公开(公告)号：US11152472B2

公开(公告)日：2021-10-19

申请号：US16724494

申请日：2019-12-23

Applicant: FLOSFIA INC. ,  DENSO CORPORATION

Inventor： Isao Takahashi ,  Tatsuya Toriyama ,  Masahiro Sugimoto ,  Takashi Shinohe ,  Hideyuki Uehigashi ,  Junji Ohara ,  Fusao Hirose ,  Hideo Matsuki

IPC: H01L29/24 ,  H01L21/02 ,  C23C16/448 ,  H01L23/367 ,  H01L29/04 ,  H01L29/739 ,  H01L29/778 ,  H01L29/78 ,  H01L29/808 ,  H01L29/872 ,  H01L33/26 ,  H02M3/335

Abstract: A crystalline oxide semiconductor with excellent crystalline qualities that is useful for semiconductors requiring heat dissipation is provided. A crystalline oxide semiconductor including a first crystal axis, a second crystal axis, a first side, and a second side that is shorter than the first side, a linear thermal expansion coefficient of the first crystal axis is smaller than a linear thermal expansion coefficient of the second crystal axis, a direction of the first side is parallel and/or substantially parallel to a direction of the first crystal axis, and a direction of the second side is parallel and/or substantially parallel to a direction of the second crystal axis.

公开(公告)号：US11495695B2

公开(公告)日：2022-11-08

申请号：US17259630

申请日：2019-07-10

Applicant: FLOSFIA INC.

Inventor： Masahiro Sugimoto ,  Isao Takahashi ,  Takashi Shinohe ,  Koji Amazutsumi

IPC: H01L29/24 ,  H01L29/872 ,  C23C16/40 ,  H01L21/02 ,  H01L29/66 ,  H02M3/335

Abstract: A semiconductor device with enhanced semiconductor characteristics that is useful for power devices. A semiconductor device, including: an n-type semiconductor layer; an electrode; two or more p-type semiconductors provided between the n-type semiconductor layer and the electrode, the n-type semiconductor layer containing a corundum-structured crystallin oxide semiconductor as a major component, a number of the two or more p-type semiconductor that is equal to or more than three, and the two or more p-type semiconductors that are embedded in the n-type semiconductor layer.

公开(公告)号：US11088242B2

公开(公告)日：2021-08-10

申请号：US16981550

申请日：2020-03-30

Applicant: FLOSFIA INC.

Inventor： Tokiyoshi Matsuda ,  Takahiro Sasaki ,  Toshimi Hitora ,  Isao Takahashi

IPC: C30B29/22 ,  H01L29/04 ,  H01L29/24 ,  H01L21/02 ,  H01C7/04 ,  H01L29/872 ,  H01L29/78 ,  H01C7/02

Abstract: As an aspect of an embodiment, a crystal contains a metal oxide containing Ga and Mn and having a corundum structure.

公开(公告)号：US20250072057A1

公开(公告)日：2025-02-27

申请号：US18947324

申请日：2024-11-14

Applicant: FLOSFIA INC.

Inventor： Masahiro Sugimoto ,  Isao Takahashi ,  Takashi Shinohe

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/10 ,  H01L29/24

Abstract: A semiconductor device including at least one inversion channel region includes an oxide semiconductor film containing a crystal that has a corundum structure at the inversion channel region.

公开(公告)号：US12176436B2

公开(公告)日：2024-12-24

申请号：US17258852

申请日：2019-07-11

Applicant: FLOSFIA INC.

Inventor： Masahiro Sugimoto ,  Isao Takahashi ,  Takashi Shinohe

IPC: H01L29/04 ,  H01L29/10 ,  H01L29/24 ,  H01L29/786

Abstract: A semiconductor device including at least one inversion channel region includes an oxide semiconductor film containing a crystal that has a corundum structure at the inversion channel region.

公开(公告)号：US11967618B2

公开(公告)日：2024-04-23

申请号：US17832984

申请日：2022-06-06

Applicant: FLOSFIA INC.

