公开(公告)号：US11152472B2

公开(公告)日：2021-10-19

申请号：US16724494

申请日：2019-12-23

Applicant: FLOSFIA INC. ,  DENSO CORPORATION

Inventor： Isao Takahashi ,  Tatsuya Toriyama ,  Masahiro Sugimoto ,  Takashi Shinohe ,  Hideyuki Uehigashi ,  Junji Ohara ,  Fusao Hirose ,  Hideo Matsuki

IPC: H01L29/24 ,  H01L21/02 ,  C23C16/448 ,  H01L23/367 ,  H01L29/04 ,  H01L29/739 ,  H01L29/778 ,  H01L29/78 ,  H01L29/808 ,  H01L29/872 ,  H01L33/26 ,  H02M3/335

Abstract: A crystalline oxide semiconductor with excellent crystalline qualities that is useful for semiconductors requiring heat dissipation is provided. A crystalline oxide semiconductor including a first crystal axis, a second crystal axis, a first side, and a second side that is shorter than the first side, a linear thermal expansion coefficient of the first crystal axis is smaller than a linear thermal expansion coefficient of the second crystal axis, a direction of the first side is parallel and/or substantially parallel to a direction of the first crystal axis, and a direction of the second side is parallel and/or substantially parallel to a direction of the second crystal axis.

公开(公告)号：US11056584B2

公开(公告)日：2021-07-06

申请号：US16693598

申请日：2019-11-25

Applicant: DENSO CORPORATION

Inventor： Kensuke Hata ,  Shinichi Hoshi ,  Hideo Matsuki ,  Youngshin Eum ,  Shigeki Takahashi

IPC: H01L29/778 ,  H01L29/417 ,  H01L29/423 ,  H01L29/80

Abstract: In a semiconductor device having an active region and an inactive region, the active region includes a channel forming layer with a heterojunction structure having first and second semiconductor layers, a gate structure portion having a MOS gate electrode, a source electrode and a drain electrode disposed on the second semiconductor layer with the gate structure portion interposed therebetween, a third semiconductor layer disposed at a position away from the drain electrode between the gate structure portion and the drain electrode and not doped with an impurity, a p-type fourth semiconductor layer disposed on the third semiconductor layer, and a junction gate electrode brought into contact with the fourth semiconductor layer. The junction gate electrode is electrically connected to the source electrode to have a same potential as a potential of the source electrode, and is disposed only in the active region.