Hideyuki Uehigashi ,  Junji Ohara ,  Fusao Hirose ,  Hideo Matsuki

IPC: H01L29/24 ,  H01L21/02 ,  C23C16/448 ,  H01L23/367 ,  H01L29/04 ,  H01L29/739 ,  H01L29/778 ,  H01L29/78 ,  H01L29/808 ,  H01L29/872 ,  H01L33/26 ,  H02M3/335

Abstract: A crystalline oxide semiconductor with excellent crystalline qualities that is useful for semiconductors requiring heat dissipation is provided. A crystalline oxide semiconductor including a first crystal axis, a second crystal axis, a first side, and a second side that is shorter than the first side, a linear thermal expansion coefficient of the first crystal axis is smaller than a linear thermal expansion coefficient of the second crystal axis, a direction of the first side is parallel and/or substantially parallel to a direction of the first crystal axis, and a direction of the second side is parallel and/or substantially parallel to a direction of the second crystal axis.

公开(公告)号：US10944015B2

公开(公告)日：2021-03-09

申请号：US16110136

申请日：2018-08-23

Applicant: FLOSFIA INC.

Inventor： Masahiro Sugimoto ,  Isao Takahashi ,  Takashi Shinohe ,  Toshimi Hitora

IPC: H01L29/868 ,  H01L29/24 ,  H01L29/06 ,  H01L29/872 ,  H01L21/02 ,  H01L29/04 ,  H01L29/66

Abstract: In a first aspect of a present inventive subject matter, a semiconductor device includes an n-type semiconductor layer including a first semiconductor as a major component, an i-type semiconductor layer including a second semiconductor as a major component and a p-type semiconductor layer including a third semiconductor as a major component. The second semiconductor contains a corundum-structured oxide semiconductor.

公开(公告)号：US12159940B2

公开(公告)日：2024-12-03

申请号：US17575838

申请日：2022-01-14

Applicant: FLOSFIA INC.

Inventor： Mitsuru Okigawa ,  Yasushi Higuchi ,  Yusuke Matsubara ,  Osamu Imafuji ,  Takashi Shinohe

IPC: H01L29/872 ,  H01L21/02 ,  H01L29/04 ,  H01L29/24 ,  H01L29/47 ,  H01L29/78 ,  H01L29/786

Abstract: Provided are a multilayer structure in which crystal defects due to stress concentration in a semiconductor layer caused by an insulator film are prevented and a semiconductor device using the multilayer structure, the multilayer structure and the semiconductor device that are particularly useful for power devices. A multilayer structure in which an insulator film is arranged on a part of a semiconductor film, wherein the semiconductor film has a corundum structure and contains a crystalline oxide semiconductor containing one or two or more metals selected from groups 9 and 13 of the periodic table, and wherein the insulator film has a taper angle of 20° or less.

公开(公告)号：US11594601B2

公开(公告)日：2023-02-28

申请号：US16764622

申请日：2018-11-15

Applicant: FLOSFIA INC.

Inventor： Tokiyoshi Matsuda ,  Masahiro Sugimoto ,  Takashi Shinohe

IPC: H01L29/24 ,  C23C16/40 ,  H01L21/02 ,  H01L21/443 ,  H01L21/465 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H02M3/335

Abstract: A semiconductor apparatus capable of reducing the leakage current in the reverse direction, and keeping characteristics thereof, even when using n type semiconductor (gallium oxide, for example) or the like having a low-loss at a high voltage and having much higher dielectric breakdown electric field strength than SiC is provided. A semiconductor apparatus includes a crystalline oxide semiconductor having a corundum structure as a main component, and an electric field shield layer and a gate electrode that are respectively laminated directly or through other layers on the n type semiconductor layer, wherein the electric field shield layer includes a p type oxide semiconductor, and is embedded in the n type semiconductor layer deeper than the gate electrode.

公开(公告)号：US11495695B2

公开(公告)日：2022-11-08

申请号：US17259630

申请日：2019-07-10

Applicant: FLOSFIA INC.

Inventor： Masahiro Sugimoto ,  Isao Takahashi ,  Takashi Shinohe ,  Koji Amazutsumi

IPC: H01L29/24 ,  H01L29/872 ,  C23C16/40 ,  H01L21/02 ,  H01L29/66 ,  H02M3/335

Abstract: A semiconductor device with enhanced semiconductor characteristics that is useful for power devices. A semiconductor device, including: an n-type semiconductor layer; an electrode; two or more p-type semiconductors provided between the n-type semiconductor layer and the electrode, the n-type semiconductor layer containing a corundum-structured crystallin oxide semiconductor as a major component, a number of the two or more p-type semiconductor that is equal to or more than three, and the two or more p-type semiconductors that are embedded in the n-type semiconductor layer.

公开(公告)号：US10770553B2

公开(公告)日：2020-09-08

申请号：US16143757

申请日：2018-09-27

Applicant: FLOSFIA INC.

Inventor： Tokiyoshi Matsuda ,  Takashi Shinohe ,  Shingo Yagyu ,  Takuto Igawa

IPC: H01L29/267 ,  H01L29/04 ,  H01L21/02 ,  H01L29/24 ,  H01L29/778 ,  H01L29/737 ,  H01L29/22

Abstract: In a first aspect of a present inventive subject matter, a layered structure includes a first semiconductor layer containing as a major component an ε-phase oxide semiconductor crystal; and a second semiconductor layer positioned on the first semiconductor layer and containing as a major component an oxide semiconductor crystal with a tetragonal crystal structure.

公开(公告)号：US10460934B2

公开(公告)日：2019-10-29

申请号：US16106753

申请日：2018-08-21

Applicant: FLOSFIA INC. ,  NATIONAL INSTITUTE FOR MATERIALS SCIENCE ,  KYOTO UNIVERSITY ,  SAGA UNIVERSITY

Inventor： Yuichi Oshima ,  Shizuo Fujita ,  Kentaro Kaneko ,  Makoto Kasu ,  Katsuaki Kawara ,  Takashi Shinohe ,  Tokiyoshi Matsuda ,  Toshimi Hitora

IPC: H01L21/02 ,  H01L29/24 ,  H01L29/04 ,  H01L29/872

Abstract: According to an aspect of a present inventive subject matter, a crystalline film includes a crystalline metal oxide as a major component, the crystalline film includes a corundum structure, a surface area that is 9 μm2 or more, and a dislocation density that is less than 5×106 cm−2.

公开(公告)号：US20250072057A1

公开(公告)日：2025-02-27

申请号：US18947324

申请日：2024-11-14

Applicant: FLOSFIA INC.

Inventor： Masahiro Sugimoto ,  Isao Takahashi ,  Takashi Shinohe

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/10 ,  H01L29/24

Abstract: A semiconductor device including at least one inversion channel region includes an oxide semiconductor film containing a crystal that has a corundum structure at the inversion channel region.

公开(公告)号：US12176436B2

公开(公告)日：2024-12-24

申请号：US17258852

申请日：2019-07-11

Applicant: FLOSFIA INC.

Inventor： Masahiro Sugimoto ,  Isao Takahashi ,  Takashi Shinohe

IPC: H01L29/04 ,  H01L29/10 ,  H01L29/24 ,  H01L29/786

Abstract: A semiconductor device including at least one inversion channel region includes an oxide semiconductor film containing a crystal that has a corundum structure at the inversion channel region.