Inventor： Isao Takahashi ,  Takashi Shinohe ,  Rie Tokuda ,  Masaya Oda ,  Toshimi Hitora

IPC: H01L29/22 ,  C23C16/40 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02 ,  H01L29/04 ,  H01L29/12 ,  H01L29/227 ,  H01L29/24 ,  H01L29/739 ,  H01L29/778 ,  H01L29/78 ,  H01L29/808 ,  H01L29/812 ,  H01L29/872

CPC classification number: H01L29/227 ,  C23C16/40 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02433 ,  H01L29/045 ,  H01L29/12 ,  H01L29/24 ,  H01L29/739 ,  H01L29/778 ,  H01L29/78 ,  H01L29/808 ,  H01L29/812 ,  H01L29/872

Abstract: A crystalline oxide semiconductor film with an enhanced electrical property is provided. By use of a mist CVD apparatus, a crystalline oxide semiconductor film with a corundum structure and a principal plane that is an a-plane or an m-plane was obtained on a crystalline substrate by atomizing a raw-material solution containing a dopant that is an n-type dopant to obtain atomized droplets, carrying the atomized droplets by carrier gas onto the crystalline substrate that is an a-plane corundum-structured crystalline substrate or an m-plane corundum-structured crystalline substrate placed in a film-formation chamber, and the atomized droplets were thermally reacted to form the crystalline oxide semiconductor film on the crystalline substrate.

公开(公告)号：US12148804B2

公开(公告)日：2024-11-19

申请号：US17259622

申请日：2019-07-10

Applicant: FLOSFIA INC.

Inventor： Masahiro Sugimoto ,  Isao Takahashi ,  Takashi Shinohe ,  Koji Amazutsumi

IPC: H01L29/24 ,  H01L29/417 ,  H01L29/872

Abstract: A semiconductor device with enhanced semiconductor characteristics that is useful for power devices. A semiconductor device, including: an n-type semiconductor layer; one or more p-type semiconductors; an electrode, the one or more p-type semiconductors that are provided between the n-type semiconductor layer and the electrode, and at least a part of the one or more p-type semiconductors is protruded in the electrode.

公开(公告)号：US11488821B2

公开(公告)日：2022-11-01

申请号：US17256414

申请日：2019-06-21

Applicant: FLOSFIA INC.

Inventor： Isao Takahashi ,  Takashi Shinohe

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/52 ,  C30B25/16 ,  C30B25/18 ,  C30B29/16 ,  H01L29/24

Abstract: The disclosure provides a film forming method that enables to obtain an epitaxial film with reduced defects such as dislocations due to a reduced facet growth industrially advantageously, even if the epitaxial film has a corundum structure. When forming an epitaxial film on a crystal-growth surface of a corundum-structured crystal substrate directly or via another layer, using the crystal substrate having an uneven portion on the crystal-growth surface of the crystal substrate, generating and floating atomized droplets by atomizing a raw material solution including a metal; carrying the floated atomized droplets onto a surface of the crystal substrate by using a carrier gas; and causing a thermal reaction of the atomized droplets in a condition of a supply rate limiting state.

公开(公告)号：US11450774B2

公开(公告)日：2022-09-20

申请号：US16628341

申请日：2018-07-06

Applicant: FLOSFIA INC.

Inventor： Masahiro Sugimoto ,  Isao Takahashi ,  Hitoshi Kambara ,  Takashi Shinohe ,  Toshimi Hitora

IPC: H01L29/872 ,  H01L29/06 ,  H01L29/47

Abstract: A semiconductor device with an enhanced semiconductor characteristics that is useful for power devices. A semiconductor device including: a semiconductor region; a barrier electrode arranged on the semiconductor region; and two or more adjustment regions of barrier height that are on a surface of the semiconductor region and arranged between the semiconductor region and the barrier electrode, the adjustment regions are configured such that barrier height at an interface between the adjustment regions and the barrier electrode is higher than barrier height at an interface between the semiconductor region and the barrier electrode.

公开(公告)号：US11233129B2

公开(公告)日：2022-01-25

申请号：US16764613

申请日：2018-11-15

Applicant: FLOSFIA INC.

Inventor： Tokiyoshi Matsuda ,  Isao Takahashi ,  Takashi Shinohe

IPC: H01L29/24 ,  H01L29/47 ,  H01L29/78

Abstract: The disclosure provides a semiconductor apparatus capable of keeping a semiconductor characteristics and realizing excellent semiconductor properties even when using an n type semiconductor (gallium oxide, for example) having a low loss at a high voltage and having much higher dielectric breakdown electric field strength than SiC. A semiconductor apparatus including at least an n type semiconductor layer and a p+ type semiconductor layer, wherein the n type semiconductor layer includes a crystalline oxide semiconductor (gallium oxide, for example) containing a metal of Group 13 of the periodic table as a main component, and the p+ type semiconductor layer includes a crystalline oxide semiconductor (iridium oxide, for example) containing a metal of Group 9 of the periodic table as a main component.